Results 111 to 120 of about 162,294 (344)
Improved MOSFET drive circuit.
Improved MOSFET drive circuit.
Yongjie Liu (3166032) +3 more
core +1 more source
Spatially resolved heavy ion microprobe testing of lateral Ga2O3 MOSFETs [PDF]
Cale Overstreet +11 more
openalex +2 more sources
ABSTRACT Purpose Ultra‐high field (≥ 7 T) and 3 T MRI suffer from B1+ inhomogeneity and signal loss. Conventional metasurfaces that mitigate B1+ inhomogeneity and improve image SNR are “fixed” in nature and designed for a single Larmor frequency. This study demonstrates the feasibility of an adaptive metasurface utilizing voltage‐controlled capacitors ...
Paul S. Jacobs +7 more
wiley +1 more source
MOSFET modeling with SPICE [PDF]
This project report is about the study of MOS Field Effect Transistor (MOSFET) characteristic for various channel length. In this project, the characteristic of n-channel enhancement-type MOSFET will be examined.
Jalaluddin, Suhana
core
Real‐Time Fractional Control of an Electrohydraulic System Using Low‐Cost Technology
ABSTRACT Advances in control methods for electrohydraulic systems (EHS) improve performance by addressing nonlinearities and unknown parameters, although most studies are limited to numerical simulations. Furthermore, research with experimental validation often relies on high‐performance computing equipment, specialized data acquisition cards, and ...
Edgar H. Robles‐Sauceda +5 more
wiley +1 more source
We propose a high-temperature-operation (HTOT) SOI MOSFET and show preliminary simulation results of its characteristics. It is demonstrated that HTOT SOI MOSFET operates safely at 700 K with no thermal instability because of its expanded effective ...
Yasuhisa Omura
doaj +1 more source
An Ergonomic Customizable Soft Robotic Glove Toward Personalized Hand Rehabilitation
Soft robotic gloves for hand rehabilitation are often limited by poor fit and uneven pressure on the fingers. Here, the authors report an ergonomic all‐fabric glove whose dual‐action actuators are tailored to individual finger geometry by CNC heat sealing, with symmetrical chambers that distribute interface pressure more evenly. Weighing only 90 g, the
Rui Chen +13 more
wiley +1 more source
Конструктивно-технологические особенности MOSFET-транзисторов
Рассмотрены различные структуры и конструктивно-технологические особенности металлооксидных полупроводниковых полевых транзисторов (MOSFET). Определены оптимальные варианты конструктивно-технологического исполнения MOSFET и способы монтажа кристаллов в ...
Керенцев, А. Ф. +1 more
core +1 more source
Self-heating effect modeling of a carbon nanotube-based fieldeffect transistor (CNTFET) [PDF]
We present the design and simulation of a single-walled carbon nanotube(SWCNT)-based field-effect transistor (FET) using Silvaco TCAD. In this paper, theself-heating effect modeling of the CNT MOSFET structure is performed and comparedwith conventional ...
Kazem Pourchitsaz +1 more
doaj
Synthesis of Amorphous‐Crystalline Mixture Boron Nitride for Balanced Resistive Switching Operation
An amorphous–crystalline mixture BN (acm‐BN) is synthesized through low‐pressure chemical vapor deposition, achieving balanced resistive switching with low SET voltage and stable RESET. High‐resolution transmission electron microscopy reveals that BN films are fully amorphous at 930 °C, a mixed amorphous–crystalline phase is achieved at 990 °C.
Kyung Jin Ahn +8 more
wiley +1 more source

