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Ion Instabilities in MOS Structures

12th International Reliability Physics Symposium, 1974
Sodium and a few other alkali metal impurities, introduced during processing into the SiO2 gate insulator of MOS devices, are easily ionized and are sufficiently mobile even at low temperatures to cause a considerable drift of the electrical characteristics of MOS devices.
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Physical limitations of MOS structures

Microelectronics Reliability, 1969
The physical model of the MOS structure is re-assessed with particular reference to its usefulness in the understanding of the behaviour of MOSTs near the threshold or transition region and under high surface field and channel field conditions of operation.
openaire   +2 more sources

A Data Structure for MOS Circuits

20th Design Automation Conference Proceedings, 1983
Chi-Yuan Lo, Hao N. Nham, Ajoy K. Bose
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Specific memory effect in MOS structures

Physica Status Solidi (a), 1979
V. G. Litovchenko   +4 more
openaire   +1 more source

MOS Structures

1993
Robert W. Dutton, Zhiping Yu
openaire   +1 more source

Enhanced adsorption sites in monolayer MoS2 pyramid structures for highly sensitive and fast hydrogen sensor

International Journal of Hydrogen Energy, 2020
Abhay V Agrawal   +2 more
exaly  

Structure of Mo at high spins

Nuclear Physics A, 2000
J.M. Chatterjee   +7 more
openaire   +1 more source

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