Results 51 to 60 of about 156,764 (197)
A location-based approach to the classification of mesoscale oceanic structures in SeaWiFS and Aqua-MODIS images of Northwest Africa [PDF]
, 2015 This study presents a different approach to the classification of Mesoscale Oceanic Structures (MOS) present in the Northwest African area, based on their location.
Almendros-Jiménez, Jesús M. +3 more
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Defects in irradiated MOS structures
, 2015 This thesis is not available on this repository until the author agrees to make it public. If you are the author of this thesis and would like to make your work openly available, please contact us: thesis@repository.cam.ac.uk.
openaire +1 more source
Electronic structure of the Mo(001) surface [PDF]
Physical Review B, 1993 We report computed results of the surface band structures of a molybdenum (001) surface by employing a self-consistent semirelativistic version of the full potential linearized augmented-plane-wave method. Computation was carried out for a seven-layer slab of bulk-truncated (1\ifmmode\times\else\texttimes\fi{}1) Mo(001) surface, ignoring the spin-orbit
HONG S. C, CHUNG J. W
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Nanomaterials, 2021 1T-phase molybdenum disulfide is supposed to be one of the non-precious metal-based electrocatalysts for the hydrogen evolution reaction with the highest potential.
Kunjie Wang +6 more
doaj +1 more source
, 1999 We studied the weak field Hall voltage in 2D electron layers in Si-MOS structures with different mobilities, through the metal-insulator transition.
A. B. Fowler +16 more
core +1 more source
Surface Passivation of Germanium Using NH3 Ambient in RTP for High Mobility MOS Structure [PDF]
Журнал нано- та електронної фізики, 2013 Ge CMOS is very striking for the post Si-CMOS technology. However, we have to attempt a number of challenges with regard to materials and their interface control.
Anil G. Khairnar +2 more
doaj
New Journal of Physics, 2023 Modulating magnetic properties in monolayer MoS _2 is important for the applications in spintronics and magnetism devices. In this work, we have studied the electronic, magnetic and optical properties of co-doped monolayer MoS _2 with As–Ge (Si) doping ...
Sifan Zhang +8 more
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Newly observed first-order resonant Raman modes in few-layer MoS$_2$
, 2015 We report two new first-order Raman modes in the spectra of few-layer MoS$_2$ at 286~cm$^{-1}$ and 471~cm$^{-1}$ for excitation energies above 2.4~eV.
Gillen, Roland +3 more
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Unconventional superconducting gap structure protected by space group symmetry
, 2018 Recent superconducting gap classifications based on space group symmetry have revealed nontrivial gap structures that were not shown by point group symmetry.
Sumita, Shuntaro, Yanase, Youichi
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Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures. [PDF]
, 2015 Effective passivation of interface defects in high-k metal oxide/Ge gate stacks is a longstanding goal of research on germanium metal-oxide-semiconductor devices. In this paper, we use photoelectron spectroscopy to probe the formation of a GeO2 interface
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