Results 31 to 40 of about 20,503 (202)
GaSb/InAs heterojunctions grown by MOVPE
Journal of Crystal Growth, 1991 Abstract We have previously reported the MOVPE growth of a GaSb/InAs heterojunction containing a two-dimensional electron gas (2DEG) in the InAs [1]. A major improvement in the electrical quality of InAs layers has subsequently resulted from the use of tertiarybutylarsine (TBAs) as the arsenic source.
Haywood, S +4 more
openaire +2 more sources
, 2005 The microstructural and morphological properties of homoepitaxial (001)ZnTe layers are investigated by x-ray diffuse scattering. High resolution reciprocal space maps recorded close to the ZnTe (004) Bragg peak show different diffuse scattering features.
Adachi M. +13 more
core +1 more source
Effect of multilayer barriers on the optical properties of GaInNAs single quantum-well structures grown by metalorganic vapor phase epitaxy [PDF]
, 2005 We report on the effects of combined strain-compensating and strain-mediating layers of various widths on the optical properties of 1.3 μm GaInNAs∕GaAs single quantum well structures grown by metalorganic vapor phase epitaxy (MOVPE).
Calvez, S. +6 more
core +1 more source
Detailed models of the MOVPE process
Journal of Crystal Growth, 1991 Abstract We present physicochemical models of the MOVPE process that describe two- and three-dimensional transport phenomena as well as gas-phase and surface reactions underlying the growth of compound semiconductors. Emphasis is placed on understanding the development of fully three-dimensional flows and on the interaction between transport and ...
Jensen, K. F. +2 more
openaire +2 more sources
Surface organization of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy
, 2012 We present a systematic study of the morphology of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy which are imaged with ex situ atomic force microscopy.
Gocalinska, A. +3 more
core +1 more source
Laser &Photonics Reviews, EarlyView.A heterogeneous III‐V/SiN platform for lasers at 800 nm is realized using the micro‐transfer printing method. Efficient GaAs gain sections are directly butt‐coupled to SiN waveguides, enabling continuous‐wave and mode‐locked extended‐cavity lasers. The mode‐locked lasers generate highly stable pulse trains with repetition rates up to 9.2 GHz and a ...
Max Kiewiet +13 more
wiley +1 more source
Small, EarlyView.This review focuses on capability of Gallium Nitride (GaN)‐based supercapacitors, bordering the advancement from porous architecture to novel hybrid nanostructures. It systematically investigates synthesis approaches and charge storage mechanisms that generate remarkable energy densities and competent cyclic stability.
Farasat Haider +7 more
wiley +1 more source
Growth parameters of InAs/GaAs quantum dots grown by MOVPE [PDF]
, 2006 Quantum dots are zero dimensional structures and therefore have superior transport and optical properties compared to either 2-dimensional or 3-dimensional structures.
Lim, Kheng Boo +3 more
core
Illumination and annealing characteristics of two-dimensional electron gas systems in metal-organic vapor-phase epitaxy grown AlGaN/AlN/GaN heterostructures [PDF]
, 2006 We studied the persistent photoconductivity (PPC) effect in AlGaN/AlN/GaN heterostructures with two different Al-compositions (x=0.15 and x=0.25). The two-dimensional electron gas formed at the AlN/GaN heterointerface was characterized by Shubnikov-de ...
H. Morkoç +6 more
core +3 more sources
Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures
physica status solidi (a), Volume 223, Issue 7, 7 April 2026.The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu +2 more
wiley +1 more source