Results 131 to 140 of about 28,059 (259)

End-to-end test and MOSFET in vivo skin dosimetry for 192Ir high-dose-rate brachytherapy of chronic psoriasis

Journal of Contemporary Brachytherapy, 2019
Lalida Tuntipumiamorn, Pitchayut Nakkrasae, Sansanee Kongkum, Pittaya Dankulchai   +3 more
doaj   +1 more source

The MOSFET Transistor: characteristics and applications in modern electronics and emerging technologies

openNel contesto della società moderna l'evoluzione tecnologica ha preso una direzione che ha visto le componenti elettroniche emergere non più come semplici invenzioni destinate a migliorare la qualità dei prodotti commerciali, ma come elementi ...
RIOLMI ROSSETTO, DANIELE
core  

A temperature dependent analytical model & performance evaluation of triple-material dielectric-pocket gate-all-around MOSFET

Discover Applied Sciences
In current article, an analytical model of a Triple-Material Dielectric-Pocket Gate-All-Around (TM-DP-GAA) MOSFET has been presented for elevated temperature conditions. The numerical model of surface potential has been developed for temperatures ranging
Neeraj Gupta, Rashmi Gupta, Rekha Yadav, Prashant Kumar, Lalit Rai   +4 more
doaj   +1 more source

Research on High-power Full SiC Converter

机车电传动, 2018
In order to adapt to the development trend of high frequency and high power density of converter products, the application of high-power all-SiC-MOSFET device in converter was studied.
ZHANG Qing, ZHANG Xiaoyong, RAO Peinan, SHI Hongliang, ZHAO Mingrui, ZHOU Shuai   +5 more
doaj  

Reliability-oriented performance evaluation of PV inverters using wide bandgap semiconductors. [PDF]

PLoS One
Kshatri SS, Dhillon J, Mishra S, Sharma NK, Jadoun VK.   +4 more
europepmc   +1 more source

功率MOSFET反向特性的分析模拟

, 1997
对功率MOSFET的反向特性进行了模拟,着重分析了N沟功率MOSFET体内集成二极管的独特的作用,并对P沟器件在特性模拟时由于PSPICE模型参数的限制而表现出来的误差进行了分析,提出了改善措旋 ...
周宝霞, 王守觉, 陈治明
core  

Electro-Thermal Improvement in a β-Ga₂O₃ Cage-Integrated Slanted-Fin MOSFET. [PDF]

Micromachines (Basel)
Li J, Li Y, Peng K, Lu X, Ma X.
europepmc   +1 more source

An isolated MOSFET gate driver

, 1996
Traditional methods of isolated MOSFET/IGBT gate drive are presented, and their pros and cons assessed. The best options are chosen to meet our objective— a small, high speed, low cost, low power isolated gate drive module.\ud \ud Two small ferrite bead ...
Ledwich, Gerard F., Walker, Geoffrey R.
core  

Effects of parasitic capacitance on switching transients and thermal performance in a single-phase SiC power MOSFET inverter. [PDF]

Sci Rep
Cheng HC, Jhu WY, Liu YC, Yu CF, Chiu PK, Chang TC.   +5 more
europepmc   +1 more source

Channel and Body-Diode Conduction Characteristics in 4H-SiC MOSFETs Under Third-Quadrant Switching Conditions. [PDF]

Micromachines (Basel)
Huang X, Song Y, Zhong C, Wang Z.
europepmc   +1 more source