Results 11 to 20 of about 20,503 (202)

Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High-Temperature-Resistant Single-Crystal Aluminum Nitride (0001). [PDF]

Adv Sci (Weinh)
High‐temperature‐resistant single crystals of aluminum nitride works best for multilayer hexagonal boron nitride (hBN) epitaxy and annealing on large‐area dielectric wafers, promising for large‐scale integration and device applications of hBN. Abstract The epitaxy of high‐quality hexagonal boron nitride (hBN) multilayers on dielectric wafers is ...
Yang X, Pristovsek M, Nitta S, Honda Y, Ohtake A, Sakuma Y, Hiroto T, Ishida T, Ikezawa M, Guo Q, Amano H.   +10 more
europepmc   +2 more sources

Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer

Nanotechnology, 2021
InAs quantum dots (QDs) are grown on an In0.53Ga0.47As interlayer and embedded in an InP(100) matrix. They are fabricated via droplet epitaxy (DE) in a metal organic vapor phase epitaxy (MOVPE) reactor.
Dr. Elisa Maddalena Sala, M. Godsland, Young In Na, A. Trapalis, J. Heffernan   +4 more
semanticscholar   +1 more source

Enhanced GaN Decomposition at MOVPE Pressures [PDF]

MRS Internet Journal of Nitride Semiconductor Research, 1998
GaN decomposition was studied above 800 °C in flowing H2 and N2 for pressures ranging from 10 to 700 torr. From careful weighings of the GaN film on sapphire before and after annealing, the rates for GaN decomposition, Ga surface accumulation, and Ga desorption were obtained.
D.D. Koleske, A.E. Wickenden, R.L. Henry, M.E. Twigg, J.C. Culbertson, R.J. Gorman   +5 more
openaire   +1 more source

Unusual nanostructures of "lattice matched" InP on AlInAs [PDF]

, 2014
We show that the morphology of the initial monolayers of InP on Al0.48In0.52As grown by metalorganic vapor-phase epitaxy does not follow the expected layer-by-layer growth mode of lattice-matched systems, but instead develops a number of low-dimensional ...
Dimastrodonato, V., Gocalinska, A., Joyce, B. A., Juska, G., Manganaro, M., Pelucchi, E., Thomas, K., Vvedensky, D. D., Zhang, J.   +8 more
core   +2 more sources

GaSb heterostructures grown by MOVPE

Journal of Crystal Growth, 1988
GaSb based heterostructures have been grown with a varying degree of strain in the GaSb layer as a result of the lattice mismatch. The GaSb/Ga1−xAlxSb system has ⩽0.65% mismatch making it potentially attractive for epitaxial growth. However, both the crystallinity and electrical quality of MOVPE grown Ga1−xAlxSb were found to be limited by carbon ...
Chidley, E, Haywood, S, Mallard, R, Mason, N, Nicholas, R, Walker, P, Warburton, R   +6 more
openaire   +2 more sources

MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality [PDF]

, 2018
We present the effect of miscut angle of SiC substrates on N-polar AlN growth. The N-polar AlN layers were grown on C-face 4H-SiC substrates with a miscut towards 〈 1 ¯ 1 0 0 〉 by metal-organic vapor phase epitaxy (MOVPE).
J. Lemettinen, H. Okumura, Iurii Kim, C. Kauppinen, Tomas Palacios, Sami Suihkonen   +5 more
semanticscholar   +1 more source

Growth of GaSb by MOVPE

Semiconductor Science and Technology, 1988
High-quality homo- and hetero-epitaxial GaSb has been grown from TMGa and TMSb using atmospheric pressure metal-organic vapour-phase epitaxy (MOVPE). Unintentionally doped material was p-type. At 295 K it had a carrier concentration of around 3.0*1016 cm-3 and a corresponding Hall mobility in the range of 670 to 1000 cm2 V-1 s-1. Growth parameters were
Haywood, S, Henriques, A, Mason, N, Nicholas, R, Walker, P   +4 more
openaire   +1 more source

Spectroscopic characterization of 1.3µm GaInNAs quantum-well structures grown by metal-organic vapor phase epitaxy [PDF]

, 2005
We report optical studies of high-quality 1.3 μm strain-compensated GaInNAs/GaAs single-quantum-well structures grown by metalorganic vapor phase epitaxy.
Calvez, S., Clark, A.H., Dawson, M.D., Kim, K.S., Kim, T., Park, Y.J., Qiu, Y.N., Rorison, J.M., Sun, H.D.   +8 more
core   +1 more source

Characterization of hole traps in MOVPE-grown p-type GaN layers using low-frequency capacitance deep-level transient spectroscopy

Japanese Journal of Applied Physics, 2019
Traps in MOVPE-grown Mg-doped GaN samples composed of p+/p−/n+ structures were investigated using low-frequency capacitance deep-level transient spectroscopy (DLTS). A drop-off in capacitance with decreasing temperature was observed.
T. Kogiso, T. Narita, Hikaru Yoshida, Y. Tokuda, K. Tomita, T. Kachi   +5 more
semanticscholar   +1 more source

Time-Resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window [PDF]

, 2008
The dynamic response of InAsP quantum dots grown on InP(001) substrates by low-pressure Metalorganic Vapor Phase Epitaxy emitting around 1.55 $\mu$m, is investigated by means of time-resolved microphotoluminescence as a function of temperature.
Beaudoin, Gregoire, Beveratos, Alexios, Gogneau, Noelle, Hostein, Richard, Marzin, Jean-Yves, Michon, Adrien, Patriache, Gilles, Robert-Philip, Isabelle, Sagnes, Isabelle   +8 more
core   +2 more sources