Results 91 to 100 of about 162,294 (344)

SPEED CONTROL OF D.C SERIES MOTOR BY USING POWER MOSFET CHOPPER

open access: yesAl-Qadisiyah Journal for Engineering Science, 2010
The aim of this paper is to construct a system which can control the speed of d.c series motor by using power MOSFET chopper .The system contains close loop control which has a performance and characteristics in the operation.The close loop control ...
Abdullah Omran Ali
doaj  

Bayesian Optimization–Reinforcement Learning Hybrid Framework for a‐IGZO Thin‐Film Transistor Compact Model Parameter Extraction in 2T0C Dynamic Random Access Memory Applications

open access: yesAdvanced Intelligent Systems, EarlyView.
A training‐free two‐stage BO–RL framework extracts compact model parameters for a‐IGZO TFTs, reaching BO‐level fitting quality at a constant per‐simulation optimization cost. Bayesian optimization performs exploration and provides an optimized starting point.
Seunghyun Son   +4 more
wiley   +1 more source

Experimental electromagnetic compatibility of conducted electromagnetic interferences from an IGBT and a MOSFET in the power supply

open access: yesElectrical engineering & Electromechanics
Introduction. Most electromagnetic compatibility studies carried out in the context of power switch research are generally valid for low frequencies. This frequency restriction appears to be too restrictive for a complete analysis of the electromagnetic ...
M. E. Lahlaci, M. Miloudi, H. Miloudi
doaj   +1 more source

An Intelligent Piezoelectric System Integrating Self‐Sensing and Autonomous Operation for Adaptive Vibration Control

open access: yesAdvanced Intelligent Systems, EarlyView.
An intelligent piezoelectric vibration control system integrating self‐sensing, autonomous operation, and adaptive bias‐flip synchronized switching damping (SSD) is developed. The system detects vibration extrema, executes synchronized switching control, and autonomously establishes the bias voltage without external sensing instruments, achieving ...
Hao Tang, Weiqun Liu, Guobiao Hu
wiley   +1 more source

Caracterização elétrica do transistor mosfet [PDF]

open access: yes, 2023
Knowledge of transistors is of paramount importance for the student of electronics. The objective of this work is to make the electrical characterization of the Mosfet transistor. This is bibliographical research and the use of measuring instruments from
Silva , Mário Jorge Aragão da
core  

Low‐Dimensional Materials and Van Der Waals Heterostructures for Energy Application: A Comprehensive Review

open access: yesENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam   +3 more
wiley   +1 more source

Evaluation of Silicone Carbide Mosfet Driving Circuit Performance

open access: yes
The performances of different driving circuits configurations designed for silicon carbide MOSFET transistors are compared in this research. The simulation of the double-pulse test (DPT) was performed with the use of three driving circuit configurations.
Veronika Švárna, Michal Frivaldsky
core   +1 more source

Reconfigurable Logic Operation of MoTe2 Homojunction Enabled by Staggered Double‐Sided Contacts

open access: yesElectron, EarlyView.
A gap adjacent to an electrode in the MoTe2 SDC transistor enables polarity reconfiguration, switching between p‐type and n‐type depending on bias polarity. This reconfiguration is ensured when the absolute bias voltage is less than the gate voltage, yielding a near‐ideal subthreshold swing of 67.6 mV/dec and on/off ratios of 104–106.
Jun‐Qiang Zhang   +7 more
wiley   +1 more source

teknik Mosfet Dalam Pembuatan Untai Terpadu (IC) [PDF]

open access: yes, 1984
MOSFET dalam teknik pembuatan untai terpadu sangat sesuai kareana mempungai karakteristik sesuai dan mempunyai konstruksi yang paling kecil. Hal ini sangat menguntungkan untuk perencanaan dan pelaksanaan pembuatan untai terpadu.
Ismadi
core   +2 more sources

Investigation of carrier transport in high performance Si0.73Ge0.27-OI pMOSFET through back-gate modulation

open access: yesGongneng cailiao yu qijian xuebao
In this paper, the carrier transport characteristics of a high-performance SiGe-on-insulator p-channel metal-oxide-semiconductor field-effect transistor (SiGe-OI pMOSFET) are systematically investigated using a back-gate modulation method.
Zhengyang CHEN   +2 more
doaj   +1 more source

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