Results 61 to 70 of about 20,503 (202)

Growth control of GaAs nanowires using pulsed laser deposition with arsenic over pressure

, 2007
Using pulsed laser ablation with arsenic over pressure, the growth conditions for GaAs nanowires have been systematically investigated and optimized. Arsenic over pressure with As$_2$ molecules was introduced to the system by thermal decomposition of ...
A J Hauser, Borgström M T, F Y Yang, Roest A L, T R Lemberger, X W Zhao   +5 more
core   +1 more source

Metastable Ordered Mesoporous h‐LuFeO3 Thin Films Prepared by Soft‐Templating: Optical, Electronic, and Magnetic Properties

Advanced Materials Interfaces, Volume 13, Issue 2, 20 January 2026.
An intriguing design concept for the preparation of metastable mesoporous h‐LuFeO3 thin films and powders by soft‐templating is presented. The hexagonal rather than the orthorhombic phase is formed due to the presence of a polymer structure‐directing agent in the synthesis.
Christian Suchomski, Christian Reitz, Vipin Kumar, Igor Djerdj, Marcus Einert, Torsten Brezesinski, Bernd Smarsly   +6 more
wiley   +1 more source

Engineering the side facets of vertical [100] oriented InP nanowires for novel radial heterostructures [PDF]

, 2019
In addition to being grown on industry-standard orientation, vertical [100] oriented nanowires present novel families of facets and related cross-sectional shapes.
Caroff, Philippe, Fonseka, H. Aruni, Guo, Yanan, Jagadish, Chennupati, Sánchez, Ana M., Tan, Hark Hoe   +5 more
core   +1 more source

Exploring the Role of III‐V Semiconductor‐Based Nanowire Composition and Geometry on Photoelectrochemical Reactions

Advanced Energy and Sustainability Research, Volume 7, Issue 1, January 2026.
III‐V nanowires have shown great potential for use as electrodes in photoelectrochemical water splitting. It has been demonstrated that their durability and efficiency depend on their geometry and composition. All of those tested sustained H2 production for 2 h.
Juliane Koch, Chris Yannic Bohlemann, Sahar Shekarabi, David Ostheimer, Peter Kleinschmidt, Thomas Hannappel   +5 more
wiley   +1 more source

Enabling III-V-based optoelectronics with low-cost dynamic hydride vapor phase epitaxy

, 2018
Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials have improved performance compared to silicon, but currently they are relegated to applications
Horowitz, Kelsey, Ptak, Aaron J., Remo, Timothy, Schulte, Kevin L., Simon, John, Young, David L.   +5 more
core   +1 more source

Epitaxial growth of aligned semiconductor nanowire metamaterials for photonic applications [PDF]

, 2008
A novel class of optical metamaterials is presented consisting of high densities of aligned gallium phosphide (GaP) nanowires fabricated using metal-organic vapor phase-epitaxy.
Bakkers, Bohren, Born, Burnett, De Heer, Doron-Mor, Engheta, Genereux, Givargizov, Gross, Hochbaum, Kosaka, Kotlyar, Künzner, Law, Li, Lin, Liu, Létant, Muskens, Muskens, Mårtensson, Palik, Pauzauskie, Peeters, Stewart, Tian, Tong, Verheijen, Wagner, Wang, Weber, Xi, Xu   +33 more
core   +1 more source

Electron Channeling Contrast Imaging for the Characterization of Dislocations in III−V Thin Films on Silicon (001)

physica status solidi (a), Volume 223, Issue 2, January 2026.
Defect characterization plays a crucial role in semiconductor research, yet the development of fast, cheap, and nondestructive tools remains challenging. This work applies electron channeling contrast imaging (ECCI) to III–V thin films on silicon, examining beam parameters and diffraction conditions.
Laura Monge‐Bartolome, Paula Mouriño Miñambres, Alicia Peiro Codoñer, Miguel Sinusia Lozano, Zhao Yan, Ivan Garcia Vara, Thierry Baron, Qiang Li, Víctor J. Gómez   +8 more
wiley   +1 more source

Optical Characterisation of MOVPE Grown Vertically Correlated InAs/GaAs Quantum Dots

, 2006
Structures with self-organised InAs quantum dots in a GaAs matrix were grown by the low pressure metal-organic vapour phase epitaxy (LP-MOVPE) technique.
Hazdra, P., Hospodkova, A., Hulicius, E., Kuldova, K., Oswald, J., Pangrac, J., Voves, J.   +6 more
core  

Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells

, 2010
We investigate the dependence of the low-temperature photoluminescence linewidths from InP-lattice-matched InGaAs/InAlAs quantum wells on the low-angle misorientation from the (100) surface of the host InP substrate.
Dimastrodonato, Valeria, Hughes, Greg, Hurley, Paul K., Knight, Gabrielle R., Mereni, Lorenzo O., Pelucchi, Emanuele, Petkov, Nikolay, Young, Robert J.   +7 more
core   +1 more source

In Situ 4D STEM of LiNiO2 Particles Heated in an Oxygen Atmosphere: Toward Investigation of Solid‐State Batteries Under Realistic Processing Conditions

Small Methods, Volume 10, Issue 2, 22 January 2026.
An experimental protocol, including sample preparation and experimental setup, for heating large, thinned cathode active material particles in situ in an oxygen atmosphere is presented. Using 4D scanning transmission electron microscopy nanobeam diffraction and ex situ measurements, the structural evolution of LiNiO2 during heating in oxygen is ...
Thomas Demuth, Shamail Ahmed, Philipp Kurzhals, Johannes Haust, Jürgen Belz, Andreas Beyer, Jürgen Janek, Kerstin Volz   +7 more
wiley   +1 more source