Results 71 to 80 of about 162,294 (344)

A Compact and Fast Single‐Spike TTFS Encoder With Ultralow Operating Voltage for Efficient Neuromorphic Fourier Transform

Advanced Science, EarlyView.
A Pt/TaOx/V single‐spike TTFS encoder achieves ultralow‐voltage (∼0.35 V), high‐speed (∼100 ns) operation with simplified circuitry. Integrating bipolar nonuniform temporal encoding with a spiking‐DFT neuron model enables a neuromorphic FFT framework. Device‐calibrated simulations demonstrate high spectral fidelity across multitone, speech, and chirp ...
Yang Wu, Qi Wei, Junfeng Zhang, Lirou Su, Ning Mao, Beibei Huang, Jiaying Chen, Dian Huang, Shengzhong Feng, Yishu Zhang, Shuai Zhong   +10 more
wiley   +1 more source

Um monitor do estado de carga da bateria de dispositivos eletrônicos implantáveis [PDF]

, 2006
Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Engenharia ElétricaThis work proposes a system, of very low power consumption, able to monitor the remaining charge of the batteries used in
Machado, Márcio Bender
core  

Hybrid Spring‐Coupled Broadband Energy Harvester Integrated with CuSCN Functionalized Triboelectric Vibration Sensor for Self‐Sustainable Vehicular IoTs

Advanced Science, EarlyView.
A self‐sustainable vehicular vibration and indoor environment monitoring IoT platform is developed which integrates a hybrid spring‐coupled broadband energy harvester with a machine learning‐assisted PAN‐CuSCN nanofiber triboelectric vibration sensor for subtle‐to‐wide‐range vibration detection and road/speed classification.
Trilochan Bhatta, Gagan Bahadur Pradhan, Shital Sharma, MoonSeong Jo, Aklesh Teli, Hochan Chang, Jae Yeong Park   +6 more
wiley   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Electrical Characteristics of Single, Double and Surround Gate Vertical MOSFETs with Reduced Overlap Capacitance

, 2003
The vertical MOSFET structure is one of the solutions for reducing the channel length of devices under 50nm. Surround gate structures can be realised which offer improved short channel effects and more channel with per unit silicon area. In this paper, a
Uchino, T, Donaghy, D, Ashburn, P, Gili, E, de Groot, C H, Hall, S, Kunz, V D   +6 more
core   +1 more source

Hydrogen-terminated and oxygen-terminated diamond metal-oxide-semiconductor field-effect transistors

Functional Diamond
Extensive research has been conducted on wide-bandgap semiconductor diamond for the advancement of high-power, high-frequency, and high-temperature electronic devices. The author has established long-term collaboration with Prof.
Jiangwei Liu
doaj   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Beyond Charge: Field‐Effect Transistors in Multimodal Biosensing Platforms for Biomolecular Interaction Studies

Advanced Electronic Materials, EarlyView.
This review summarizes the developments in field‐effect transistor (FET)‐based dual‐mode sensor platforms and what can be learned from them. It identifies charge as a crucial factor in biomolecular interactions at interfaces, outlines the challenges of hybrid systems, and highlights their benefits.
Roger Hasler, Ciril Reiner‐Rozman, Christoph Kleber, Jakub Dostalek, Wolfgang Knoll   +4 more
wiley   +1 more source

Exploración de dispositivos MOSFET usando COMSOL multiphysics [PDF]

, 2012
In this work, we use the simulator COMSOL Multiphysics to model three types of MOSFETs: bulk channel, DG-MOSFET and SOI-MOSFET. We present an introduction to semiconductor theory. Next we nd the characteristic curves from the MOSFET model provided by
Bustamante Guevara, José
core