Results 251 to 260 of about 162,294 (344)

FinFET-a Self-Aligned Double-Gate MOSFET Scalable to 20 nm

IEEE Transactions on Electron Devices, 2000
Jeffrey Bokor, Chenming Hu, Tsu-Jae King Liu   +2 more
exaly   +2 more sources

Online Junction Temperature Measurement for SiC MOSFET Based on Dynamic Threshold Voltage Extraction

IEEE transactions on power electronics, 2021
The online junction temperature monitoring of power devices is a viable technique to ensure the reliable operation of mission-critical power electronic converters.
Xi Jiang, Jun Wang, Hengyu Yu, Jian-Jun Chen, Zhong Zeng, Xin Yang, Z. Shen   +6 more
semanticscholar   +1 more source

The limitation of the Split-Gate MOSFET(SG-MOSFET) at 3.3kV

2021 International Conference on Electronics, Information, and Communication (ICEIC), 2021
Split Gate MOSFET (SG-MOSFET) is one of the effective way to lower the gate-drain capacitance (C GD ). However, the applicability of 3.3 kV SiC MOSFET has not been studied yet. In this paper, comparative study of 3.3 kV 4H-SiC SG-MOSFET was confirmed by TCAD simulation compared with conventional MOSFET (C-MOSFET).
Kyuhyun Cha, Jongwoon Yoon, Jinhee Cheon, Kwangsoo Kim   +3 more
openaire   +2 more sources

A review on performance comparison of advanced MOSFET structures below 45 nm technology node

Journal of Semiconductors, 2020
CMOS technology is one of the most frequently used technologies in the semiconductor industry as it can be successfully integrated with ICs. Every two years the number of MOS transistors doubles because the size of the MOSFET is reduced.
Namrata Mendiratta, S. Tripathi
semanticscholar   +1 more source

The A-MOSFET—A majority carrier accumulation MOSFET

Solid-State Electronics, 1982
Abstract A novel MOSFET device structure is proposed that operates on the principle of majority carrier accumulation in the channel. The basic current equation is obtained for an n-channel structure.
Pierre E. Schmidt, Mukunda B. Das, Paul D. Esqueda   +2 more
openaire   +1 more source

Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

IEEE transactions on power electronics, 2019
The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC) mosfets have the potential to replace Si insulated gate bipolar transistors (IGBTs) in medium-/low-voltage and high-power applications.
Lei Zhang, Xi-Bo Yuan, Xiaojie Wu, Congcong Shi, Jiahang Zhang, Yong-Lei Zhang   +5 more
semanticscholar   +1 more source

A SiC MOSFET and Si IGBT Hybrid Modular Multilevel Converter With Specialized Modulation Scheme

IEEE transactions on power electronics, 2020
The utilization of silicon carbide (SiC) MOSFET instead of silicon (Si) IGBT can significantly improve the performance of many converters. However, a modular multilevel converter (MMC) completely based on the SiC MOSFET suffers from high cost and high ...
Tian-Xiang Yin, Chen-Xing Xu, Lei Lin, Kaiyuan Jing   +3 more
semanticscholar   +1 more source

Practical Design Considerations for a Si IGBT + SiC MOSFET Hybrid Switch: Parasitic Interconnect Influences, Cost, and Current Ratio Optimization

IEEE transactions on power electronics, 2019
In this paper, a hybrid switch (HyS) consisting of a large current rated Si insulated-gate bipolar transistor (IGBT) device connected in parallel with a small current rated SiC MOSFET device (low SiC/Si current ratio below unity) is proposed for high ...
Amol Deshpande, F. Luo
semanticscholar   +1 more source

20-kW Zero-Voltage-Switching SiC-mosfet Grid Inverter With 300 kHz Switching Frequency

IEEE transactions on power electronics, 2019
Although SiC-mosfet has significant advantages on switching performance over traditional Si-IGBT, the switching loss of SiC-mosfet devices at hard switching rises quickly with the increment in the switching frequency.
Ning He, M. Chen, Jun-Xiong Wu, Nan Zhu, Dehong Xu   +4 more
semanticscholar   +1 more source

Investigation on Degradation of 1200-V Planar and Trench SiC MOSFET Under Surge Current Stress of Body Diode

IEEE Transactions on Electron Devices
When silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) operate in the third quadrant, the surge current under extreme operating conditions hinders the body diode from replacing the external SiC Schottky barrier diode (SBD)
Xinbin Zhan, Yan-Jing He, Jiankun Lai, Hao Yuan, Qingwen Song, Xiaoyan Tang, Xiaowu Gong, Yu-Ming Zhang   +7 more
semanticscholar   +1 more source