Results 21 to 30 of about 6,053 (208)
DEVELOPMENT OF CONTROLLED RECTIFIERS BASED ON THE BIPOLAR WITH STATIC INDUCTION TRANSISTORS (BSIT)
Вестник Дагестанского государственного технического университета: Технические науки, 2016 Aim. The aim of this study is to develop one of the most perspective semiconductor device suitable for creation and improvement of controlled rectifiers, bipolar static induction transistor.Methods.
F. I. Bukashev, A. R. Shakhmaeva
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An Investigation of Reliability and Life Time Prediction for Power MOSFET Using Electronically and Statistical Technique [PDF]
Engineering and Technology Journal, 2013 This work is aimed to estimate the life time of the MOSFET power transistor through an empirical implementation work merged with statistical applications.
Abdul-hasan Abdallah Kadhim +2 more
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High Performance 3.3 kV SiC MOSFET Structure with Built-In MOS-Channel Diode
Energies, 2022 Built-in freewheeling diode metal–oxide–semiconductor field-effect transistors (MOSFETs) that ensure high performance and reliability at high voltages are crucial for chip integration.
Jaeyeop Na, Minju Kim, Kwangsoo Kim
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IEEE Access, 2023 We investigate the impact of power MOSFET channel width on the power efficiency of a switch-mode power supply. With this analysis, we derive a circuit-specific criterion that minimizes the power dissipated by a power MOSFET, which is based on the ratio ...
Vikas Joshi +5 more
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Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures
Micromachines, 2021 This research proposes a novel 4H-SiC power device structure—different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and static ...
Chia-Yuan Chen +4 more
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Revista ElektrónEn marzo de 2026 el Consejo Superior de la Universidad de Buenos Aires aprobó la creación de la Carrera de Especialización en Microelectrónica en modalidad a distancia, dependiente de la Facultad de Ingeniería (FIUBA).
Mariano Garcia Inza +2 more
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Verification of angular dependence in MOSFET detector
Brazilian Journal of Radiation Sciences, 2019 In vivo dosimetry is an essential tool for quality assurance programs, being a procedure commonly performed with thermoluminescent dosimeters (TLDs) or diodes. However, a type of dosimeter that has increasing popularity in recent years is the metal-oxide-
Clayton Henrique de Souza
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Доклады Белорусского государственного университета информатики и радиоэлектроники, 2020 The use of microelectronic products in outer space is possible if protection is provided against special external influencing factors, including radiation effect.
I. Yu. Lovshenko +2 more
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Advanced Materials, EarlyView.The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
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Grafted Low‐Leakage Si/AlN p‐n Diodes Enabled by Fluorinated AlN Interface
Advanced Materials Interfaces, EarlyView.This work demonstrates a fluorination‐based interface engineering strategy that transforms oxygen‐terminated AlN surfaces into fluorine‐terminated interfaces for grafted p‐Si/n‐AlN diodes. By combining pseudo‐ALE oxide removal, XeF2 fluorination, and ultrathin SiNx stabilization, the engineered interface suppresses defect‐assisted reverse leakage by ...
Yi Lu +21 more
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