Results 261 to 270 of about 162,294 (344)

A Novel SiC MOSFET Embedding Low Barrier Diode With Enhanced Third Quadrant and Switching Performance

IEEE Electron Device Letters, 2020
A novel planar gate SiC MOSFET embedding low barrier diode (LBD-MOSFET) with improved third quadrant and switching performance is proposed and characterized in this letter.
Xiao-Chuan Deng, Xiao-Jie Xu, Xuan Li, Xu Li, Yi Wen, Wan-Jun Chen   +5 more
semanticscholar   +1 more source

A Fast Overcurrent Protection IC for SiC MOSFET Based on Current Detection

IEEE transactions on power electronics
This letter proposes a fast overcurrent protection integrated circuit (IC) for silicon carbide (SiC) mosfet based on current detection. With the proposed protection IC, the voltage between the Kelvin source and power source of SiC mosfet is sensed ...
Qiang Li, Yuan Yang, Yang Wen, Xue Tian, Ya-Lan Li, Wei Xiang   +5 more
semanticscholar   +1 more source

A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules

IEEE transactions on power electronics, 2019
Featuring higher switching speed and lower losses, the silicon carbide mosfets (SiC mosfets) are widely used in higher power density and higher efficiency power electronic applications as a new solution.
Yuan Yang, Yang Wen, Yong Gao
semanticscholar   +1 more source

Simulation of MOSFET as horizontal magnetic mosfet (MAGFET)

2017 2nd International Conference on Frontiers of Sensors Technologies (ICFST), 2017
This work proposes the regular long channel MOSFET structure used as magnetic MOSFET (MOSFET that can detect magnetic field) in parallel direction (y-axis). The structure is regular MOSFET that has drain, gate, source and substrate (body). The mechanism of device is Hall effect in current mode between channel MOSFET current and substrate current in x ...
Rattapong Nakachai, Toempong Phetchakul, Sawatdipong Poonsawat, Amporn Poyai   +3 more
openaire   +1 more source

On the Linearization of MOSFET Capacitors

2007 IEEE International Symposium on Circuits and Systems (ISCAS), 2007
In this paper, a heuristic methodology for design of highly linear MOSFET capacitors (MOSCAPs) has been presented. For a certain amount of accessible chip area, the proposed algorithm intends to find the structure which has the least C-V variation. It uses a modified version of the genetic programming to optimize the capacitor topology and transistors'
Mohammad Danaie, Hamed Aminzadeh, Sasan Naseh   +2 more
openaire   +1 more source

Achieving Zero Switching Loss in Silicon Carbide MOSFET

IEEE transactions on power electronics, 2019
Due to the unipolar conduction mechanism, the switching loss of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (mosfet) is reduced significantly when compared with silicon insulated gate bipolar transistor (IGBT).
Xuan Li, Xu Li, Peng-Kun Liu, Su-Xuan Guo, Liqi Zhang, Alex Q. Huang, Xiao-Chuan Deng, Bo Zhang   +7 more
semanticscholar   +1 more source

Distortion analysis of MOSFETS for application in MOSFET-C circuits

ISCAS '98. Proceedings of the 1998 IEEE International Symposium on Circuits and Systems (Cat. No.98CH36187), 2002
The aim of this paper is to provide some guidelines on the design of MOS V-I converters. An explicit formula for the harmonic distortion based on an analytic model of the MOSFET has been derived for any inversion level. Experimental results for the distortion in the MOSFET V-I characteristics as well as biasing and tuning strategies applied to MOSFET-C
M.C. Schneider, C. Galup-Montoro, S.M. Acosta, A.I.A. Cunha   +3 more
openaire   +1 more source

A Non-Segmented PSpice Model of SiC mosfet With Temperature-Dependent Parameters

IEEE transactions on power electronics, 2019
A non-segmented PSpice model of silicon carbide metal-oxide semiconductor field effect transistor (SiC mosfet) with temperature-dependent parameters is proposed in this paper, which can improve the model's convergence and temperature characteristics. The
Hong Li, Xingran Zhao, K. Sun, Zheng-Ming Zhao, Guoen Cao, Trillion Q. Zheng   +5 more
semanticscholar   +1 more source

Designing of Graphene Based MOSFET and Comparison of it with Generalized MOSFET

2018 International Conference on Circuits and Systems in Digital Enterprise Technology (ICCSDET), 2018
Graphene is semi-metal and an allotrope of carbon. It is emerging material in field of electronics and nanotechnology. In this paper, designing of MOSFET with graphene material and its analysis is done. The aim of this work is to compare DC characteristics, breakdown characteristics and small signal analysis of graphene based MOSFET with generalized ...
Anant H. Gambhir, Deepashree M. Bhalerao
openaire   +1 more source

???????????????????????? MOSFET-???????????????????????? ?? ?????????????????? ?????????????????????? ???????????????? ?????? ???????????????????????????? ??????????????

2014
?????????????? SMD-1 ?????????????????? ?????????????????????????? ?????????????? ?? ???????????????????????? ?????????????????????? ???????????????????????? ?? ???????????????????????? ???? ?????????????? ?????????????????????????? ?? ????????????????????.
ZHU HUILONG, XU MIAO, LIANG QINGQING
openaire   +3 more sources