Results 201 to 210 of about 157,312 (300)
Research on Single-Event Effect Hardening Method of Transverse Split-Gate Trench Metal-Oxide-Semiconductor Field-Effect Transistors. [PDF]
Micromachines (Basel)Bao M, Wang Y, Yang J, Li X.
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Research on the Short-Circuit Characteristics of Trench-Type SiC Power MOSFETs Under Single and Repetitive Pulse Strikes. [PDF]
Micromachines (Basel)Liu L, Pang B, Li S, Zhen Y, Li G.
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Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET. [PDF]
Nanomaterials (Basel)Yu M, Shen Y, Ma H, Zhang Q.
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Defect-Mediated Threshold Voltage Tuning in β-Ga<sub>2</sub>O<sub>3</sub> MOSFETs via Fluorine Plasma Treatment. [PDF]
Nanomaterials (Basel)Wang L +8 more
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Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules
IEEE Transactions on Power Electronics, 2019The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC) mosfets have the potential to replace Si insulated gate bipolar transistors (IGBTs) in medium-/low-voltage and high-power applications.
Lei Zhang, Xibo Yuan, Xiaojie Wu
exaly +2 more sources
20-kW Zero-Voltage-Switching SiC-mosfet Grid Inverter With 300 kHz Switching Frequency
IEEE Transactions on Power Electronics, 2019Although SiC-mosfet has significant advantages on switching performance over traditional Si-IGBT, the switching loss of SiC-mosfet devices at hard switching rises quickly with the increment in the switching frequency.
Ning He, Min Chen, Nan Zhu
exaly +2 more sources
IEEE Electron Device Letters, 2020
A novel planar gate SiC MOSFET embedding low barrier diode (LBD-MOSFET) with improved third quadrant and switching performance is proposed and characterized in this letter.
Xiaochuan Deng, Xiaojie Xu, Chenzhan Li
exaly +2 more sources
A novel planar gate SiC MOSFET embedding low barrier diode (LBD-MOSFET) with improved third quadrant and switching performance is proposed and characterized in this letter.
Xiaochuan Deng, Xiaojie Xu, Chenzhan Li
exaly +2 more sources