Results 81 to 90 of about 28,059 (259)
Small, EarlyView.We present a van der Waals FeNC‐FET that simultaneously achieves sub‐60 mV/dec steep switching and non‐volatile memory within a single transistor. A CIPS/h‐BN/α‐In2Se3 bi‐ferroelectric gate stack enables a stabilized negative‐capacitance state in FE1 while maintaining the bistable polarization of FE2.
Sangmin Lee +5 more
wiley +1 more source
Improvement of Mosfet Characteristics [PDF]
, 1990 By inclusion of a semi-dielectric layer, a novel MOSFET Structure, the T-MOSFET, and its integrated circuit version are presented. Both for the enhancement mode and the depletion mode, equivalent circuit models are developed.
Ranbir Singh
core +1 more source
Electrical engineering & ElectromechanicsIntroduction. Most electromagnetic compatibility studies carried out in the context of power switch research are generally valid for low frequencies. This frequency restriction appears to be too restrictive for a complete analysis of the electromagnetic ...
M. E. Lahlaci, M. Miloudi, H. Miloudi
doaj +1 more source
An Innovative Approach to Multi‐Valued Logic
IEEJ Transactions on Electrical and Electronic Engineering, EarlyView.The current generation of computer systems operates on the principles of binary logic, which encompasses both logical and arithmetic operations. However, silicon technology has reached its peak performance, prompting researchers to explore alternative methods for enhancing computational efficiency. One such method is the adoption of Multi‐Valued Logic (
Ali Mokhtari, Peyman Kabiri
wiley +1 more source
AI‐enabled bumpless transfer control strategy for legged robot with hybrid energy storage system
CAAI Transactions on Intelligence Technology, EarlyView.Abstract Designing Hybrid energy storage system (HESS) for a legged robot is significant to improve the motion performance and energy efficiency of the robot. However, switching between the driving mode and regenerative braking mode in the HESS may generate a torque bump, which has brought significant challenges to the stability of the robot locomotion.
Zhiwu Huang +6 more
wiley +1 more source
, 2003 The vertical MOSFET structure is one of the solutions for reducing the channel length of devices under 50nm. Surround gate structures can be realised which offer improved short channel effects and more channel with per unit silicon area. In this paper, a
Uchino, T +6 more
core
Comparison of Dielectric Recovery After Arc Burning in SF6 Gas and Its Potential Alternatives
High Voltage, EarlyView.ABSTRACT Although sulphur hexafluoride (SF6) exhibits exceptional insulating properties, it is a potent greenhouse gas. Therefore, studying alternatives to SF6 is critical for developing environmentally friendly high‐voltage electrical equipment.
Ziqi Liu +4 more
wiley +1 more source
Suspended Gate Silicon Nanodots memory
, 2008 This paper proposes a new non-volatile semiconductor memory which features a suspended gate integrated with silicon nanocrystals dots as a floating gate and the MOSFET as a readout. Performing three-dimensional finite element simulations combined with an
Mizuta, Hiroshi +3 more
core
Evaluation of Silicone Carbide Mosfet Driving Circuit Performance
The performances of different driving circuits configurations designed for silicon carbide MOSFET transistors are compared in this research. The simulation of the double-pulse test (DPT) was performed with the use of three driving circuit configurations.
Veronika Švárna, Michal Frivaldsky
core +1 more source
Modeling of Power Module for 48 V High Power Inverter [PDF]
Informacije MIDEM, 2021 T. Skuber, A. Sešek, J. Trontelj
doaj +1 more source