Results 81 to 90 of about 162,294 (344)

Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation

open access: yesSensors, 2017
A power MOSFET linearizer is proposed for a high-voltage power amplifier (HVPA) used in high-frequency pulse-echo instrumentation. The power MOSFET linearizer is composed of a DC bias-controlled series power MOSFET shunt with parallel inductors and ...
Hojong Choi   +3 more
doaj   +1 more source

Organic Electrochemical Transistors for Energy‐Autonomous Bioelectronics: Materials, Devices, and System Integration

open access: yesAdvanced Electronic Materials, EarlyView.
This review surveys organic electrochemical transistors as core building blocks for energy‐autonomous bio‐integrated electronics. We outline device physics, OMIEC materials, and electrolyte effects that enable sub‐volt, high‐gain operation, and discuss direct coupling with mechanical, thermal, and optical energy harvesters to realize battery‐free ...
Jonggeun Park   +3 more
wiley   +1 more source

High mobility III-V MOSFETs for RF and digital applications [PDF]

open access: yes, 2007
Developments over the last 15 years in the areas of materials and devices have finally delivered competitive III-V MOSFETs with high mobility channels. This paper briefly reviews the above developments, discusses properties of the GdGaO/Ga2O3 MOS systems,
Kalna, K.   +39 more
core   +1 more source

Self‐Driving Laboratory Optimizes the Lower Critical Solution Temperature of Thermoresponsive Polymers

open access: yesAdvanced Intelligent Discovery, EarlyView.
A low‐cost, self‐driving laboratory is developed to democratize autonomous materials discovery. Using this "frugal twin" hardware architecture with Bayesian optimization, the platform rapidly converges to target lower critical solution temperature (LCST) values while self‐correcting from off‐target experiments, demonstrating an accessible route to data‐
Guoyue Xu, Renzheng Zhang, Tengfei Luo
wiley   +1 more source

A Novel 4H‐SiC MOSFET With High‐K/Low‐K Dielectric for Improved Frequency Characteristics

open access: yesIET Power Electronics
Split‐Gate MOSFET (SG‐MOSFET) is promising in power‐switching circuits due to the fast turn‐on/off speed and low switching loss. However, in higher‐frequency applications, the gate architecture needs to be changed to obtain the improved high‐frequency ...
Jiaxing Chen, Juntao Li, Lin Zhang
doaj   +1 more source

Temperature‐Tunable Cholesteric Liquid Crystal Optical Combiners for Extended Reality Applications

open access: yesAdvanced Intelligent Systems, Volume 7, Issue 3, March 2025.
Recent advancements in extended reality highlight their potential to enhance traditional displays like liquid crystal displays and organic light‐emitting diode screens. This article introduces an innovative cholesteric liquid crystal‐based optical combiner for head‐mounted displays, enabling seamless transitions between augmented reality, virtual ...
Yuanjie Xia   +6 more
wiley   +1 more source

Electrostatically Doped DSL Schottky Barrier MOSFET on SOI for Low Power Applications

open access: yesIEEE Journal of the Electron Devices Society, 2018
In this paper, we propose and simulate a novel Schottky barrier MOSFET (SB-MOSFET) with improved performance in comparison to the conventional SB-MOSFET. The proposed device employs charge plasma/electrostatic doping-based dopant segregation layers (DSLs)
Faisal Bashir   +2 more
doaj   +1 more source

A Generalizable Framework for Building Executable Domain‐Specific Large Language Models Under Data Scarcity: Demonstration on Semiconductor Technology Computer‐Aided Design Simulation

open access: yesAdvanced Intelligent Systems, EarlyView.
A schema‐first alignment framework builds compact, executable domain‐specific language models under data scarcity. Large‐scale synthetic question‐answer generation instills domain knowledge, and a code‐centric IR‐to‐DPO pipeline aligns generation with tool‐executable syntax.
Di Wang   +4 more
wiley   +1 more source

Comprehensive study of a 4H-SiC MES-MOSFET

open access: yes, 2015
In this paper, we studied the enhancement of the breakdown voltage in the 4H–SiC MESFET–MOSFET (MES–MOSFET) structure which we have proposed in our previous work.
Mahabadi, Jamali   +3 more
core   +1 more source

Analysis of the impact of the drain-junction tunneling effect on a microwave MOSFET from S-parameter measurements [PDF]

open access: yes, 2009
A procedure to analyze the effect of the MOSFET drain-bulk junction tunneling current at high frequencies is presented. This procedure allows identifying the presence of band-to-band tunneling in short channel-length MOSFETs at different drain-to-source ...
EMMANUEL TORRES RIOS   +2 more
core   +1 more source

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