Results 11 to 20 of about 28,059 (259)
Rectal and Bladder Dose Measurements in the Intracavitary Applications of Cervical Cancer Treatment with HDR Afterloading System: Comparison of TPS Data with MOSFET Detector [PDF]
Journal of Biomedical Physics and Engineering, 2020 Background: Intracavitary brachytherapy plays a major role in management of cervical carcinoma. Assessment of dose received by OAR’s therefore becomes crucial for the estimation of radiation toxicities in HDR brachytherapy.
N Singh +6 more
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R&D of 3 300V SiC MOSFET With Embedded SBD
Zhongguo dianli, 2021 In this paper, a 3 300 V silicon carbide(SiC) metal-oxide-semiconductor field effect transistors (MOSFET) with embedded schottky barrier diodes(SBD) is developed, where the traditional MOSFET structure is integrated with a titanium-formed Schottky ...
Guoyou LIU +3 more
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Protection of battery-powered devices against accidental swap of power supply connections.
Российский технологический журнал, 2022 Objectives. Battery-powered devices (e.g., wireless sensors, pacemakers, watches and other wrist-worn devices, virtual reality glasses, unmanned aerial vehicles, robots, pyrometers, cars, DC/DC converters, etc.) are widely used today.
V. P. Babenko, V. K. Bityukov
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Kontrol Motor Induksi 1 Fasa Menggunakan Raspberry Pi
Jurnal Teknik Elektro, 2020 Motor induksi paling banyak digunakan pada peralatan industri maupun pada peralatan rumah tangga, karena harganya relatif murah dan perawatannya juga lebih mudah, jika dibandingkan dengan jenis motor lainnya.
Junaidi Asrul +5 more
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Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance [PDF]
, 2004 The vertical MOSFET structure is one of the solutions for reducing the channel length of transistors under 50nm. Surround gates can be easily realised in vertical MOSFETs which offer increased channel width per unit silicon area.
Wang, Y +17 more
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Improved sub-threshold Slope in RF vertical MOSFETS using a frame gate architecture [PDF]
, 2008 We report a CMOS-compatible vertical MOSFET, which incorporates a frame gate architecture suitable for application in RF circuits. Fabricated surround gate vertical MOSFETs with the frame gate architecture show no degradation of short channel effects ...
Tan, L. +13 more
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Advances in Electrical and Electronic Engineering, 2014 In this research, the analysis of statistical variations in subthreshold MOSFET's high frequency characteristics defined in terms of gate capacitance and transition frequency, have been shown and the resulting comprehensive analytical models of such ...
Rawid Banchuin
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EXPERIMENTAL MODEL OF SINGLE-PHASE DC–DC BOOST CONVERTER FOR 1000 WP PHOTOVOLTAIC APPLICATION
Jurnal Ilmiah SINERGI, 2021 The photovoltaic system is used and utilized as electricity demand in many developed countries, including Indonesia. Nowadays, the photovoltaic system is an alternative source of inexpensive, reasonably priced electricity and easily applied in public ...
Handoko Rusiana Iskandar +3 more
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High Frequency Multipurpose SiC MOSFET Driver
Advances in Electrical and Electronic Engineering, 2021 This article describes a new multipurpose Silicone-Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) driver, which was designed and manufactured for a high frequency operating SiC transistor as a semiconductor switching device of ...
Jan Strossa +4 more
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Pengaturan Keseimbangan Pengisian dan Pengosongan Baterai Asam Timbal
Jurnal Nasional Teknik Elektro, 2016 In this paper proposed a system of balance settings for charging and discharging the lead-acid battery using a microcontroller arduino uno 16U2. The calculation of battery capacity using the method of As (Ampere-second). Before this is done, the value of
Mochammad Rismansyah, Refdinal Nazir
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