Results 21 to 30 of about 77,589 (241)
Novel Selection Criteria of Primary Side Transistors for LLC Resonant Converters [PDF]
, 2018 This work has been supported by the Spanish Government under Project MINECO-17-DPI2016-75760-R, Project DPI2014-56358-JIN and grant FPI BES-2014-070785, and by the Principality of Asturias under Project SV-PA-17-RIS3-4 and FEDER ...
Bauwens, Filip +5 more
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High Frequency Multipurpose SiC MOSFET Driver
Advances in Electrical and Electronic Engineering, 2021 This article describes a new multipurpose Silicone-Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) driver, which was designed and manufactured for a high frequency operating SiC transistor as a semiconductor switching device of ...
Jan Strossa +4 more
doaj +1 more source
Systematic Comparison of HF CMOS Transconductors [PDF]
, 2003 Transconductors are commonly used as active elements in high-frequency (HF) filters, amplifiers, mixers, and oscillators. This paper reviews transconductor design by focusing on the V-I kernel that determines the key transconductor properties.
Klumperink, Eric A.M., Nauta, Bram
core +3 more sources
Pengaturan Keseimbangan Pengisian dan Pengosongan Baterai Asam Timbal
Jurnal Nasional Teknik Elektro, 2016 In this paper proposed a system of balance settings for charging and discharging the lead-acid battery using a microcontroller arduino uno 16U2. The calculation of battery capacity using the method of As (Ampere-second). Before this is done, the value of
Mochammad Rismansyah, Refdinal Nazir
doaj +1 more source
Monte Carlo investigation of optimal device architectures for SiGe FETs [PDF]
, 1998 Strained silicon channel FETs grown on virtual SiGe substrates show clear potential for RF applications, in a material system compatible with silicon VLSI. However, the optimisation of practical RF devices requires some care.
Asenov, A. +4 more
core +1 more source
180nm metal gate, high-k dielectric, implant-free III--V MOSFETs with transconductance of over 425 μS/μm [PDF]
, 2007 : Data is reported from 180 nm gate length GaAs n-MOSFETs with drive current (Ids,sat) of 386 μA/μm (Vg=Vd =1.5 V), extrinsic transconductance (gm) of 426 μS/μm, gate leakage ( jg,limit) of 44 nA/cm2, and on resistance (Ron) of 1640 Ω μm. The gm and Ron
Droopad, R. +8 more
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High-frequency submicrosecond electroporator
Biotechnology & Biotechnological Equipment, 2016 In this work, we present a novel electroporator which is capable of generating single and bursts of high power (3 kV, 60 A) square wave pulses of variable duration (100 ns to 1 ms) with predefined repetition frequency (1 Hz to 3.5 MHz).
Vitalij Novickij +6 more
doaj +1 more source
Assessment of ecosystem integrity of lowland dipterocarp forest ecosystem using remote sensing [PDF]
, 2021 Ecosystem Integrity Index (EII) is a concept to determine the quality or the health of an ecosystem. The EII development can assist forest managers and decision makers in the conservation effort and forest management in Malaysia through the development ...
Abdul Razak, Muhammad Azmil
core
Recent research progress of single particle effect of SiC MOSFET
He jishu, 2022 With the rapid development of nuclear energy and space technology, application of high-voltage power devices based on SiC, especially the SiC MOSFET, is increasing. The problems of single event effect (SEE) caused by high-energy particle radiation in the
LIU Cuicui +6 more
doaj +1 more source
In vivo dose measurement using TLDs and MOSFET dosimeters for cardiac radiosurgery. [PDF]
, 2012 In vivo measurements were made of the dose delivered to animal models in an effort to develop a method for treating cardiac arrhythmia using radiation. This treatment would replace RF energy (currently used to create cardiac scar) with ionizing radiation.
Blanck, Oliver +6 more
core +2 more sources