Results 11 to 20 of about 162,294 (344)
A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon
, 2021 Tunnel field-effect transistors (TFETs) rely on quantum-mechanical tunnelling and, unlike conventional metal–oxide–semiconductor field-effect transistors (MOSFETs), require less than 60 mV of gate voltage swing to induce one order of magnitude variation ...
C. Convertino +6 more
semanticscholar +1 more source
Neuromorphic Devices and Computing for Sensing, Memory, and Control. [PDF]
Adv Sci (Weinh)This review introduces neuromorphic devices made from diverse materials. These devices mimic neuronal functions and architectures and, when integrated with artificial or biological computing, can form closed loops with neurons for pressure, optical, acoustic, and biochemical sensing and modulation.
Zhu Z, Schaffer N, Yang X.
europepmc +2 more sources
Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance [PDF]
, 2004 The vertical MOSFET structure is one of the solutions for reducing the channel length of transistors under 50nm. Surround gates can be easily realised in vertical MOSFETs which offer increased channel width per unit silicon area.
Wang, Y +17 more
core +2 more sources
UMYU Scientifica Journal, 2022 This research focuses on testing and assembling of a microcontroller based smart system suitable for controlling brushless fan that will detect temperature in a room, maintain and adjusts a speed of a cooling fan.
Aliyu Surajo, Sagir Ziya’ulhaq
doaj +1 more source
IEEE transactions on industry applications, 2020 Survivability of silicon-carbide (SiC) mosfet modules during short circuit (SC) is essential for modern power electronics systems due to large economic implications.
S. Mocevic +6 more
semanticscholar +1 more source
IEEE Electron Device Letters, 2021 The trade-off relationship between specific on-resistance and short-circuit withstand time in 1.2 kV 4H-SiC MOSFETs was drastically increased using a novel device structure.
Dongyoung Kim, Woongje Sung
semanticscholar +1 more source
Sensors, 2023 In this article, the performance of n-type junctionless (JL) double-gate (DG) MOSFET-based biosensors with and without gate stack (GS) has been studied. Here, the dielectric modulation (DM) method is applied to detect biomolecules in the cavity.
Dibyendu Chowdhury +7 more
doaj +1 more source
Rectal and Bladder Dose Measurements in the Intracavitary Applications of Cervical Cancer Treatment with HDR Afterloading System: Comparison of TPS Data with MOSFET Detector [PDF]
Journal of Biomedical Physics and Engineering, 2020 Background: Intracavitary brachytherapy plays a major role in management of cervical carcinoma. Assessment of dose received by OAR’s therefore becomes crucial for the estimation of radiation toxicities in HDR brachytherapy.
N Singh +6 more
doaj +1 more source
Advances in Electrical and Electronic Engineering, 2014 In this research, the analysis of statistical variations in subthreshold MOSFET's high frequency characteristics defined in terms of gate capacitance and transition frequency, have been shown and the resulting comprehensive analytical models of such ...
Rawid Banchuin
doaj +1 more source
R&D of 3 300V SiC MOSFET With Embedded SBD
Zhongguo dianli, 2021 In this paper, a 3 300 V silicon carbide(SiC) metal-oxide-semiconductor field effect transistors (MOSFET) with embedded schottky barrier diodes(SBD) is developed, where the traditional MOSFET structure is integrated with a titanium-formed Schottky ...
Guoyou LIU +3 more
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