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2D analytical modeling and simulation of dual material DG MOSFET for biosensing application
AEU - International Journal of Electronics and Communications, 2019In the recent times, the performance of MOSFET in the nanoscaled region attains improvisations through several alternative device structures. Amongst many advanced MOSFET structures, the Double Gate (DG) MOSFET is one such structure which mitigates short
B. Buvaneswari, N. Balamurugan
semanticscholar +1 more source
IEEE transactions on power electronics, 2018
Because of fast switching speeds and inevitable stray parameters, the efficiency, security, and stability properties of SiC mosfets in practice are challenged by voltage and current ringing and overshoot. In this paper, the turn-on and off behavior of an
Zheng Zeng, Xiao-Ling Li
semanticscholar +1 more source
Because of fast switching speeds and inevitable stray parameters, the efficiency, security, and stability properties of SiC mosfets in practice are challenged by voltage and current ringing and overshoot. In this paper, the turn-on and off behavior of an
Zheng Zeng, Xiao-Ling Li
semanticscholar +1 more source
Assessment of 10 kV, 100 A Silicon Carbide mosfet Power Modules
IEEE transactions on power electronics, 2018This paper presents a thorough characterization of 10 kV SiC mosfet power modules, equipped with third-generation mosfet chips and without external free-wheeling diodes, using the inherent SiC mosfet body-diode instead. The static performance (e.g., IDS–
D. Johannesson, M. Nawaz, Kalle Ilves
semanticscholar +1 more source
Advancement and challenges in MOSFET scaling
, 2021R. K. Ratnesh +6 more
semanticscholar +1 more source
Electric and Hybrid Vehicle Technology International, 2019
A new technology that uses chip embedding of power MOSFETs in PCBs can meet increasing requirements for electrical power management systems
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A new technology that uses chip embedding of power MOSFETs in PCBs can meet increasing requirements for electrical power management systems
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2007
This chapter presents an overview of power metal oxide semiconductor field effect transistor (MOSFET). One of the main contributions that led to the growth of the power electronics field has been the unprecedented advancement in the semiconductor technology, especially with respect to switching speed and power handling capabilities.
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This chapter presents an overview of power metal oxide semiconductor field effect transistor (MOSFET). One of the main contributions that led to the growth of the power electronics field has been the unprecedented advancement in the semiconductor technology, especially with respect to switching speed and power handling capabilities.
openaire +3 more sources
1991
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is the most widely used SOI device. The present chapter is devoted to single-gate SOI MOSFETs. Other types of SOI MOSFETs devices, such as multiple-gate SOI MOSFETs, dynamic-threshold MOSFETs, power MOS devices, etc., will be described in Chapter 6.
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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is the most widely used SOI device. The present chapter is devoted to single-gate SOI MOSFETs. Other types of SOI MOSFETs devices, such as multiple-gate SOI MOSFETs, dynamic-threshold MOSFETs, power MOS devices, etc., will be described in Chapter 6.
openaire +1 more source