Results 51 to 60 of about 6,198 (180)

Beyond Charge: Field‐Effect Transistors in Multimodal Biosensing Platforms for Biomolecular Interaction Studies

Advanced Electronic Materials, EarlyView.
This review summarizes the developments in field‐effect transistor (FET)‐based dual‐mode sensor platforms and what can be learned from them. It identifies charge as a crucial factor in biomolecular interactions at interfaces, outlines the challenges of hybrid systems, and highlights their benefits.
Roger Hasler, Ciril Reiner‐Rozman, Christoph Kleber, Jakub Dostalek, Wolfgang Knoll   +4 more
wiley   +1 more source

Hydrogen-terminated and oxygen-terminated diamond metal-oxide-semiconductor field-effect transistors

Functional Diamond
Extensive research has been conducted on wide-bandgap semiconductor diamond for the advancement of high-power, high-frequency, and high-temperature electronic devices. The author has established long-term collaboration with Prof.
Jiangwei Liu
doaj   +1 more source

Organic Electrochemical Transistors for Energy‐Autonomous Bioelectronics: Materials, Devices, and System Integration

Advanced Electronic Materials, EarlyView.
This review surveys organic electrochemical transistors as core building blocks for energy‐autonomous bio‐integrated electronics. We outline device physics, OMIEC materials, and electrolyte effects that enable sub‐volt, high‐gain operation, and discuss direct coupling with mechanical, thermal, and optical energy harvesters to realize battery‐free ...
Jonggeun Park, Yeong Joo Jo, Yong Hyun Kwon, Sang‐Woo Kim   +3 more
wiley   +1 more source

Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation

Sensors, 2017
A power MOSFET linearizer is proposed for a high-voltage power amplifier (HVPA) used in high-frequency pulse-echo instrumentation. The power MOSFET linearizer is composed of a DC bias-controlled series power MOSFET shunt with parallel inductors and ...
Hojong Choi, Park Chul Woo, Jung-Yeol Yeom, Changhan Yoon   +3 more
doaj   +1 more source

Electrical Properties and Interfacial Strain in Thermally Oxidized 4H‐SiC MOS Structures Under Different Post‐Oxidation Annealing

Advanced Electronic Materials, EarlyView.
This work investigates the electrical properties and interfacial strain in thermally oxidized 4H‐SiC MOS structures under different post‐oxidation annealing. Nitrogen annealing simultaneously reduces interface state density and increases interfacial tensile strain, thus being accompanied by the formation of an interfacial dipole.
Fabrizio Roccaforte, Salvatore Ethan Panasci, Valerio Votadoro, Salvatore Di Franco, Marilena Vivona, Simone Milazzo, Marco Zignale, Filippo Giannazzo, Béla Pécz, Patrick Fiorenza   +9 more
wiley   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

A Novel 4H‐SiC MOSFET With High‐K/Low‐K Dielectric for Improved Frequency Characteristics

IET Power Electronics
Split‐Gate MOSFET (SG‐MOSFET) is promising in power‐switching circuits due to the fast turn‐on/off speed and low switching loss. However, in higher‐frequency applications, the gate architecture needs to be changed to obtain the improved high‐frequency ...
Jiaxing Chen, Juntao Li, Lin Zhang
doaj   +1 more source

Electrostatically Doped DSL Schottky Barrier MOSFET on SOI for Low Power Applications

IEEE Journal of the Electron Devices Society, 2018
In this paper, we propose and simulate a novel Schottky barrier MOSFET (SB-MOSFET) with improved performance in comparison to the conventional SB-MOSFET. The proposed device employs charge plasma/electrostatic doping-based dopant segregation layers (DSLs)
Faisal Bashir, Abdullah G. Alharbi, Sajad A. Loan   +2 more
doaj   +1 more source

Self‐Driving Laboratory Optimizes the Lower Critical Solution Temperature of Thermoresponsive Polymers

Advanced Intelligent Discovery, EarlyView.
A low‐cost, self‐driving laboratory is developed to democratize autonomous materials discovery. Using this "frugal twin" hardware architecture with Bayesian optimization, the platform rapidly converges to target lower critical solution temperature (LCST) values while self‐correcting from off‐target experiments, demonstrating an accessible route to data‐
Guoyue Xu, Renzheng Zhang, Tengfei Luo
wiley   +1 more source

Temperature‐Tunable Cholesteric Liquid Crystal Optical Combiners for Extended Reality Applications

Advanced Intelligent Systems, Volume 7, Issue 3, March 2025.
Recent advancements in extended reality highlight their potential to enhance traditional displays like liquid crystal displays and organic light‐emitting diode screens. This article introduces an innovative cholesteric liquid crystal‐based optical combiner for head‐mounted displays, enabling seamless transitions between augmented reality, virtual ...
Yuanjie Xia, Haobo Li, Marija Vaskeviciute, Daniele Faccio, Affar S. Karimullah, Hadi Heidari, Rami Ghannam   +6 more
wiley   +1 more source