Results 141 to 150 of about 6,053 (208)
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The limitation of the Split-Gate MOSFET(SG-MOSFET) at 3.3kV
2021 International Conference on Electronics, Information, and Communication (ICEIC), 2021Split Gate MOSFET (SG-MOSFET) is one of the effective way to lower the gate-drain capacitance (C GD ). However, the applicability of 3.3 kV SiC MOSFET has not been studied yet. In this paper, comparative study of 3.3 kV 4H-SiC SG-MOSFET was confirmed by TCAD simulation compared with conventional MOSFET (C-MOSFET).
Kyuhyun Cha +3 more
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The A-MOSFET—A majority carrier accumulation MOSFET
Solid-State Electronics, 1982Abstract A novel MOSFET device structure is proposed that operates on the principle of majority carrier accumulation in the channel. The basic current equation is obtained for an n-channel structure.
Pierre E. Schmidt +2 more
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Simulation of MOSFET as horizontal magnetic mosfet (MAGFET)
2017 2nd International Conference on Frontiers of Sensors Technologies (ICFST), 2017This work proposes the regular long channel MOSFET structure used as magnetic MOSFET (MOSFET that can detect magnetic field) in parallel direction (y-axis). The structure is regular MOSFET that has drain, gate, source and substrate (body). The mechanism of device is Hall effect in current mode between channel MOSFET current and substrate current in x ...
Rattapong Nakachai +3 more
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On the Linearization of MOSFET Capacitors
2007 IEEE International Symposium on Circuits and Systems (ISCAS), 2007In this paper, a heuristic methodology for design of highly linear MOSFET capacitors (MOSCAPs) has been presented. For a certain amount of accessible chip area, the proposed algorithm intends to find the structure which has the least C-V variation. It uses a modified version of the genetic programming to optimize the capacitor topology and transistors'
Mohammad Danaie +2 more
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Designing of Graphene Based MOSFET and Comparison of it with Generalized MOSFET
2018 International Conference on Circuits and Systems in Digital Enterprise Technology (ICCSDET), 2018Graphene is semi-metal and an allotrope of carbon. It is emerging material in field of electronics and nanotechnology. In this paper, designing of MOSFET with graphene material and its analysis is done. The aim of this work is to compare DC characteristics, breakdown characteristics and small signal analysis of graphene based MOSFET with generalized ...
Anant H. Gambhir, Deepashree M. Bhalerao
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Distortion analysis of MOSFETS for application in MOSFET-C circuits
ISCAS '98. Proceedings of the 1998 IEEE International Symposium on Circuits and Systems (Cat. No.98CH36187), 2002The aim of this paper is to provide some guidelines on the design of MOS V-I converters. An explicit formula for the harmonic distortion based on an analytic model of the MOSFET has been derived for any inversion level. Experimental results for the distortion in the MOSFET V-I characteristics as well as biasing and tuning strategies applied to MOSFET-C
M.C. Schneider +3 more
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2014
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ZHU HUILONG, XU MIAO, LIANG QINGQING
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?????????????? SMD-1 ?????????????????? ?????????????????????????? ?????????????? ?? ???????????????????????? ?????????????????????? ???????????????????????? ?? ???????????????????????? ???? ?????????????? ?????????????????????????? ?? ????????????????????.
ZHU HUILONG, XU MIAO, LIANG QINGQING
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Electric and Hybrid Vehicle Technology International, 2019
A new technology that uses chip embedding of power MOSFETs in PCBs can meet increasing requirements for electrical power management systems
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A new technology that uses chip embedding of power MOSFETs in PCBs can meet increasing requirements for electrical power management systems
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