Results 41 to 50 of about 6,198 (180)

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

Investigation of graded channel effect on analog/linearity parameter analysis of junctionless surrounded gate graded channel MOSFET

SN Applied Sciences, 2023
Linearity analysis of nanoscale devices is a vital issue as nonlinearity behavior is exhibited by them when employed in circuits for microwave and RF applications.
Sarita Misra, Sudhansu Mohan Biswal, Biswajit Baral, Sudhansu Kumar Pati   +3 more
doaj   +1 more source

Receptogenesis in a Vascularized Robotic Embodiment

Advanced Science, EarlyView.
Functional augmentation of situated robots via ex novo hardware generation extends physical adaptability. Drawing inspiration from open circulatory systems for mass and function redistribution, this study presents a vascularized robotic composite exhibiting receptogenesis ‐ the on‐demand construction of sensors ‐ from internal fluid reserves based on ...
Kadri‐Ann Pankratov, Leonid Zinatullin, Hans Priks, Adele Metsniit, Urmas Johanson, Tarmo Tamm, Alvo Aabloo, Edoardo Sinibaldi, Indrek Must   +8 more
wiley   +1 more source

Study on Single-event Gate Rupture Mechanism of Asymmetric-trench SiC MOSFET

Yuanzineng kexue jishu
The demand for kilovolt-level radiation-hardened SiC devices in modern spacecraft is urgent. To provide a theoretical basis for the hardening design of SiC MOSFETs against single-event gate rupture (SEGR), a study on the single-event effects of 1 200 V ...
WANG Lihao1, 2, DONG Tao2, FANG Xingyu2, QI Xiaowei2, WANG Liang2, CHEN Miao2, ZHANG Xing1, ZHAO Yuanfu2
doaj   +1 more source

Van der Waals Heterostructures for Next‐Generation Spintronics: Multiferroic‐Mediated Magnetoelectric Properties

Advanced Science, EarlyView.
As CMOS technology approaches fundamental energy limits, new paradigms for low‐power information processing are required. Magnetic systems are attractive for their spin transport, yet current‐induced magnetization control is energy inefficient. Multiferroic heterostructures enable energy‐efficient electric field manipulation of magnetism.
Donghyeon Lee, Jiwoong Yang, Inhyeok Oh, Sanghan Lee   +3 more
wiley   +1 more source

A Preclinical Multifunctional Capsule Robot with Unified Diagnosis and Targeted Thermal Therapy for Gastrointestinal Diseases

Advanced Science, EarlyView.
A proof‐of‐concept multifunctional capsule robot integrates diagnostic imaging, magnetic navigation, wireless power transfer, and targeted thermotherapy for gastrointestinal applications. Magnetically guided positioning and stable wireless power enable localized thermal ablation, achieving controlled heating and high cell mortality in vitro.
Heng Zhang, Yichong Sun, Xiaoting Zhang, Chi‐Kwan Lee, Zheng Li, Yehui Li, Huarong Chen, Paul D. Mitcheson   +7 more
wiley   +1 more source

Probabilistic Computing via Gate‐Tunable Random Telegraph Noise

Advanced Science, EarlyView.
Intrinsic random telegraph noise in metal–oxide–semiconductor field‐effect transistors is harnessed to create gate‐tunable probabilistic bits. By modulating carrier‐trapping dynamics, the device produces stochastic binary outputs with a continuous bias‐to‐probability transfer.
Gyungwon Yun, Jin Pyo Kang, Ho‐Sung Lee, Ik‐Hyeon Jeon, Ki‐Ju Park, Won‐Ju Cho, Seung‐heon Chris Baek, Joo‐Hyung Chae, Hamin Park   +8 more
wiley   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source