Results 81 to 90 of about 77,589 (241)

A Novel 4H‐SiC MOSFET With High‐K/Low‐K Dielectric for Improved Frequency Characteristics

IET Power Electronics
Split‐Gate MOSFET (SG‐MOSFET) is promising in power‐switching circuits due to the fast turn‐on/off speed and low switching loss. However, in higher‐frequency applications, the gate architecture needs to be changed to obtain the improved high‐frequency ...
Jiaxing Chen, Juntao Li, Lin Zhang
doaj   +1 more source

High Mobility (>200 cm2 V−1 s−1) Transparent Top Gate IGZO TFTs with Oxidized Metal Gate Insulator for Enhanced Conductivity

Advanced Electronic Materials, EarlyView.
We demonstrate a top gate Nb capping TFT architecture that induces controlled oxygen out‐diffusion from the IGZO channel. This mechanism generates shallow donor states and enhances electron delocalization, enabling extended percolation pathways. The resulting thin‐film transistors exhibit high mobility, suppressed leakage currents, and strong optical ...
Hyeonjeong Sun, Yeoeun Yun, Kyubin Hwang, Jiyoung Bang, Seungmin Choi, Seungjae Lee, Taeyang Kim, Suhwon Choi, Eunsuk Choi, Jae Kyeong Jeong, Seung‐Beck Lee   +10 more
wiley   +1 more source

A Low-Voltage Electronically Tunable MOSFET-C Voltage-Mode First-Order All-Pass Filter Design [PDF]

, 2013
This paper presents a simple electronically tunable voltage-mode first-order all-pass filter realization with MOSFET-C technique. In comparison to the classical MOSFET-C filter circuits that employ active elements including large number of transistors ...
Cicekoglu, O., Herencsar, N., Metin, B.
core   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

Advanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt   +4 more
wiley   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Electrostatically Doped DSL Schottky Barrier MOSFET on SOI for Low Power Applications

IEEE Journal of the Electron Devices Society, 2018
In this paper, we propose and simulate a novel Schottky barrier MOSFET (SB-MOSFET) with improved performance in comparison to the conventional SB-MOSFET. The proposed device employs charge plasma/electrostatic doping-based dopant segregation layers (DSLs)
Faisal Bashir, Abdullah G. Alharbi, Sajad A. Loan   +2 more
doaj   +1 more source

A magnetically isolated gate driver for high-speed voltage sharing in series-connected MOSFETs [PDF]

, 2011
A scalable resonant gate drive circuit is described, suitable for driving series-connected MOSFETs in high-voltage, high-speed inverter applications for resistive and capacitive loads.
Anthony, Philip, Grant, Duncan, Hearn, George, Holliday, Derrick, McNeill, Neville   +4 more
core  

Quantum Transport in a Nanosize Silicon-on-Insulator Metal-Oxide-Semiconductor

, 2003
An approach is developed for the determination of the current flowing through a nanosize silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET).
B. Sorée, Balaban S. N., Bordone P., Castella F., Frank D. J., J. T. Devreese, Keldysh L. V., Keldysh L. V., Lundstrom M., M. D. Croitoru, Pokatilov E. P., Prange R. E., V. M. Fomin, V. N. Gladilin, W. Magnus, W. Schoenmaker   +15 more
core   +1 more source

Lateral Profile of Doping Concentration Extracted From the C‐V Characteristics in Self‐Aligned Top‐Gate Coplanar InGaZnO Thin‐Film Transistors

Advanced Electronic Materials, EarlyView.
For self‐aligned top‐gate amorphous InGaZnO thin‐film transistors (TFTs), a capacitance‐voltage‐based extraction technique that directly reconstructs a lateral doping profile and key parameters is proposed. The extracted profiles are validated by direct comparison with the transfer‐length method.
Seung Joo Myoung, Chang Il Ryoo, Jingyu Park, Dong Hyeop Shin, Su Han Noh, Sae Him Jung, Soohong Eo, Wonjung Kim, Sung Jun Yun, Jae Moon Soh, Yoo Seok Park, Changwook Kim, Dong Myong Kim, Sung‐Jin Choi, Yoon Jung Lee, Ickhyun Song, Dae Hwan Kim   +16 more
wiley   +1 more source

Experimental electromagnetic compatibility of conducted electromagnetic interferences from an IGBT and a MOSFET in the power supply

Electrical engineering & Electromechanics
Introduction. Most electromagnetic compatibility studies carried out in the context of power switch research are generally valid for low frequencies. This frequency restriction appears to be too restrictive for a complete analysis of the electromagnetic ...
M. E. Lahlaci, M. Miloudi, H. Miloudi
doaj   +1 more source