Results 41 to 50 of about 162,294 (344)

Circuit-Specific and Technology-Independent Criterion for Selection of Power MOSFETs That Minimize Energy Dissipation

IEEE Access, 2023
We investigate the impact of power MOSFET channel width on the power efficiency of a switch-mode power supply. With this analysis, we derive a circuit-specific criterion that minimizes the power dissipated by a power MOSFET, which is based on the ratio ...
Vikas Joshi, Utkarsh Jadli, Peyush Pande, Mayank Chaturvedi, Daniel Haasmann, Sima Dimitrijev   +5 more
doaj   +1 more source

Lone‐Pair‐Induced Lattice Distortion in Lead‐Free Hybrid Perovskites for High‐Performance Nanogenerators

Advanced Functional Materials, EarlyView.
A lead‐free tin‐based hybrid perovskite is designed in which stereochemically active lone‐pair electrons on tin distort the crystal lattice and break its symmetry. Blended into a flexible polymer, the material converts pressure into electricity at milliwatt‐scale power density and continues working far below freezing, powering a commercial wristwatch ...
Majid Haji Bagheri, Asif Abdullah Khan, Md Fahim Al Fattah, Mahmoud Almadhoun, Shamaila Shahzadi, Aixi Pan, Md Soyaeb Hasan, Henry Wu, Arash Aghigh, Bhawna Bhawna, François Légaré, Vivek Maheshwari, Dayan Ban   +12 more
wiley   +1 more source

Leaky Integrate and Fire Neuron by Charge-Discharge Dynamics in Floating-Body MOSFET

Scientific Reports, 2017
Neuro-biology inspired Spiking Neural Network (SNN) enables efficient learning and recognition tasks. To achieve a large scale network akin to biology, a power and area efficient electronic neuron is essential.
Sangya Dutta, Vinay Kumar, Aditya Shukla, N. Mohapatra, U. Ganguly   +4 more
semanticscholar   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Técnica de Mosfet chaveado para filtros programáveis operando à baixa tensão de alimentação [PDF]

, 2002
Tese (doutorado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Engenharia Elétrica.O mercado e a necessidade de se implementar equipamentos portáteis têm pressionado a indústria a produzir circuitos com ...
Marques, Luís Cléber Carneiro
core  

Verification of angular dependence in MOSFET detector

Brazilian Journal of Radiation Sciences, 2019
In vivo dosimetry is an essential tool for quality assurance programs, being a procedure commonly performed with thermoluminescent dosimeters (TLDs) or diodes. However, a type of dosimeter that has increasing popularity in recent years is the metal-oxide-
Clayton Henrique de Souza
doaj   +1 more source

Vertical Gate‐All‐Around SiGeSn/GeSn/SiGeSn Nanowire Transistors for Energy‐Efficient Electronics

Advanced Materials Technologies, EarlyView.
Band‐engineered SiGeSn/GeSn/SiGeSn heterostructures enable complementary vertical nanowire MOSFETs and steep slope tunnel FETs (TFETs) within a unified Group‐IV platform. Leakage suppression and tunnelling‐path engineering demonstrate an effective strategy for future low‐power and energy‐efficient integrated electronics.
Kenta Moto, Yannik Junk, Marvin Frauenrath, Florian Bärwolf, Jean‐Michel Hartmann, Andreas Mai, Detlev Grützmacher, Joachim Knoch, Dan Buca, Qing‐Tai Zhao   +9 more
wiley   +1 more source

UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation [PDF]

, 2005
Intrinsic parameter fluctuations steadily increases with CMOS technology scaling. Around the 90nm technology node, such fluctuations will eliminate much of the available noise margin in SRAM based on conventional MOSFETs.
Samsudin, K., Cheng, B., Brown, A.R., Asenov, A., Roy, S., A. Asenov, A.R. Brown, B. Cheng, S. Roy, K. Samsudin   +9 more
core   +1 more source

Carrera de Especialización en Microelectrónica de la FIUBA: nuevo posgrado estratégico para impulsar el desarrollo tecnológico en Argentina y la región

Revista Elektrón
En marzo de 2026 el Consejo Superior de la Universidad de Buenos Aires aprobó la creación de la Carrera de Especialización en Microelectrónica en modalidad a distancia, dependiente de la Facultad de Ingeniería (FIUBA).
Mariano Garcia Inza, Pablo Gomez, Ariel Lutenberg   +2 more
doaj   +1 more source

Modeling the impacts of heavy charged particles on electrical characteristics of n-MOSFET device structure

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2020
The use of microelectronic products in outer space is possible if protection is provided against special external influencing factors, including radiation effect.
I. Yu. Lovshenko, V. R. Stempitsky, V. T. Shandarovich   +2 more
doaj   +1 more source