Results 161 to 170 of about 6,198 (180)

A critical evaluation based on Lattice Boltzmann method of nanoscale thermal behavior inside MOSFET and SOI-MOSFET

Microelectronics Journal, 2021
Müslüm Arici, Abdelmalek Atia, Oussama Zobiri   +2 more
exaly  

Comprehensive study of a 4H–SiC MES–MOSFET

Physica E: Low-Dimensional Systems and Nanostructures, 2015
Hamid Amini Moghadam
exaly  

Theory of an improved vertical power MOSFET using high-k insulator

Superlattices and Microstructures, 2015
Mingmin Huang
exaly  

Variation Study of the Planar Ground-Plane Bulk MOSFET, SOI FinFET, and Trigate Bulk MOSFET Designs

IEEE Transactions on Electron Devices, 2011
Changhwan Shin, Tsu-Jae Liu, Nattapol Damrongplasit   +2 more
exaly  

Characterization and Experimental Assessment of the Effects of Parasitic Elements on the MOSFET Switching Performance

IEEE Transactions on Power Electronics, 2013
Henry Chung
exaly  

High performance multi-channel MOSFET on InGaAs for RF amplifiers

Superlattices and Microstructures, 2017
Manoj Singh Adhikari
exaly  

New method for the extraction of MOSFET parameters

Electronics Letters, 1988
Gérard Ghibaudo
exaly  

An improved MOSFET model for circuit simulation

IEEE Transactions on Electron Devices, 1998
K Joardar, C C McAndrew
exaly  

Generalized guide for MOSFET miniaturization

IEEE Electron Device Letters, 1980
S M Sze, J R Brews, E H Nicollian
exaly  

A Novel 1.2 kV 4H-SiC Buffered-Gate (BG) MOSFET: Analysis and Experimental Results

IEEE Electron Device Letters, 2018
Jay Baliga, Kijeong Han, Woongje Sung
exaly