Results 271 to 280 of about 24,512 (305)
Some of the next articles are maybe not open access.
Ion Instabilities in MOS Structures
12th International Reliability Physics Symposium, 1974Sodium and a few other alkali metal impurities, introduced during processing into the SiO2 gate insulator of MOS devices, are easily ionized and are sufficiently mobile even at low temperatures to cause a considerable drift of the electrical characteristics of MOS devices.
openaire +1 more source
Physical limitations of MOS structures
Microelectronics Reliability, 1969The physical model of the MOS structure is re-assessed with particular reference to its usefulness in the understanding of the behaviour of MOSTs near the threshold or transition region and under high surface field and channel field conditions of operation.
openaire +2 more sources
A Data Structure for MOS Circuits
20th Design Automation Conference Proceedings, 1983Chi-Yuan Lo, Hao N. Nham, Ajoy K. Bose
openaire +2 more sources
Specific memory effect in MOS structures
Physica Status Solidi (a), 1979V. G. Litovchenko +4 more
openaire +1 more source

