Results 91 to 100 of about 162,294 (344)
SPEED CONTROL OF D.C SERIES MOTOR BY USING POWER MOSFET CHOPPER
The aim of this paper is to construct a system which can control the speed of d.c series motor by using power MOSFET chopper .The system contains close loop control which has a performance and characteristics in the operation.The close loop control ...
Abdullah Omran Ali
doaj
A training‐free two‐stage BO–RL framework extracts compact model parameters for a‐IGZO TFTs, reaching BO‐level fitting quality at a constant per‐simulation optimization cost. Bayesian optimization performs exploration and provides an optimized starting point.
Seunghyun Son +4 more
wiley +1 more source
Introduction. Most electromagnetic compatibility studies carried out in the context of power switch research are generally valid for low frequencies. This frequency restriction appears to be too restrictive for a complete analysis of the electromagnetic ...
M. E. Lahlaci, M. Miloudi, H. Miloudi
doaj +1 more source
An intelligent piezoelectric vibration control system integrating self‐sensing, autonomous operation, and adaptive bias‐flip synchronized switching damping (SSD) is developed. The system detects vibration extrema, executes synchronized switching control, and autonomously establishes the bias voltage without external sensing instruments, achieving ...
Hao Tang, Weiqun Liu, Guobiao Hu
wiley +1 more source
Caracterização elétrica do transistor mosfet [PDF]
Knowledge of transistors is of paramount importance for the student of electronics. The objective of this work is to make the electrical characterization of the Mosfet transistor. This is bibliographical research and the use of measuring instruments from
Silva , Mário Jorge Aragão da
core
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam +3 more
wiley +1 more source
Evaluation of Silicone Carbide Mosfet Driving Circuit Performance
The performances of different driving circuits configurations designed for silicon carbide MOSFET transistors are compared in this research. The simulation of the double-pulse test (DPT) was performed with the use of three driving circuit configurations.
Veronika Švárna, Michal Frivaldsky
core +1 more source
Reconfigurable Logic Operation of MoTe2 Homojunction Enabled by Staggered Double‐Sided Contacts
A gap adjacent to an electrode in the MoTe2 SDC transistor enables polarity reconfiguration, switching between p‐type and n‐type depending on bias polarity. This reconfiguration is ensured when the absolute bias voltage is less than the gate voltage, yielding a near‐ideal subthreshold swing of 67.6 mV/dec and on/off ratios of 104–106.
Jun‐Qiang Zhang +7 more
wiley +1 more source
teknik Mosfet Dalam Pembuatan Untai Terpadu (IC) [PDF]
MOSFET dalam teknik pembuatan untai terpadu sangat sesuai kareana mempungai karakteristik sesuai dan mempunyai konstruksi yang paling kecil. Hal ini sangat menguntungkan untuk perencanaan dan pelaksanaan pembuatan untai terpadu.
Ismadi
core +2 more sources
In this paper, the carrier transport characteristics of a high-performance SiGe-on-insulator p-channel metal-oxide-semiconductor field-effect transistor (SiGe-OI pMOSFET) are systematically investigated using a back-gate modulation method.
Zhengyang CHEN +2 more
doaj +1 more source

