Results 131 to 140 of about 6,198 (180)

Packaging Design and Thermal Characterization of 3D Double-Sided Cooling Automotive SiC Power Modules with Reliable Junction Temperature Sensing. [PDF]

Sensors (Basel)
Li C, Lin T, Guo X, Wang R, Chen Y, Zhou S.   +5 more
europepmc   +1 more source

Integrated Optical System for Mobile Atomic Interferometric Gravity Gradient. [PDF]

Sensors (Basel)
Wang J, Han B, Bai J, Wang Y.
europepmc   +1 more source

Design of a SiC MOSFET Gate Driver Chip Based on Adaptive Active Drive Technology. [PDF]

Micromachines (Basel)
Li Q, Zhang Y, Huang B, Zhang W, Chen C, Lei J, Zhang D, Min R, Tong Q.   +8 more
europepmc   +1 more source

Evaluation of electric vehicle performance using driving cycle clustering based on motor-inverter losses and efficiency. [PDF]

Sci Rep
Abdelali K, Bendjedia B, Rizoug N, Kraiem H, Flah A.   +4 more
europepmc   +1 more source

Patient doses in image-guided radiotherapy: status in Europe for cone-beam CT imaging in the pelvic region. [PDF]

Radiol Oncol
Kansanoja T, Brovchuk S, Vezirovic M, Petrovic B, Amico AG, Sapignoli S, Paiusco M, Ferrari P, Sá AC, Dias AG, Teles P, Siiskonen T.   +11 more
europepmc   +1 more source

Voltage compensation of manufacturing errors applied to artificial band gaps in nanoscale transistor. [PDF]

Sci Rep
Aghajani A, Karsenty A.
europepmc   +1 more source

High Performance Multiple Inversion Layer Selective Buried Triple Gate Vertical Trench Power MOSFET. [PDF]

Sci Rep
Lodhi MEA, Loan SA, Ansari AQ, Urooj S, Napte K.   +4 more
europepmc   +1 more source

A 40 Gbps low-power inverter-based CNTFET optical receiver. [PDF]

Sci Rep
Zamani N, Amoon M, Alaie Z, Farzanegan MD.   +3 more
europepmc   +1 more source

A First-Principles Study of Monolayer B₄Cl₄: Structural Stability, Anisotropic Electronic Properties, and Ballistic Transport Projections in Sub‑5 nm MOSFETs. [PDF]

ACS Omega
Li Z, Zhang Z, Liang S, Wang X, Han J.
europepmc   +1 more source

Challenges, Power-Device Progress, and Emerging Harsh-Environment Applications for Ultrawide-Bandgap Diamond Semiconductors. [PDF]

Materials (Basel)
Alshammari N, Rao MV, Li Q.
europepmc   +1 more source