Results 21 to 30 of about 20,503 (202)

Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics [PDF]

, 2012
An n(++)-GaAs/p(++)-AlGaAs tunnel junction with a peak current density of 10 100Acm(-2) is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current ...
, Algora C, Algora C, Bedair S M Roberts J C Jung D, Bertness K A Friedman D J Olson J M, Bett A W Burger B Dimroth F Siefer G Lerchenmüller H, C Algora, Chiu P Wojtczuk S Zhang X Harris C Pulver D Timmons M, I García, I Rey-Stolle, Jandieri K, King R R, Sze S M, Álvarez J L Hernández M Benítez P Miñano J C   +13 more
core   +2 more sources

MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC [PDF]

, 2018
We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al -polar AlN on 4H-SiC with 4° miscut using constant growth parameters. At a high temperature of 1165 °C, N-polar AlN layers had high crystalline quality whereas
J. Lemettinen, H. Okumura, I. Kim, M. Rudziński, J. Grzonka, T. Palacios, S. Suihkonen   +6 more
semanticscholar   +1 more source

Structural investigation of MOVPE-Grown GaAs on Ge by X-ray techniques [PDF]

, 2012
The selection of appropriate characterisation methodologies is vital for analysing and comprehending the sources of defects and their influence on the properties of heteroepitaxially grown III-V layers.
B Galiana, C S Wong, Galiana B Volz K Rey-Stolle I Stolz W Algora C, Hertzberg R W, Hull D, J M Molina-Aldareguia, King R R, M Benedicto, N S Bennett, Neumann D A, P J McNally, P Tejedor, Ringel S A Sieg R M Ting S M Fitzgerald E A, Wheeldon J F, Xu S S   +14 more
core   +1 more source

Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE

Scientific Reports, 2017
Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress toward these technological requirements, 1~2.5 µm-thick BN layers were grown on 2-inch sapphire ...
Xin Li, M. Jordan, Taha Ayari, S. Sundaram, Y. El Gmili, S. Alam, M. Alam, G. Patriarche, P. Voss, Jean Paul Salvestrini, A. Ougazzaden   +10 more
semanticscholar   +1 more source

Epitaxial designs for maximizing efficiency in resonant tunnelling diode based terahertz emitters [PDF]

, 2018
We discuss the modelling of high current density InGaAs/AlAs/InP resonant tunneling diodes to maximize their efficiency as THz emitters. A figure of merit which contributes to the wall plug efficiency, the intrinsic resonator efficiency, is used for the ...
Baba, Răzvan, Hogg, Richard A., Mukai, Toshikazu, Stevens, Benjamin J.   +3 more
core   +1 more source

Multi-technique characterisation of MOVPE-grown GaAs on Si [PDF]

, 2010
The heterogeneous integration of III-V materials on a Si CMOS platform offers tremendous prospects for future high speed and low power logic applications. That said this integration generates immense scientific and technological challenges.
Benedicto, M., Bennett, N.S., Cherkaoui, K., Galiana, B., Hurley, P.K., McNally, Patrick J., Molina-Aldareguia, J.M., Monaghan, S., Tejedor, P., Wong, Chiu Soon   +9 more
core   +1 more source

Synthesis and systematic optical investigation of selective area droplet epitaxy of InAs/InP quantum dots assisted by block copolymer lithography [PDF]

, 2018
We report on the systematic investigation of the optical properties of a selectively grown quantum dot gain material assisted by block-copolymer lithography for potential applications in active optical devices operating in the wavelength range around 1 ...
Aldmal, Kristoffer, Ciostek, Czcibor, Holewa, Pawel, Lebedkina, Elizaveta, Ndoni, Sokol, Semenova, Elizaveta, Shikin, Artem, Syperek, Marcin, Yvind, Kresten   +8 more
core   +2 more sources

AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment

, 2010
We present in this work a simple Quantum Well (QW) structure consisting of GaAs wells with AlGaAs barriers as a probe for measuring the performance of arsine purifiers within a MetalOrganic Vapour Phase Epitaxy system.
Atlasov, Baier, Bastard, Cao, Chua, Chui, Dupuis, E. Pelucchi, Esser, Eytan, Feng, Funke, Gallo, Giannoules, Grosse, Gurioli, L.O. Mereni, Leu, Levy, Meier, Merano, Mereni, Moret, Pelucchi, Pelucchi, R.J. Young, Richter, Roberts, Ropers, Rudra, Sanvitto, Savona, Shinohara, Sirigu, Troccoli, V. Dimastrodonato, van der Ziel, Zhu, Zimmermann   +38 more
core   +1 more source

Coherently coupled photonic-crystal surface-emitting laser array [PDF]

, 2015
The realization of a 1 × 2 coherently coupled photonic crystal surface emitting laser array is reported.
Babazadeh, Nasser, Childs, David T.D., Crombie, Alex J., Hogg, Richard A., Ivanov, Pavlo, Khamas, Salam, Li, Guangrui, Sarma, Jayanta, Stevens, Ben J., Taylor, Richard J.E., Ternent, Gary, Thoms, Stephen, Zhou, Haiping   +12 more
core   +1 more source

MOVPE gets green signal

III-Vs Review, 1998
AbstractGetter purified nitrogen carrier gas has become well established for LP-MOVPE in the last three years. With green nitrogen bottles (or a liquid nitrogen source) gradually replacing red hydrogen bottles in MOVPE laboratories, this article highlights the history and development of the new process and demonstrates its suitability for the growth of
Hardtdegen, Hilde, Giannolés, Paulos
openaire   +1 more source