Results 151 to 160 of about 162,294 (344)

The suspended-gate MOSFET (SG-MOSFET): A modeling outlook for the design of RF MEMS switches and tunable capacitors

This paper reports on the modeling and key design aspects of an innovative MEMS device: the suspended-gate MOSFET (SG-MOSFET). Based on the coupled-electromechanical equations describing the suspended gate actuation, we present the investigation of the ...
Pott, V., Dobrescu, D., Declercq, M., Hibert, C., Renaud, Philippe, Racine, G. A., Fritschi, R., Dobrescu, L., Ionescu, A. M., Rusu, A., Flückiger, Ph.   +10 more
core   +1 more source

Process and Characterization of Strained Silicon MOSFET Incorporating Dielectric Pocket (SDP-MOSFET)

, 2011
In this paper, we propose a fabrication process of Strained Silicon MOSFET incorporating Dielectric Pocket (SDP-MOSFET). By employing TCAD tools, a systematic process simulation in realizing the SDP-MOSFET structure is done successfully.
Idris, Muhammad Idzdihar, Hamzah, Rostam Affendi, Mohammed Napiah, Zul Atfyi Fauzan, Mohd Said, Muzalifah, Ali, Nur Alisa, Abdul Hamid, Afifah Maheran   +5 more
core   +1 more source

Research on High-power Full SiC Converter

机车电传动, 2018
In order to adapt to the development trend of high frequency and high power density of converter products, the application of high-power all-SiC-MOSFET device in converter was studied.
ZHANG Qing, ZHANG Xiaoyong, RAO Peinan, SHI Hongliang, ZHAO Mingrui, ZHOU Shuai   +5 more
doaj  

Maximum likelihood Weibull analysis of repetitive short-circuit stress in asymmetrical trench SiC MOSFETs [PDF]

Krisztián Kovács, Michal Minárik, Jozef Kozárik, Martin Weis, Juraj Marek   +4 more
openalex   +1 more source

适合于PSPICE的一种精确的功率MOSFET等效电路

, 1996
建立了一种新的功率MOSFET等效电路,以便利用先进的电路模拟软件PSPICE对功率MOSFET所有特性进行模拟和分析。对IR公司的各类HEXFET进行的模拟结果与其数据手册中的实验曲线十分吻合 ...
周宝霞, 王守觉, 陈治明
core  

Study of n-Channel 4H-SiC MOSFETs with a High-<i>k</i>/SiO₂ Stacked Gate Dielectric and a p⁺-Polysilicon Gate. [PDF]

Micromachines (Basel)
Lin Z, Cheng N, Cai W, Hu J, Hu S.
europepmc   +1 more source

The Trench Power MOSFET: Part I—History, Technology, and Prospects

IEEE Transactions on Electron Devices, 2017
Richard K. Williams, M. Darwish, R. Blanchard, R. Siemieniec, P. Rutter, Y. Kawaguchi   +5 more
semanticscholar   +1 more source

Reliability prediction of ESD and electro-thermal degradation in SiC MOSFETS for energy storage [PDF]

Jianrun Chen, Denghui Li, Sida Cheng, Xinrui Zhao, Y Andrew Xi, Lei Ma, Tailong Shi, Zhen Zhu, Litao Sun, Hua Hong   +9 more
openalex   +1 more source

THE SIC-BASED MOSFET AVERAGE TEMPERATURE DETERMINATION C ONSIDERING TRAPPING P HENOMENA

Martin Florovič
openalex   +1 more source

The MOSFET Transistor: characteristics and applications in modern electronics and emerging technologies

openNel contesto della società moderna l'evoluzione tecnologica ha preso una direzione che ha visto le componenti elettroniche emergere non più come semplici invenzioni destinate a migliorare la qualità dei prodotti commerciali, ma come elementi ...
RIOLMI ROSSETTO, DANIELE
core