Results 241 to 250 of about 162,294 (344)

Multi-Objective Optimization for Through-Silicon via Structure Considering Thermomechanical Reliability and Electrical Performance. [PDF]

Micromachines (Basel)
Chen S, Hu W, Xue S, Zhang Q, Mu J, Liu S, Wu W, Diwu D, Wang C.   +8 more
europepmc   +1 more source

Multi-Resistant Staphylococcus aureus Growth Inhibition Using an Innovative High Voltage Nanosecond Pulser: In Vitro Experimental Results. [PDF]

Microbiologyopen
Balasis S, Papageorgiou K, Georgiou S, Kolonitsiou F, Giormezis N, Kyriakopoulos A, Oikonomou C, Papageorgiou GF.   +7 more
europepmc   +1 more source

Mobility of Carriers in Strong Inversion Layers Associated with Threshold Voltage for Gated Transistors. [PDF]

Micromachines (Basel)
Yang HC, Chi SC, Huang BH, Lai TC, Yang HY.   +4 more
europepmc   +1 more source

ANALISIS DAN SIMULASI PENGENDALIAN SISTEM LAMPU KENDARAAN MENGGUNAKAN MOSFET DAN OPTOCOUPLER PC817 SECARA DIGITAL

Darwinto Darwinto, Yoddy Agung Nuhgraha, Agus Saleh, Nia Ekawati, Muhammad Hifni Abdulaziz   +4 more
openalex   +2 more sources

Quasi-Vertical GaN-Based Trench Gate MOSFETs Treated with Fluorine-Plasma. [PDF]

Micromachines (Basel)
Zhang P, Li DY, Xu JR, Chang QY, Hou B, Xi H, Ma XH.   +6 more
europepmc   +1 more source

Temperature-Dependent Reverse-Recovery Behavior Analysis and Circuit-Level Mitigation of Superjunction MOSFETs. [PDF]

Micromachines (Basel)
Cui W, Liao P, Wang Y, Guo J, Yang Y, Zhang DW, Xu H.   +6 more
europepmc   +1 more source

Suppression of short channel effects by the LDD structure in 4H-SiC n-MOSFETs up to 500 ℃ environments

Kota Shimizu, Kosuke Muraoka, Akinori Takeyama, Takeshi Ohshima, Kazutoshi Kojima, Yasunori Tanaka, Shin-Ichiro Kuroki   +6 more
openalex   +1 more source

A Review of Reliability and Failure Mechanisms of SiC MOSFETs and GaN HEMTs in High-Power-Density Power Electronic Systems

Chenyao Li
openalex   +1 more source

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Active Gate Driver for Improving Current Sharing Performance of Paralleled High-Power SiC MOSFET Modules

IEEE Transactions on Power Electronics, 2021
Featuring higher switching speed and lower losses, the silicon carbide MOSFETs (SiC MOSFETs) are widely used in higher power density and higher efficiency power electronic applications as a new solution.
Yuan Yang, Wen Yang
exaly   +2 more sources