Results 11 to 20 of about 6,198 (180)

Neuromorphic Devices and Computing for Sensing, Memory, and Control. [PDF]

open access: yesAdv Sci (Weinh)
This review introduces neuromorphic devices made from diverse materials. These devices mimic neuronal functions and architectures and, when integrated with artificial or biological computing, can form closed loops with neurons for pressure, optical, acoustic, and biochemical sensing and modulation.
Zhu Z, Schaffer N, Yang X.
europepmc   +2 more sources

Protection of battery-powered devices against accidental swap of power supply connections.

open access: yesРоссийский технологический журнал, 2022
Objectives. Battery-powered devices (e.g., wireless sensors, pacemakers, watches and other wrist-worn devices, virtual reality glasses, unmanned aerial vehicles, robots, pyrometers, cars, DC/DC converters, etc.) are widely used today.
V. P. Babenko, V. K. Bityukov
doaj   +1 more source

Kontrol Motor Induksi 1 Fasa Menggunakan Raspberry Pi

open access: yesJurnal Teknik Elektro, 2020
Motor induksi paling banyak digunakan pada peralatan industri maupun pada peralatan rumah tangga, karena harganya relatif murah dan perawatannya juga lebih mudah, jika dibandingkan dengan jenis motor lainnya.
Junaidi Asrul   +5 more
doaj   +1 more source

Pengaturan Keseimbangan Pengisian dan Pengosongan Baterai Asam Timbal

open access: yesJurnal Nasional Teknik Elektro, 2016
In this paper proposed a system of balance settings for charging and discharging the lead-acid battery using a microcontroller arduino uno 16U2. The calculation of battery capacity using the method of As (Ampere-second). Before this is done, the value of
Mochammad Rismansyah, Refdinal Nazir
doaj   +1 more source

High-frequency submicrosecond electroporator

open access: yesBiotechnology & Biotechnological Equipment, 2016
In this work, we present a novel electroporator which is capable of generating single and bursts of high power (3 kV, 60 A) square wave pulses of variable duration (100 ns to 1 ms) with predefined repetition frequency (1 Hz to 3.5 MHz).
Vitalij Novickij   +6 more
doaj   +1 more source

Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures

open access: yesNanotechnology Reviews, 2017
The quest for high device density in advanced technology nodes makes strain engineering increasingly difficult in the last few decades. The mechanical strain and performance gain has also started to diminish due to aggressive transistor pitch scaling. In
John Chelliah Cyril R.A.   +1 more
doaj   +1 more source

EXPERIMENTAL MODEL OF SINGLE-PHASE DC–DC BOOST CONVERTER FOR 1000 WP PHOTOVOLTAIC APPLICATION

open access: yesJurnal Ilmiah SINERGI, 2021
The photovoltaic system is used and utilized as electricity demand in many developed countries, including Indonesia. Nowadays, the photovoltaic system is an alternative source of inexpensive, reasonably priced electricity and easily applied in public ...
Handoko Rusiana Iskandar   +3 more
doaj   +1 more source

High Frequency Multipurpose SiC MOSFET Driver

open access: yesAdvances in Electrical and Electronic Engineering, 2021
This article describes a new multipurpose Silicone-Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) driver, which was designed and manufactured for a high frequency operating SiC transistor as a semiconductor switching device of ...
Jan Strossa   +4 more
doaj   +1 more source

Recent research progress of single particle effect of SiC MOSFET

open access: yesHe jishu, 2022
With the rapid development of nuclear energy and space technology, application of high-voltage power devices based on SiC, especially the SiC MOSFET, is increasing. The problems of single event effect (SEE) caused by high-energy particle radiation in the
LIU Cuicui   +6 more
doaj   +1 more source

DEVELOPMENT OF CONTROLLED RECTIFIERS BASED ON THE BIPOLAR WITH STATIC INDUCTION TRANSISTORS (BSIT)

open access: yesВестник Дагестанского государственного технического университета: Технические науки, 2016
Aim. The aim of this study is to develop one of the most perspective semiconductor device suitable for creation and improvement of controlled rectifiers, bipolar static induction transistor.Methods.
F. I. Bukashev, A. R. Shakhmaeva
doaj   +1 more source

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