Results 91 to 100 of about 28,059 (259)
Gongneng cailiao yu qijian xuebaoIn this paper, the carrier transport characteristics of a high-performance SiGe-on-insulator p-channel metal-oxide-semiconductor field-effect transistor (SiGe-OI pMOSFET) are systematically investigated using a back-gate modulation method.
Zhengyang CHEN +2 more
doaj +1 more source
Journal of Applied Clinical Medical Physics, Volume 27, Issue 6, June 2026.Abstract Background In post‐mastectomy radiotherapy, tissue‐equivalent bolus is routinely used to ensure adequate skin dose. However, achieving perfect contact on curved chest walls is challenging, often resulting in non‐uniform air gaps. With the increasing adoption of Flattening Filter‐Free (FFF) beams, it is crucial to understand how their distinct ...
Long‐Gang Gui, Yin Poo
wiley +1 more source
, 2001 Compact MOS models based on surface potential are now firmly established, but for practical applications there is no reliable link between measured values of threshold voltage and the flat-band voltage on which such models are based.
Easson, Craig A. +6 more
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Analysis of the impact of the drain-junction tunneling effect on a microwave MOSFET from S-parameter measurements [PDF]
, 2009 A procedure to analyze the effect of the MOSFET drain-bulk junction tunneling current at high frequencies is presented. This procedure allows identifying the presence of band-to-band tunneling in short channel-length MOSFETs at different drain-to-source ...
EMMANUEL TORRES RIOS +2 more
core +1 more source
Self‐Healing and Stretchable Synaptic Transistor
Advanced Functional Materials, Volume 36, Issue 48, 15 June 2026.A self‐healing stretchable synaptic transistor (3S‐T) is realized using a p‐PVDF‐HFP‐DBP/PDMS‐MPU‐IU bilayer as gate insulator, where dipole‐dipole interaction enhances polarization to achieve a large memory window. Leveraging its neuronal biomimicry, the synaptic transistor demonstrates electrically compatibility with the biological brain. Furthermore,
Hyongsuk Choo +10 more
wiley +1 more source
Design of 50nm Vertical MOSFET Incorporating a Dielectric Pocket
, 2004 A new architecture for a vertical MOS transistor is proposed that incorporates a so-called dielectric pocket (DP) for suppression of short channel effects and bulk punch-through.
Donaghy, D +4 more
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High‐Performance, Paper‐Based Microelectronics via a Micromodular Fabrication Process
Advanced Materials Interfaces, Volume 13, Issue 12, 23 June 2026.This study demonstrates high‐performance silicon micromodular transistors on cellulose nanomaterial‐coated paper, with interconnects formed via e‐jet printing. Transistors exhibit excellent electrical properties and maintain performance under applied strain.
Rebecca K. Banner +9 more
wiley +1 more source
, 2018 Dalam perancangan sebuah sistem elektronika, ada beberapa alat yang harus diperlukan agar alat tersebut bisa berjalan sesuai yangn diinginkan. Salah satu bentuk alat tersebut adalah transistor.
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Impact of Oxygen Plasma Pre‐Treatment on Thermal Oxidation and Reliability of SiO2 on 4H‐SiC
Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.We investigate how oxygen plasma pre‐treatment affects the thermal oxidation of silicon carbide. While plasma modification increases growth rates by 84%, it reduces dielectric breakdown strength by 18%. Our findings reveal that although plasma improves the interface state density, it introduces structural damage, highlighting a critical trade‐off ...
Chezhiyan Nanjappan +3 more
wiley +1 more source
, 2012 La dosimétrie in vivo (DIV) permet d'assurer le contrôle de qualité des applications de radiothérapie externe. Si la réglementation rend l'application de la DIV obligatoire, cette procédure reste cependant considérée comme " techniquement difficilement ...
Sors, Aurélie
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