Results 111 to 120 of about 28,059 (259)

Energy Optimal Switching Frequency for a 750V Metro Traction Drive Using Silicon Carbide MOSFET Inverter

, 2018
The introduction of Silicon Carbide (SiC) MOSFET based inverters into the traction drive makes it possible to increase the inverter switching frequency and reduce energy consumption.
Dahlquist, Erik,, Moskull, Henrik,, Lindahl, Martin,, Maher, Azaza,, Trosten, Torbjörn,   +4 more
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Physical Implementation of Optical Material‐Based Neural Networks Processing Enabled by Long‐Persistent Luminescence

Advanced Science, Volume 13, Issue 31, 4 June 2026.
This study reports on the physical implementation of optical material‐based neural processing using long‐persistent luminescence as memory‐retention and nonlinear optical material. The system performs optical‐domain preprocessing with opto‐electronic interfaces for stimulus delivery and readout, enabling real‐time demonstrations including Pong gameplay
Sangwon Wi, Yunsang Lee
wiley   +1 more source

High Mobility (>200 cm2 V−1 s−1) Transparent Top Gate IGZO TFTs with Oxidized Metal Gate Insulator for Enhanced Conductivity

Advanced Electronic Materials, Volume 12, Issue 11, 8 June 2026.
We demonstrate a top gate Nb capping TFT architecture that induces controlled oxygen out‐diffusion from the IGZO channel. This mechanism generates shallow donor states and enhances electron delocalization, enabling extended percolation pathways. The resulting thin‐film transistors exhibit high mobility, suppressed leakage currents, and strong optical ...
Hyeonjeong Sun, Yeoeun Yun, Kyubin Hwang, Jiyoung Bang, Seungmin Choi, Seungjae Lee, Taeyang Kim, Suhwon Choi, Eunsuk Choi, Jae Kyeong Jeong, Seung‐Beck Lee   +10 more
wiley   +1 more source

A Double-Sided Cooling Approach of Discrete SiC MOSFET Device Based on Press-Pack Package

IEEE Open Journal of Power Electronics
The conventional TO-247-3 packages with single-sided cooling limit the thermal and electrical performances of discrete SiC MOSFET devices. In this paper, a double-sided cooling press-pack (PP) packaging approach for the discrete SiC MOSFET device is ...
Ran Yao, Zheyan Zhu, Hui Li, Wei Lai, Xianping Chen, Francesco Iannuzzo, Renkuan Liu, Xiaorong Luo   +7 more
doaj   +1 more source

Wide‐Bandgap Semiconductor‐Based Neuromorphic Computing

Information &Functional Materials, Volume 3, Issue 2, Page 66-100, June 2026.
Wide‐bandgap semiconductors enable robust, low‐power neuromorphic devices for extreme environments. This review outlines material advantages, device physics, integration, and future directions for next‐generation brain‐inspired computing. ABSTRACT Neuromorphic computing has emerged as a promising paradigm to overcome the energy inefficiency and data ...
Hongyu Tang, Pengsheng Min, Yang Zhang, Qingchun Zhang, Wanlu Zhang, Ruiqian Guo, Guoqi Zhang   +6 more
wiley   +1 more source

Compact Modeling for a Double Gate MOSFET

, 2009
MOSFETs (metal-oxide-silicon field-effect transistors) are an integral part of modern electronics. Improved designs are currently under investigation, and one that is promising is the double gate MOSFET.
Davis, Anthony, Crowdy, Darren, Ahmed, Saleem, Cumberbatch, Ellis, Grigsby, Mike, Smith, Stefan Llewellyn, Hall, Cameron, Breward, Chris, Fehribach, Joseph D.   +8 more
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Mosview [PDF]

, 2005
Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Ciência da Computação.Apresenta-se uma ferramenta gráfica chamada MOSVIEW, com a finalidade de auxiliar no projeto de circuitos analógicos ...
Machado, Cátia dos Reis
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Coaxial Dipole Array With Switching Transmit Sensitivities for Ultrahigh Field MRI

Magnetic Resonance in Medicine, Volume 95, Issue 6, Page 3608-3615, June 2026.
ABSTRACT Purpose To investigate dipole antennas with electronically switchable transmit field patterns to improve flip angle homogeneity in ultra‐high field MRI. Methods Reconfigurable dipole elements that could produce two distinct electronically switchable B1+ field profiles were conceptualized and constructed.
Dario Bosch, Georgiy A. Solomakha, Felix Glang, Martin Freudensprung, Nikolai Avdievich, Klaus Scheffler   +5 more
wiley   +1 more source

Compressively-strained, buried-channel $Si_{0.7}$Ge$_{0.3}$ p-MOSFETs fabricated on SiGe virtual substrates using a 0.25 µm CMOS process

, 2004
Enhanced performance is demonstrated from a buried, compressively strained-Si0.7Ge0.3 p-MOSFET fabricated on a relaxed Si0.85Ge0.15 using a high thermal budget 0.25 µm CMOS process.
Zhang, Jing, Cerrina, Claudia, Paul, Douglas J., Temple, Matthew P., Li, Xiabbing, Olsen, Sarah H., Tang, Yue T., Evans, Alan G.R., O’Neill, Anthony G., Waite, Andrew M.   +9 more
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MOSFET modeling with SPICE [PDF]

, 2004
This project report is about the study of MOS Field Effect Transistor (MOSFET) characteristic for various channel length. In this project, the characteristic of n-channel enhancement-type MOSFET will be examined.
Jalaluddin, Suhana
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