Results 61 to 70 of about 162,294 (344)
IEEE Access, 2023 This work proposes a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT-MOSFET) device architecture suitable for power conversion applications.
Nilesh Kumar Jaiswal, V. N. Ramakrishnan
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Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors
Advanced Science, EarlyView.This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung +7 more
wiley +1 more source
Japanese Journal of Applied Physics, 2019 We present a vertical GaN planar metal-oxide-semiconductor field-effect transistor (MOSFET) fabricated by an all ion implantation process. The fabricated MOSFET shows an on-resistance of 2.78 mΩ cm2 and a breakdown voltage of 1200 V, by applying the ...
R. Tanaka +4 more
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SN Applied Sciences, 2023 Linearity analysis of nanoscale devices is a vital issue as nonlinearity behavior is exhibited by them when employed in circuits for microwave and RF applications.
Sarita Misra +3 more
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Advanced Science, EarlyView.As CMOS technology approaches fundamental energy limits, new paradigms for low‐power information processing are required. Magnetic systems are attractive for their spin transport, yet current‐induced magnetization control is energy inefficient. Multiferroic heterostructures enable energy‐efficient electric field manipulation of magnetism.
Donghyeon Lee +3 more
wiley +1 more source
Study on Single-event Gate Rupture Mechanism of Asymmetric-trench SiC MOSFET
Yuanzineng kexue jishuThe demand for kilovolt-level radiation-hardened SiC devices in modern spacecraft is urgent. To provide a theoretical basis for the hardening design of SiC MOSFETs against single-event gate rupture (SEGR), a study on the single-event effects of 1 200 V ...
WANG Lihao1, 2, DONG Tao2, FANG Xingyu2, QI Xiaowei2, WANG Liang2, CHEN Miao2, ZHANG Xing1, ZHAO Yuanfu2
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Advanced Science, EarlyView.A proof‐of‐concept multifunctional capsule robot integrates diagnostic imaging, magnetic navigation, wireless power transfer, and targeted thermotherapy for gastrointestinal applications. Magnetically guided positioning and stable wireless power enable localized thermal ablation, achieving controlled heating and high cell mortality in vitro.
Heng Zhang +7 more
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Probabilistic Computing via Gate‐Tunable Random Telegraph Noise
Advanced Science, EarlyView.Intrinsic random telegraph noise in metal–oxide–semiconductor field‐effect transistors is harnessed to create gate‐tunable probabilistic bits. By modulating carrier‐trapping dynamics, the device produces stochastic binary outputs with a continuous bias‐to‐probability transfer.
Gyungwon Yun +8 more
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Re‐Thinking Electronic Circuit Design Through Emerging Reconfigurable Field Effect Transistors
Advanced Science, EarlyView.Graphical illustration of reconfigurable field effect transistor (RFET) operation modes, including n‐type, p‐type, and ambipolar transport, as well as their areas of application discussed in this review: digital circuit design, analog circuit design, post‐Shannon computing, and sensing. ABSTRACT Reconfigurable field‐effect transistors, short RFETs, are
Jens Trommer +19 more
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Suspended Gate Silicon Nanodots memory
, 2008 This paper proposes a new non-volatile semiconductor memory which features a suspended gate integrated with silicon nanocrystals dots as a floating gate and the MOSFET as a readout. Performing three-dimensional finite element simulations combined with an
Mizuta, Hiroshi +3 more
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