Results 261 to 270 of about 24,512 (305)

On the Role of Chlorine in the Passivation of MOS Structures

Physica Status Solidi (a), 1979
Chlorine is introduced into SiO2 films by means of oxidation of silicon slices in presence of vapour HCl, and by ion implantation method. Samples are contaminated with sodium and then BT-stressed. Concentration profiles of sodium were plotted vs. depth in oxide films by means of NAA method.
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Instantaneous characteristics of MOS structures

Journal of Physics E: Scientific Instruments, 1977
A simple, rapid experimental method is proposed for obtaining the parameters of each MOS device from the profile of the derived curve dCn/dVg of the capacitance-voltage characteristic, which is closely correlated to the level of disorder existing in the I-S interfacial region.
B Balland, J J Marchand, P Pinard
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Complementary MOS-bipolar structure

IEEE Transactions on Electron Devices, 1968
Medium and large scale integrated arrays employing complementary MOS transistors, are capable of driving low capacitive loads only. An n-p-n bipolar transistor with an isolated collector is needed when an integrated circuit is required to drive large capacitive loads without deterioration in the maximum operating frequency.
H.C. Lin, R.R. Iyer, C.T. Ho
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A MOS structure temperature characterization

Materials Science and Engineering: B, 1997
Abstract As is known, during the realization of semiconductor made components or devices, defects appear which lead to electronic trapped states. Their energies are all located in the forbidden band called the band gap. These states are called surface states and hinder the good functioning of such components or devices.
A. Bouzidi, A. Boudissa, Z. Benamara, M. Anani, H. Sehil, B. Akkal   +5 more
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Tunneling in thin MOS structures

Journal of Vacuum Science and Technology, 1974
Recent results on tunneling in thin MOS structures are described. Thermally grown SiO2 films in the thickness range of 22–40 Å have been shown to be effectively uniform on an atomic scale and exhibit an extremely abrupt oxide-silicon interface. Resonant reflections are observed at this interface for Fowler-Nordheim tunneling and are shown to agree with
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The Effects of Hydrogen on MOS Structures

1984
The threshold voltage of Pd/SiO2/Si devices alters markedly on exposure to hydrogen, making them useful gas detectors. Initially we have observed response ~ 5mV for 100 ppm partial pressure of H2 followed by a “forming” process during which the response rises to 500 mV for the same pressure.
M. Evans, J. M. Noras, P. R. C. Stevens, C. B. Thomas   +3 more
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Surface reactions on MOS structures

Journal of Applied Physics, 1974
The morphology of surface reactions for Au/SiO2/Si structures has been studied as a function of environment. It was found that the reaction between thin gold film dots and thermally oxidized Si was strongly influenced by the partial pressure of oxygen.
E. I. Alessandrini, D. R. Campbell, K. N. Tu   +2 more
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Hydrogen sensitive MOS structures

1975 International Electron Devices Meeting, 1975
It is shown that hydrogen in the ambient atmosphere changes the flatband voltage of palladium gate MOS-structures. The physical mechanisms behind this phenomenon are discussed. Experimental results on the detection of hydrogen in air, argon and nitrogen are given.
I. Lundstrom, M.S. Shivaraman, C. Svensson   +2 more
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The Structure of Mo/Ta Superlattices

1988
We grew superlattices of Mo and Ta on sapphire substrates using magnetically enhanced de triode sputtering, where a rotating substrate table alternately passes over the targets to create multilayers. Microprocessor control of the sputtering process allowed us to keep layer thicknesses constant to ±0.3%.
J. L. Makous, C. M. Falco
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MOS Transistor Structure and Operation

1993
In this chapter we will give an overview of the MOS transistor as used in VLSI technology, and its behavior under operating biases will be explained qualitatively. First we will describe the basic MOSFET structure and then qualitatively discuss its current-voltage characteristics. During the last two decades, device lengths have been reduced from 20 μm
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