Results 51 to 60 of about 20,503 (202)
Advanced Materials Interfaces, Volume 13, Issue 4, 17 February 2026.Micro‐Laue diffraction and excited optical X‐ray luminescence are used to study InGaN/GaN core‐shell wires on the BM32 beamline at the European Synchrotron. Multimodal imaging of X‐ray fluorescence, deviatoric strain tensors and optical emissions is performed using simultaneous mapping.
Beatriz de Goes Foschiani +5 more
wiley +1 more source
Local Environment of Ferromagnetically Ordered Mn in Epitaxial InMnAs
, 2004 The magnetic properties of the ferromagnetic semiconductor In0.98Mn0.02As were characterized by x-ray absorption spectroscopy and x-ray magnetic circular dichroism. The Mn exhibits an atomic-like L2,3 absorption spectrum that indicates that the 3d states
B. W. Wessels +5 more
core +1 more source
Indium segregation during III-V quantum wire and quantum dot formation on patterned substrates [PDF]
, 2015 We report a model for metalorganic vapor-phase epitaxy on non-planar substrates, specifically V-grooves and pyramidal recesses, which we apply to the growth of InGaAs nanostructures. This model, based on a set of coupled reaction-diffusion equations, one
Chung, Tung-Hsun +6 more
core +2 more sources
Using Bayesian Optimization to Increase the Efficiency of III‐V Multijunction Solar Cells
Advanced Theory and Simulations, Volume 9, Issue 2, February 2026.Technology Computer Aided Design (TCAD) modeling is crucial for designing complex optoelectronic devices like III‐V multijunction solar cells. Bayesian optimization is proposed as a robust method to address challenges in optimizing costly black‐box TCAD solvers.
Pablo F. Palacios, Carlos Algora
wiley +1 more source
, 2002 In1-xMnxAs diluted magnetic semiconductor (DMS) thin films have been grown using metalorganic vapor phase epitaxy (MOVPE). Tricarbonyl(methylcyclopentadienyl)manganese was used as the Mn source.
A. J. Blattner +19 more
core +1 more source
Phonons in Single‐Domain κ‐Ga2O3 Studied by Polarization Angle‐Resolved Raman Scattering
Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.Single‐domain κ‐Ga2O3 is systematically studied using advanced Raman spectroscopy, revealing over 100 Raman‐active phonon modes. These modes are compared with theoretical predictions and organized within a newly established nomenclature, offering a robust reference for future research.
Alwin Wüthrich +11 more
wiley +1 more source
III-Vs Review, 2004 AbstractAs MOVPE moves into a production line tool thanks to nitrides, all eyes turn to the silicon industry's approach to safety. But compound has its own peculiar problems, which emerged from the audience comments and questions at an expert panel talk.
openaire +1 more source
MOVPE for production scale manufacturing
III-Vs Review, 1997 AbstractIn the last four to five years MOVPE technology has very definitely moved out of the laboratory and onto the production floor. From being a technology confined to research and at best used commercially in the form of “home-made” installations in industry, it has emerged as a highly efficient tool sought after by the world's leading ...
O'Connell, S. +3 more
openaire +1 more source
Solar‐Blind Ultraviolet Photodetectors Based on Two‐Dimensional Materials and Their Heterostructures
Advanced Physics Research, Volume 5, Issue 2, February 2026.Solar‐blind ultraviolet photodetectors are crucial for diverse applications. This review comprehensively summarizes recent advances using two‐dimensional materials and their heterostructures, which offer tunable bandgaps, flexibility, and no lattice‐matching constraints.
Yu Lu +7 more
wiley +1 more source
MOVPE grown periodic AlN/BAlN heterostructure with high boron content
, 2015 Five-period AlN/BAlN heterostructure containing boron as high as 11% has been successfully grown by MOVPE. Good periodicity of two alternative layers has been observed by both SIMS profile and Z-contrast HAADF-STEM images.
Xiaohang Li +12 more
semanticscholar +1 more source