Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures
Nanotechnology Reviews, 2017 The quest for high device density in advanced technology nodes makes strain engineering increasingly difficult in the last few decades. The mechanical strain and performance gain has also started to diminish due to aggressive transistor pitch scaling. In
John Chelliah Cyril R.A. +1 more
doaj +1 more source
Nanoscale MOSFET as a Potential Room-Temperature Quantum Current Source
Micromachines, 2020 Nanoscale metal-oxide-semiconductor field-effect-transistors (MOSFETs) with only one defect at the interface can potentially become a single electron turnstile linking frequency and electronic charge to realize the elusive quantized current source ...
Kin P. Cheung +2 more
doaj +1 more source
Efficient 3D `atomistic' simulation technique for studying of random dopant induced threshold voltage lowering and fluctuations in decanano MOSFETs [PDF]
, 1998 A 3D `atomistic' simulation technique to study random dopant induced threshold voltage lowering and fluctuations in sub 0.1 μm MOSFETs is presented.
Asenov, A.
core +1 more source
DEVELOPMENT OF CONTROLLED RECTIFIERS BASED ON THE BIPOLAR WITH STATIC INDUCTION TRANSISTORS (BSIT)
Вестник Дагестанского государственного технического университета: Технические науки, 2016 Aim. The aim of this study is to develop one of the most perspective semiconductor device suitable for creation and improvement of controlled rectifiers, bipolar static induction transistor.Methods.
F. I. Bukashev, A. R. Shakhmaeva
doaj +1 more source
High Performance 3.3 kV SiC MOSFET Structure with Built-In MOS-Channel Diode
Energies, 2022 Built-in freewheeling diode metal–oxide–semiconductor field-effect transistors (MOSFETs) that ensure high performance and reliability at high voltages are crucial for chip integration.
Jaeyeop Na, Minju Kim, Kwangsoo Kim
doaj +1 more source
Microwave Irradiation Effects on Random Telegraph Signal in a MOSFET
, 2006 We report on the change of the characteristic times of the random telegraph signal (RTS) in a MOSFET operated under microwave irradiation up to 40 GHz as the microwave field power is raised.
Alessandro Calderoni +16 more
core +1 more source
An Investigation of Reliability and Life Time Prediction for Power MOSFET Using Electronically and Statistical Technique [PDF]
Engineering and Technology Journal, 2013 This work is aimed to estimate the life time of the MOSFET power transistor through an empirical implementation work merged with statistical applications.
Abdul-hasan Abdallah Kadhim +2 more
doaj +1 more source
A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region
Energies, 2021 A 1.2 kV SiC MOSFET with an integrated heterojunction diode and p-shield region (IHP-MOSFET) was proposed and compared to a conventional SiC MOSFET (C-MOSFET) using numerical TCAD simulation.
Jongwoon Yoon, Jaeyeop Na, Kwangsoo Kim
doaj +1 more source
Measuring Charge Transport in an Amorphous Semiconductor Using Charge Sensing
, 2009 We measure charge transport in hydrogenated amorphous silicon (a-Si:H) using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances.
Agarwal S. C. +20 more
core +1 more source
IEEE Access, 2023 We investigate the impact of power MOSFET channel width on the power efficiency of a switch-mode power supply. With this analysis, we derive a circuit-specific criterion that minimizes the power dissipated by a power MOSFET, which is based on the ratio ...
Vikas Joshi +5 more
doaj +1 more source