Results 51 to 60 of about 77,589 (241)
Transistor Efek Medan Berbasis Semikonduktor Organik Pentacene untuk Sensor Kelembaban
Jurnal Nasional Teknik Elektro dan Teknologi Informasi, 2017 The purpose of this paper is to fabricate a humidity sensor from organic semiconductor and to understand the effect of the transistor`s structure on the sensitivity of humidity sensor.
Fadliondi, Budiyanto
doaj +1 more source
Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs [PDF]
, 2003 Intrinsic parameter fluctuations introduced by discreteness of charge and matter will play an increasingly important role when semiconductor devices are scaled to decananometer and nanometer dimensions in next-generation integrated circuits and systems ...
Asenov, A. +4 more
core +2 more sources
Advanced Materials, EarlyView.The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source
IEEE Access, 2023 This work proposes a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT-MOSFET) device architecture suitable for power conversion applications.
Nilesh Kumar Jaiswal, V. N. Ramakrishnan
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Applications of combined MOSFET-IGBT power leg with reduced switching losses [PDF]
, 2008 This paper discusses power legs built upon the combination of a MOSFET and an IGBT. The suggested combined use of those different switches is intended to be applied in PWM controlled single and three phase inverters.
Marinov, Angel S +2 more
core
High‐Performance, Paper‐Based Microelectronics via a Micromodular Fabrication Process
Advanced Materials Interfaces, EarlyView.This study demonstrates high‐performance silicon micromodular transistors on cellulose nanomaterial‐coated paper, with interconnects formed via e‐jet printing. Transistors exhibit excellent electrical properties and maintain performance under applied strain.
Rebecca K. Banner +9 more
wiley +1 more source
SN Applied Sciences, 2023 Linearity analysis of nanoscale devices is a vital issue as nonlinearity behavior is exhibited by them when employed in circuits for microwave and RF applications.
Sarita Misra +3 more
doaj +1 more source
Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology [PDF]
, 2009 An overview of ionizing radiation effects in imagers manufactured in a 0.18-μm CMOS image sensor technology is presented. Fourteen types of image sensors are characterized and irradiated by a 60Co source up to 5 kGy.
Estribeau, Magali +2 more
core +1 more source
Impact of Oxygen Plasma Pre‐Treatment on Thermal Oxidation and Reliability of SiO2 on 4H‐SiC
Advanced Materials Interfaces, EarlyView.We investigate how oxygen plasma pre‐treatment affects the thermal oxidation of silicon carbide. While plasma modification increases growth rates by 84%, it reduces dielectric breakdown strength by 18%. Our findings reveal that although plasma improves the interface state density, it introduces structural damage, highlighting a critical trade‐off ...
Chezhiyan Nanjappan +3 more
wiley +1 more source
Advanced Materials Interfaces, EarlyView.In this research, a simple and scalable strategy for protection of a few‐layer black phosphorus (FLBP) with a cellulose nitrate‐based material is presented. The FLBP is structurally and morphologically characterized. The FLBP stability with and without nitrocellulose protection is monitored by interferometric method, surface profile examination, and ...
Paweł Jakóbczyk +8 more
wiley +1 more source