Results 41 to 50 of about 6,053 (208)

Study on Single-event Gate Rupture Mechanism of Asymmetric-trench SiC MOSFET

Yuanzineng kexue jishu
The demand for kilovolt-level radiation-hardened SiC devices in modern spacecraft is urgent. To provide a theoretical basis for the hardening design of SiC MOSFETs against single-event gate rupture (SEGR), a study on the single-event effects of 1 200 V ...
WANG Lihao1, 2, DONG Tao2, FANG Xingyu2, QI Xiaowei2, WANG Liang2, CHEN Miao2, ZHANG Xing1, ZHAO Yuanfu2
doaj   +1 more source

A Novel Gate Drive Circuit for Suppressing Turn-on Oscillation of Non-Kelvin Packaged SiC MOSFET

Energies, 2021
Compared with a silicon MOSFET device, the SiC MOSFET has many benefits, such as higher breakdown voltage, faster action speed and better thermal conductivity.
Hongyan Zhao, Jiangui Chen, Yan Li, Fei Lin   +3 more
doaj   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

Advanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt   +4 more
wiley   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Charge Transport in All‐Inorganic CuInSe2 Nanocrystal Transistors: Linking Material Design and Device Performance

Advanced Electronic Materials, EarlyView.
This work explores how colloidal CuInSe2 nanocrystals form functional field‐effect transistors when their native ligands are replaced with short inorganic species that promote charge transport. By systematically adjusting nanocrystal dimensions, surface treatments, film characteristics, and device architecture, the study maps the resulting electronic ...
Nadia Günther, Borja Rodriguez‐Barea, Jasmin L. Herzog, Bjarne E. Stern, Alexandre Ansieau, Angelika Wrzesinska‐Lashkova, Yana Vaynzof, Artur Erbe, Alexander Eychmüller   +8 more
wiley   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Self‐Driving Laboratory Optimizes the Lower Critical Solution Temperature of Thermoresponsive Polymers

Advanced Intelligent Discovery, EarlyView.
A low‐cost, self‐driving laboratory is developed to democratize autonomous materials discovery. Using this "frugal twin" hardware architecture with Bayesian optimization, the platform rapidly converges to target lower critical solution temperature (LCST) values while self‐correcting from off‐target experiments, demonstrating an accessible route to data‐
Guoyue Xu, Renzheng Zhang, Tengfei Luo
wiley   +1 more source

Hydrogen-terminated and oxygen-terminated diamond metal-oxide-semiconductor field-effect transistors

Functional Diamond
Extensive research has been conducted on wide-bandgap semiconductor diamond for the advancement of high-power, high-frequency, and high-temperature electronic devices. The author has established long-term collaboration with Prof.
Jiangwei Liu
doaj   +1 more source