Results 41 to 50 of about 28,059 (259)

Desenvolvimento de um dosímetro in vivo a MOSFET para aplicações em radioterapia [PDF]

, 2013
Tese (doutorado) - Universidade Federal de Santa Catarina, Centro Tecnológico, Programa de Pós-Graduação em Engenharia Elétrica, Florianópolis, 2013.Na radioterapia (teleterapia), a diferença entre a dose prescrita e a dose recebida pelo paciente deve ...
Siebel, Osmar Franca
core  

High mobility III-V MOSFETs for RF and digital applications [PDF]

, 2007
Developments over the last 15 years in the areas of materials and devices have finally delivered competitive III-V MOSFETs with high mobility channels. This paper briefly reviews the above developments, discusses properties of the GdGaO/Ga2O3 MOS systems,
Kalna, K., A. Zlotnicka, Moran, D.A.J., D. Macintyre, H. Zhou, O. Hartin, Asenov, A., Zlotnicka, A., Passlack, M., M. Tutt, X. Li, Y.-B. Park, K. Kalna, Droopad, R., Hartin, O., Fejes, P., J. Abrokwah, E. Johnson, Tutt, M., Abrokwah, J., S. Thoms, A. Asenov, Zurcher, P., Rajagopalan, K., Thoms, S., Park, Y-B, Macintyre, D., D.A.J. Moran, M. Passlack, K. Rajagopalan, Li, X., Thayne, I.G., Zhou, H., P. Fejes, P. Zurcher, I.G. Thayne, R. Droopad, Hill, R.J.W., R.J.W. Hill, Johnson, E.   +39 more
core   +1 more source

Modeling the impacts of heavy charged particles on electrical characteristics of n-MOSFET device structure

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2020
The use of microelectronic products in outer space is possible if protection is provided against special external influencing factors, including radiation effect.
I. Yu. Lovshenko, V. R. Stempitsky, V. T. Shandarovich   +2 more
doaj   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

Efeitos da saturação de velocidade em aplicações de alta frequência do Mosfet [PDF]

, 2003
Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Engenharia ElétricaEste trabalho apresenta análise dos efeitos da saturação da velocidade dos portadores e do campo elétrico transversal na ...
Bork, Briam Cavalca
core  

Transistor Efek Medan Berbasis Semikonduktor Organik Pentacene untuk Sensor Kelembaban

Jurnal Nasional Teknik Elektro dan Teknologi Informasi, 2017
The purpose of this paper is to fabricate a humidity sensor from organic semiconductor and to understand the effect of the transistor`s structure on the sensitivity of humidity sensor.
Fadliondi, Budiyanto
doaj   +1 more source

Femtosecond‐Laser‐Induced Physical Unclonable Random Maze Structure for Storage‐Free Encryption

Advanced Science, EarlyView.
Femtosecond‐laser‐induced gold random maze structures serve as multimodal physical unclonable functions for storage‐free encryption. Their stochastic optical, electrical, and Raman responses are generated by plasmon‐assisted Marangoni formation and converted into AES‐compatible keys without permanent secret‐key storage, offering a portable route toward
Shiru Jiang, Hongliang Li, Shengjie Ma, Sang‐Shin Lee, Lei Wang, Mengyun Hu, Heping Zeng   +6 more
wiley   +1 more source

An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance

IEEE Access, 2023
This work proposes a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT-MOSFET) device architecture suitable for power conversion applications.
Nilesh Kumar Jaiswal, V. N. Ramakrishnan
doaj   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Investigation of graded channel effect on analog/linearity parameter analysis of junctionless surrounded gate graded channel MOSFET

SN Applied Sciences, 2023
Linearity analysis of nanoscale devices is a vital issue as nonlinearity behavior is exhibited by them when employed in circuits for microwave and RF applications.
Sarita Misra, Sudhansu Mohan Biswal, Biswajit Baral, Sudhansu Kumar Pati   +3 more
doaj   +1 more source