Results 141 to 150 of about 20,503 (202)
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Fabrication of nanostructures using MBE and MOVPE
Physica Scripta, 1994Two different fabrication techniques to obtain nanometer scale structures without the use of lithography are demonstrated. Quantum dots are made on GaAs by growing strained InP islands by metal-organic vapour phase epitaxy. Quantum confinement of carriers is achieved by the growth of quantum wells on the InP islands.
Ahopelto, Jouni +7 more
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MOVPE of AlAsSb using tritertiarybutylaluminum
Journal of Crystal Growth, 1998Abstract We investigated the growth of AlAs 0.16 Sb 0.84 by using tritertiarybutylaluminum (TTBAl), tertiarybutylarsine (TBAs) and triethylantimony (TESb) as precursors. AlAs 0.16 Sb 0.84 layers, which are lattice-matched to InAs substrates, are used as cladding layers for Sb-based IR-lasers.
Ch Giesen, M.M Beerbom, X.G Xu, K Heime
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physica status solidi (b), 2010
AbstractGaAs nanowire (NW) growth was studied by metal‐organic vapour phase epitaxy (MOVPE). The vapour–liquid–solid (VLS) mechanism with gold‐based alloy particles and the selective‐area growth (SAG) mechanism on electron beam lithographically prepared SiNx/GaAs mask structures were applied.
Jens Bauer +3 more
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AbstractGaAs nanowire (NW) growth was studied by metal‐organic vapour phase epitaxy (MOVPE). The vapour–liquid–solid (VLS) mechanism with gold‐based alloy particles and the selective‐area growth (SAG) mechanism on electron beam lithographically prepared SiNx/GaAs mask structures were applied.
Jens Bauer +3 more
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SPIE Proceedings, 2006
ABSTRACT The drive towards improved target recognition has led to an increasing interest in detection in more than one infrared band. Many groups have demonstrated two-color detection, typically by employing two back-to-back junctions, one for each color.
L. G. Hipwood +6 more
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ABSTRACT The drive towards improved target recognition has led to an increasing interest in detection in more than one infrared band. Many groups have demonstrated two-color detection, typically by employing two back-to-back junctions, one for each color.
L. G. Hipwood +6 more
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2010
In this chapter, growth mechanism of GaN and AlGaN by MOVPE is described in detail. The parasitic reaction that generates particulates in vapor phase is the most probable limiting factor of maximum growth rate of GaN and AlGaN. Both experimental and quantum chemical study of vapor phase reaction between organo-metals and ammonia is described.
K. Matsumoto +10 more
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In this chapter, growth mechanism of GaN and AlGaN by MOVPE is described in detail. The parasitic reaction that generates particulates in vapor phase is the most probable limiting factor of maximum growth rate of GaN and AlGaN. Both experimental and quantum chemical study of vapor phase reaction between organo-metals and ammonia is described.
K. Matsumoto +10 more
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MOVPE grown quantum cascade lasers
Physica E: Low-dimensional Systems and Nanostructures, 2004Abstract We report the metal-organic vapour phase epitaxy growth of quantum cascade lasers (QCLs) in both the GaAs–AlGaAs and InGaAs–AlInAs–InP materials systems. The GaAs based sample shows an increased emission wavelength relative to an equivalent design grown by molecular beam epitaxy, which we attribute to interfacial grading in the metal-organic
Richard Green +8 more
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Journal of Crystal Growth, 1985
Abstract The MOVPE growth technique is shown to be useful for growing high quality layers of the ternary II–VI alloy Cd x Zn 1− x S (0 ⩽ x ⩽ 1) on to GaAS (100) and (111), and GaP (100) oriented substrates. The layers were grown in a horizontal reactor at atmospheric pressure, over the temperature range 200 to 500°C using dimethyl cadmium and ...
P.J. Wright, B. Cockayne, A.J. Williams
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Abstract The MOVPE growth technique is shown to be useful for growing high quality layers of the ternary II–VI alloy Cd x Zn 1− x S (0 ⩽ x ⩽ 1) on to GaAS (100) and (111), and GaP (100) oriented substrates. The layers were grown in a horizontal reactor at atmospheric pressure, over the temperature range 200 to 500°C using dimethyl cadmium and ...
P.J. Wright, B. Cockayne, A.J. Williams
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SPIE Proceedings, 2009
Challenges for the MOVPE growth of LED heterostructures for emission in the UV-A and UV-B spectral range are discussed. Special attention is given to the effects of strain in the In(Al)GaN active region as well as in the complete layer stack. Here in-situ monitoring of wafer bowing is shown to be an important tool for optimization of the growth ...
Arne Knauer +7 more
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Challenges for the MOVPE growth of LED heterostructures for emission in the UV-A and UV-B spectral range are discussed. Special attention is given to the effects of strain in the In(Al)GaN active region as well as in the complete layer stack. Here in-situ monitoring of wafer bowing is shown to be an important tool for optimization of the growth ...
Arne Knauer +7 more
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Selective area growth with MOVPE
Proceedings of 8th International Conference on Indium Phosphide and Related Materials, 2002Devices for optoelectronic and photonic applications are of growing interest for future optical networks. These devices commonly require the integration of at least one active section like laser, amplifier, modulator etc. with passive sections like low loss interconnection waveguides, etc..
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Large-scale MOVPE production systems
Microelectronic Engineering, 1992Abstract High-performance ICs and OEICs rely on complex epitaxial heterostructures with tight bandgap engineering. Related development and production require homogeneous material, manufacturing of batches of comparable wafers, in-situ multiwafer fabrication, reduced surface contamination and defect density along with proven heterostructure processes ...
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