ABSTRACT In the present study, we have analyzed the growth profile of ruthenium (Ru) thin films, deposited using pulsed direct current (DC) magnetron sputtering technique, by varying the sputtering voltages in the range of 150–420 V. The grazing incidence X‐ray reflectivity (GIXRR), time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS), and atomic ...
Shruti Gupta +6 more
wiley +1 more source
In current article, an analytical model of a Triple-Material Dielectric-Pocket Gate-All-Around (TM-DP-GAA) MOSFET has been presented for elevated temperature conditions. The numerical model of surface potential has been developed for temperatures ranging
Neeraj Gupta +4 more
doaj +1 more source
Research on High-power Full SiC Converter
In order to adapt to the development trend of high frequency and high power density of converter products, the application of high-power all-SiC-MOSFET device in converter was studied.
ZHANG Qing +5 more
doaj
Patient doses in image-guided radiotherapy: status in Europe for cone-beam CT imaging in the pelvic region. [PDF]
Kansanoja T +11 more
europepmc +1 more source
Evaluation of electric vehicle performance using driving cycle clustering based on motor-inverter losses and efficiency. [PDF]
Abdelali K +4 more
europepmc +1 more source
A First-Principles Study of Monolayer B<sub>4</sub>Cl<sub>4</sub>: Structural Stability, Anisotropic Electronic Properties, and Ballistic Transport Projections in Sub‑5 nm MOSFETs. [PDF]
Li Z, Zhang Z, Liang S, Wang X, Han J.
europepmc +1 more source
High Performance Multiple Inversion Layer Selective Buried Triple Gate Vertical Trench Power MOSFET. [PDF]
Lodhi MEA +4 more
europepmc +1 more source
Car Safety Airbags Based on Triboelectric Nanogenerators. [PDF]
Cha B, Luo J, Guo Z, Pu H.
europepmc +1 more source
Multi-State Probabilistic Computing Using Floating-Body MOSFETs Based on the Potts Model for Solving Complex Combinatorial Optimization Problems. [PDF]
Cheong S +9 more
europepmc +1 more source

