Results 131 to 140 of about 162,294 (344)
, 1997 对功率MOSFET的反向特性进行了模拟,着重分析了N沟功率MOSFET体内集成二极管的独特的作用,并对P沟器件在特性模拟时由于PSPICE模型参数的限制而表现出来的误差进行了分析,提出了改善措旋 ...
周宝霞, 王守觉, 陈治明
core
Device-Circuit Level Simulation Study of Three Inputs Complex Logic Gate Designed Using Nano-MOSFETs
Applications of Modelling and Simulation, 2019 Simulation study on silicon-based nano-MOSFETs logic circuits is needed to add more knowledge on the nanoscale circuit performance. Therefore, in this paper, simulation study is carried out on three inputs complex logic gate transistor circuits with four
Ooi Chek Yee
doaj
High Voltage, EarlyView.ABSTRACT Voltage source converter‐high‐voltage direct current (VSC‐HVDC) transmission is a key technology for renewable‐energy integration, regional grid interconnection and passive‐network power supply. This review summarises the development history of VSC‐HVDC, the evolution of converter topologies, its technical advantages and representative ...
Licheng Li +7 more
wiley +1 more source
Low-Loss Superjunction SiC MOSFET with Improved Breakdown Voltage and Reverse-Recovery Performance [PDF]
Xiangqi Hong, Xun Li
openalex +1 more source
High Voltage, EarlyView.ABSTRACT A new‐type power system serves as a critical technical support for the integration of new energy, and its secure and stable operation is of great importance. However, the extensive utilisation of power electronic devices leads to power equipment insulation being subjected to electrical stresses of high‐frequency harmonics, which can easily ...
Shengtao Li +4 more
wiley +1 more source
MOSFET technologies for double-pole four-throw radio-frequency switch
, 2014 This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems.
Srivastava, Viranjay M, Singh, Ghanshyam
core +1 more source
MicromachinesThe performance of the Si MOSFET is suppressed when the channel loses its control through the gate. This paper introduces a new and novel high-channel conducting orthogonally oriented selective buried triple gate vertical power MOSFET technology to study
M. Ejaz Aslam Lodhi +4 more
doaj +1 more source
IET Smart Energy Systems, EarlyView.A coupled Saber–TCAD–thermo‐mechanical simulation framework is proposed to evaluate microscopic stresses in SiC MOSFETs under overcurrent operation. Ultrahigh gate‐voltage driving reduces thermal and mechanical stress but increases gate oxide electric‐field stress, revealing a reliability tradeoff for DC solid‐state circuit breakers.
Bin Yu +3 more
wiley +1 more source
Engineering Reports, Volume 8, Issue 11, November 2026.This work presents a standalone smart wheelchair featuring dual voice‐ and gesture‐based control, obstacle avoidance, and real‐time location sharing. The system achieves 100% gesture accuracy and 94% voice accuracy, enabling safe, independent mobility for users with severe physical impairments and providing emergency support without smartphone ...
Md Nurul Huda Rifat +2 more
wiley +1 more source
Image Encoding With Blipped Gradients in an Echo Train
Magnetic Resonance in Medicine, Volume 96, Issue 5, Page 2530-2538, November 2026.ABSTRACT Purpose An MRI scanner was designed and built to encode k‐space points in the spin echoes occurring between 180∘ pulses in an echo train by using blipped B0 gradient pulses applied just prior to those spin echoes. Methods The proposed MRI scanner is a modification of an original design that used TRansmit Array Spatial Encoding (TRASE), a built‐
Logi Vidarsson, Gordon E. Sarty
wiley +1 more source