Results 71 to 80 of about 28,059 (259)

Caracterização elétrica do transistor mosfet [PDF]

open access: yes, 2023
Knowledge of transistors is of paramount importance for the student of electronics. The objective of this work is to make the electrical characterization of the Mosfet transistor. This is bibliographical research and the use of measuring instruments from
Silva , Mário Jorge Aragão da
core  

Hydrogen-terminated and oxygen-terminated diamond metal-oxide-semiconductor field-effect transistors

open access: yesFunctional Diamond
Extensive research has been conducted on wide-bandgap semiconductor diamond for the advancement of high-power, high-frequency, and high-temperature electronic devices. The author has established long-term collaboration with Prof.
Jiangwei Liu
doaj   +1 more source

From Ship to Shore: A Review of Vessel‐To‐Grid Bidirectional Charging for Sustainable Maritime Transport

open access: yesEcoEnergy, EarlyView.
As maritime transport electrifies, bidirectional charging (V2G) offers a dual‐purpose solution for energy resilience and economic viability. This work identifies key technological advancements and lifecycle challenges utilizing practical case studies to demonstrate how V2G systems can drive decarbonization and grid stability in the marine sector ...
Jonathan Bloor   +3 more
wiley   +1 more source

Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation

open access: yesSensors, 2017
A power MOSFET linearizer is proposed for a high-voltage power amplifier (HVPA) used in high-frequency pulse-echo instrumentation. The power MOSFET linearizer is composed of a DC bias-controlled series power MOSFET shunt with parallel inductors and ...
Hojong Choi   +3 more
doaj   +1 more source

Low‐Dimensional Materials and Van Der Waals Heterostructures for Energy Application: A Comprehensive Review

open access: yesENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam   +3 more
wiley   +1 more source

A Novel 4H‐SiC MOSFET With High‐K/Low‐K Dielectric for Improved Frequency Characteristics

open access: yesIET Power Electronics
Split‐Gate MOSFET (SG‐MOSFET) is promising in power‐switching circuits due to the fast turn‐on/off speed and low switching loss. However, in higher‐frequency applications, the gate architecture needs to be changed to obtain the improved high‐frequency ...
Jiaxing Chen, Juntao Li, Lin Zhang
doaj   +1 more source

Exploding Bridgewire (EBW) Detonators: An Example of Synergistic Multiphysics

open access: yesPropellants, Explosives, Pyrotechnics, EarlyView.
ABSTRACT Exploding bridgewire (EBW) detonators are highly temporally reproducible explosive devices that require the rapid discharge of a high‐voltage capacitance to operate and so are immune to most of the accidental hazards associated with traditional electric detonators.
P. J. Rae   +3 more
wiley   +1 more source

Advances in Gate Dielectrics for 2D Electronics

open access: yesphysica status solidi (RRL) – Rapid Research Letters, EarlyView.
This review discusses advanced gate dielectric integration for 2D electronic devices, including layered and nonlayered dielectric materials, while highlighting strategies such as seed‐assisted ALD, transfer methods, and in situ oxidation. By focusing on interface engineering and materials innovation, new routes for scalable, high‐performance 2D ...
Moon‐Chul Jung   +2 more
wiley   +1 more source

Synthesis of Amorphous‐Crystalline Mixture Boron Nitride for Balanced Resistive Switching Operation

open access: yesSmall, EarlyView.
An amorphous–crystalline mixture BN (acm‐BN) is synthesized through low‐pressure chemical vapor deposition, achieving balanced resistive switching with low SET voltage and stable RESET. High‐resolution transmission electron microscopy reveals that BN films are fully amorphous at 930 °C, a mixed amorphous–crystalline phase is achieved at 990 °C.
Kyung Jin Ahn   +8 more
wiley   +1 more source

Electrostatically Doped DSL Schottky Barrier MOSFET on SOI for Low Power Applications

open access: yesIEEE Journal of the Electron Devices Society, 2018
In this paper, we propose and simulate a novel Schottky barrier MOSFET (SB-MOSFET) with improved performance in comparison to the conventional SB-MOSFET. The proposed device employs charge plasma/electrostatic doping-based dopant segregation layers (DSLs)
Faisal Bashir   +2 more
doaj   +1 more source

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