Results 81 to 90 of about 6,053 (208)
From Doping to Polarity Control: Transport Switching in Silicon Nanowire Field‐Effect Transistors
physica status solidi (a), Volume 223, Issue 15, 5 August 2026.Junctionless nanowire transistors (JNTs) based on phosphorus‐doped silicon demonstrate electrostatic polarity control, ambipolar and unipolar modes, and scalable short‐channel performance. Tunable gate configurations and doping levels enable high on/off ratios and CMOS compatibility, highlighting JNTs as promising candidates for reconfigurable, next ...
Sayantan Ghosh +7 more
wiley +1 more source
Device-Circuit Level Simulation Study of Three Inputs Complex Logic Gate Designed Using Nano-MOSFETs
Applications of Modelling and Simulation, 2019 Simulation study on silicon-based nano-MOSFETs logic circuits is needed to add more knowledge on the nanoscale circuit performance. Therefore, in this paper, simulation study is carried out on three inputs complex logic gate transistor circuits with four
Ooi Chek Yee
doaj
physica status solidi (a), Volume 223, Issue 15, 5 August 2026.A flexible digital bolus dosimeter platform is proposed to address the challenges of surface‐dose monitoring. The study evaluates point‐dose performance using an IDE substrate and extends this to spatial dose distributions using an fPCB‐integrated 24‐pixel array.
Moo‐Jae Han +7 more
wiley +1 more source
MicromachinesThe performance of the Si MOSFET is suppressed when the channel loses its control through the gate. This paper introduces a new and novel high-channel conducting orthogonally oriented selective buried triple gate vertical power MOSFET technology to study
M. Ejaz Aslam Lodhi +4 more
doaj +1 more source
A Module‐Level Photovoltaic Optimizer for Online I–V Curve Tracing and Daylight Photoluminescence
Advanced Sustainable Systems, Volume 10, Issue 8, August 2026.This article presents a module‐level photovoltaic optimizer based on a synchronous buck converter. The system enables non‐invasive online I–V curve tracing and daylight photoluminescence imaging. By integrating advanced diagnostic capabilities with minimal hardware modifications, this compact solution offers cost‐effective, continuous inspection ...
Alberto Redondo‐Plaza +5 more
wiley +1 more source
The Evolution of Semiconductor Devices: From Transistors to Quantum and Neuromorphic Computing
physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 8, August 2026.This review presents the evolution of semiconductor devices from BJTs to fin field‐effect transistors (FinFETs), nanowire, and carbon nanotube transistors. It highlights emerging materials, including SiC and GaN, and examines neuromorphic and quantum computing, industry applications, performance benchmarks, challenges, and future directions.
Manoharan Subramanian +6 more
wiley +1 more source
Nanophotonics, Volume 15, Issue 14, 27 July 2026.Here, we experimentally demonstrate the effect of cooperative strong coupling to improve the electron mobility of an organic semiconductor. This is achieved by strong coupling between a highly absorbing organic dye and an organic semiconductor in a MOSFET cavity configuration. Our findings suggest the flexibility of applying cooperative strong coupling
Kuljeet Kaur +3 more
wiley +1 more source
Effects of design parameter on power handling capability of RF SOI switch
Dianzi Jishu YingyongThe effects of design parameter on power handling capability of radio-frequency silicon-on-insulator (RF SOI) switch were comprehensively investigated in this work, including the width of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) under ...
Liu Zhangli
doaj +1 more source
Discover Applied SciencesIn current article, an analytical model of a Triple-Material Dielectric-Pocket Gate-All-Around (TM-DP-GAA) MOSFET has been presented for elevated temperature conditions. The numerical model of surface potential has been developed for temperatures ranging
Neeraj Gupta +4 more
doaj +1 more source