Results 101 to 110 of about 28,059 (259)
High-frequency performance of Schottky source/drain silicon pMOS devices [PDF]
, 2008 A radio-frequency performance of 85-nm gate-length p-type Schottky barrier (SB) with PtSi source/drain materials is investigated. The impact of silicidation annealing temperature on the high-frequency behavior of SB MOSFETs is analyzed using an extrinsic
Snyder, J. +6 more
core +1 more source
Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.In this research, a simple and scalable strategy for protection of a few‐layer black phosphorus (FLBP) with a cellulose nitrate‐based material is presented. The FLBP is structurally and morphologically characterized. The FLBP stability with and without nitrocellulose protection is monitored by interferometric method, surface profile examination, and ...
Paweł Jakóbczyk +8 more
wiley +1 more source
Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories
Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley +1 more source
Advanced Materials Technologies, Volume 11, Issue 11, 5 June 2026.This work establishes a framework for high‐resolution printed interconnects by coupling e‐jet printing control, multilayer deposition, and sintering optimization. Ink properties and printing speed influence particle stacking, while different sintering atmospheres drive distinct microstructural evolution.
Kaifan Yue +6 more
wiley +1 more source
Active and Passive Electronic Components, 2011 We propose a high-temperature-operation (HTOT) SOI MOSFET and show preliminary simulation results of its characteristics. It is demonstrated that HTOT SOI MOSFET operates safely at 700 K with no thermal instability because of its expanded effective ...
Yasuhisa Omura
doaj +1 more source
Smart Closed‐Loop Systems in Personalized Healthcare: Advances and Outlook
Advanced Materials Technologies, Volume 11, Issue 12, 18 June 2026.A smart closed‐loop e‐textile integrates multimodal sensing, onboard processing, wireless communication, and wearable power to enable real‐time physiological/biochemical monitoring and feedback‐controlled therapy. ABSTRACT Smart textiles represent a revolutionary frontier in healthcare, seamlessly blending fabric and advanced technologies to create ...
Safoora Khosravi +12 more
wiley +1 more source
Dual-Gate Mosfet Static Characteristics Generated for Mixing Applications [PDF]
, 1970 The static electrical characteristics of dual-gate silicon n-channel insulated-gate field-effect trapsistors are investigated experimentally. A mathematical model based on theoretical expressions and containing twelve parameters adjusted for.
Zimmermann, Detlef
core
Self-heating effect modeling of a carbon nanotube-based fieldeffect transistor (CNTFET) [PDF]
Journal of Optoelectronical Nanostructures, 2019 We present the design and simulation of a single-walled carbon nanotube(SWCNT)-based field-effect transistor (FET) using Silvaco TCAD. In this paper, theself-heating effect modeling of the CNT MOSFET structure is performed and comparedwith conventional ...
Kazem Pourchitsaz +1 more
doaj
Advanced Science, Volume 13, Issue 34, 19 June 2026.Inspired by the mimosa, this study develops a flexible triboelectric nanogenerator with a novel microneedle array and battery‐mimetic architecture. The device introduces a spontaneous charge self‐regulation mechanism that confines the electric field below the air breakdown threshold, and achieves an outstanding charge density of 396.50 µC m−2 ...
Hanpeng Gao +7 more
wiley +1 more source
Fabrication of High‐Density Multimodal Neural Probes Based on Heterogeneously Integrated CMOS
Advanced Science, Volume 13, Issue 34, 19 June 2026.A chiplet‐based methodology democratizes active neural probe development on standard bulk CMOS services. This yields the first probe combining high‐density electrophysiology (416 electrodes) with calcium imaging (832 photodiodes) and complete on‐chip signal processing across 13 shanks.
Ju Hee Mun +10 more
wiley +1 more source