Results 61 to 70 of about 77,589 (241)

Asymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications

Energies, 2021
4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with embedded Schottky barrier diodes are widely known to improve switching energy loss by reducing reverse recovery characteristics.
Kyuhyun Cha, Kwangsoo Kim
doaj   +1 more source

Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories

Advanced Materials Interfaces, EarlyView.
This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley   +1 more source

Characterization and Design Framework for Micro‐ and Nanoscale Printed Metal Interconnects in Hybrid Electronic Systems

Advanced Materials Technologies, EarlyView.
This work establishes a framework for high‐resolution printed interconnects by coupling e‐jet printing control, multilayer deposition, and sintering optimization. Ink properties and printing speed influence particle stacking, while different sintering atmospheres drive distinct microstructural evolution.
Kaifan Yue, Siddharth Kurup, Rebecca Banner, Calib Lanier, Eric Vogel, Michael Filler, Kira Barton   +6 more
wiley   +1 more source

Study on Single-event Gate Rupture Mechanism of Asymmetric-trench SiC MOSFET

Yuanzineng kexue jishu
The demand for kilovolt-level radiation-hardened SiC devices in modern spacecraft is urgent. To provide a theoretical basis for the hardening design of SiC MOSFETs against single-event gate rupture (SEGR), a study on the single-event effects of 1 200 V ...
WANG Lihao1, 2, DONG Tao2, FANG Xingyu2, QI Xiaowei2, WANG Liang2, CHEN Miao2, ZHANG Xing1, ZHAO Yuanfu2
doaj   +1 more source

Smart Closed‐Loop Systems in Personalized Healthcare: Advances and Outlook

Advanced Materials Technologies, EarlyView.
A smart closed‐loop e‐textile integrates multimodal sensing, onboard processing, wireless communication, and wearable power to enable real‐time physiological/biochemical monitoring and feedback‐controlled therapy. ABSTRACT Smart textiles represent a revolutionary frontier in healthcare, seamlessly blending fabric and advanced technologies to create ...
Safoora Khosravi, Sang Won Lee, Mohammad Abrar Uddin, Sina Hassanpoor, Neha Suvindran, Katherine Le, Harun Arkaz, Harishkumar Narayana, Saeid Soltanian, Danial Khorsandi, Negar Hosseinzadeh Kouchehbaghi, Taeil Kim, Yangzhi Zhu   +12 more
wiley   +1 more source

Constant and switched bias low frequency noise in p-MOSFETs with varying gate oxide thickness [PDF]

, 2002
The low-frequency noise power spectral density of MOSFETs is decreased if the MOSFETs are periodically switched 'off' (switched bias conditions). The influence of the gate oxide thickness on fixed bias and switched biased low frequency drain current ...
Knitel, M.J., Kolhatkar, J.S., Salm, C., Wallinga, H.   +3 more
core   +2 more sources

Modular, Textile‐Based Soft Robotic Grippers for Agricultural Produce Handling

Advanced Robotics Research, EarlyView.
This article introduces textile‐based pneumatic grippers that transform simple textiles into robust bending actuators. Detailed experiments uncover how cut geometry and fabric selection shape performance. Successful handling of fragile agricultural items showcases the potential of textile robotics for safe, scalable automation in food processing and ...
Zeyu Hou, Eran Beeri Bamani, Joao Buzzatto, Bryan Busby, Lucas Ferrari Gerez   +4 more
wiley   +1 more source

Continuous-wave and Transient Characteristics of Phosphorene Microwave Transistors

, 2016
Few-layer phosphorene MOSFETs with 0.3-um-long gate and 15-nm-thick Al2O3 gate insulator was found to exhibit a forward-current cutoff frequency of 2 GHz and a maximum oscillation frequency of 8 GHz after de-embedding for the parasitic capacitance ...
Du, Yuchen, Hwang, James C. M., Luo, Xi, Xiong, Kuanchen, Ye, PeiDe   +4 more
core   +1 more source

Exploiting the dynamic properties of FET-based chemical sensors [PDF]

, 1989
After a long period of mainly static application of ISFETS, other more sophisticated applications are being developed, based on the exploitation of the dynamic properties of ISFETS. Examples are the use of flow-through cells with sample injection and the
Bergveld, P.
core   +3 more sources

Self‐Assisted Charge Storage‐Release Mechanism Enabling Flexible Design of Biomimetic Triboelectric Nanogenerators

Advanced Science, EarlyView.
Inspired by the mimosa, this study develops a flexible triboelectric nanogenerator with a novel microneedle array and battery‐mimetic architecture. The device introduces a spontaneous charge self‐regulation mechanism that confines the electric field below the air breakdown threshold, and achieves an outstanding charge density of 396.50 µC m−2 ...
Hanpeng Gao, Yamin Hu, Li Li, Ana Sofia Oliveira Henriques Moita, Xi Wang, Zong Meng, Zhiwu Han, Yan Liu   +7 more
wiley   +1 more source