Results 71 to 80 of about 20,503 (202)

Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE

AIP Advances, 2021
Ta‐Shun Chou, Palvan Seyidov, S. Bin Anooz, R. Grüneberg, Thi Thuy Vi Tran, K. Irmscher, M. Albrecht, Z. Galazka, J. Schwarzkopf, A. Popp   +9 more
semanticscholar   +1 more source

A quantum chemical study on gas phase decomposition pathways of triethylgallane (TEG, Ga(C2H5)3) and tert-butylphosphine (TBP, PH2(t-C4H9)) under MOVPE conditions.

Physical Chemistry, Chemical Physics - PCCP, 2014
The gas phase decomposition reactions of precursor molecules relevant for metal-organic vapour phase epitaxy (MOVPE) of semiconductor thin films are investigated by computational methods on the density-functional level as well as on the ab initio (MP2 ...
Andreas Stegmüller, P. Rosenow, R. Tonner   +2 more
semanticscholar   +1 more source

Stretching magnetism with an electric field in a nitride semiconductor

, 2016
By direct magnetization measurements, performed employing a new detection scheme, we demonstrate an electrical control of magnetization in wurtzite (Ga,Mn)N.
Adhikari, R., Bonanni, A., Dietl, T., Foltyn, M., Gas, K., Jakiela, R., Kosiel, K., Kruszka, R., Li, Tian, Mazur, G. P., Piotrowska, A., Sawicki, M., Sztenkiel, D., Zgirski, M.   +13 more
core   +1 more source

Metal‐Insulator‐Semiconductor Structure‐Based InGaN/GaN Micro‐Light‐Emitting Devices with Superior External Quantum Efficiency

Laser &Photonics Reviews, Volume 19, Issue 24, December 17, 2025.
Micro‐LEDs with a novel metal‐insulator‐semiconductor (MIS) sidewall structure enable bias control of surface recombination and efficiency. Applying a positive sidewall voltage improves more than 50% EQE at low current density and achieves a record‐high 53.9% EQE.
Jian Yin, Reza Chaji, Ding Li, Zhong Lin Wang, Md Soyaeb Hasan, Dayan Ban   +5 more
wiley   +1 more source

Semiconductor nanostructures engineering: Pyramidal quantum dots

, 2012
Pyramidal quantum dots (QDs) grown in inverted recesses have demonstrated over the years an extraordinary uniformity, high spectral purity and strong design versatility.
A. Gocalinska, Atkinson, Avron, Baier, Bayer, Brunner, Calic, Dalacu, Dias, Dimastrodonato, Dimastrodonato, Dimastrodonato, Ding, E. Pelucchi, G. Juska, Gammon, Hakkarainen, Hartmann, Hartmann, Healy, Huggenberger, Jovanov, Kapon, Kapon, Karlsson, Karlsson, L.O. Mereni, Lai, Liang, Mereni, Mohan, Ortner, Pelucchi, Pelucchi, Pelucchi, Pfau, Poole, Reimer, Schneider, Skiba-Szymanska, Song, Stevenson, Stinaff, Troncale, Turala, V. Dimastrodonato, Verma, Wang, Zhu, Zhu, Zhu   +50 more
core   +1 more source

Competitive growth mechanisms of AlN on Si (111) by MOVPE

Scientific Reports, 2014
To improve the growth rate and crystal quality of AlN, the competitive growth mechanisms of AlN under different parameters were studied. The mass transport limited mechanism was competed with the gas-phase parasitic reaction and became dominated at low ...
Yuxia Feng, Hongyuan Wei, Shao-yan Yang, Zhen Chen, Lianshan Wang, Susu Kong, Guijuan Zhao, X. Liu   +7 more
semanticscholar   +1 more source

Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructures

, 2004
We first report a detailed transmission electron microscopy study of dislocation networks (DNs) formed at shallowly buried interfaces obtained by bonding two GaAs crystals between which we establish in a controlled manner a twist and a tilt around a ...
Frank Glas, Gilles Patriarche, Guillaume Saint-Girons, Isabelle Sagnes, J. P. Hirth, José Coelho, Ludovic Largeau, M. Benamara, P. B. Hirsch   +8 more
core   +2 more sources

Structural and paramagnetic properties of dilute Ga1-xMnxN

, 2011
Systematic investigations of the structural and magnetic properties of single crystal (Ga,Mn)N films grown by metal organic vapor phase epitaxy are presented. High resolution transmission electron microscopy, synchrotron x-ray diffraction, and extended x-
Alberta Bonanni, Andrea Navarro-Quezada, Andreas Grois, Bogdan Faina, Dariusz Sztenkiel, F. Boscherini, F. D’Acapito, Francesco d’Acapito, K. A. Kikoin, M.-H. Ham, Maciej Sawicki, Mauro Rovezzi, Rafał Jakieła, Thibaut Devillers, Tian Li, Tomasz Dietl, Wiktor Stefanowicz   +16 more
core   +1 more source

The role of hydrostatic stress in determining the bandgap of InN epilayers

, 2007
We establish a correlation between the internal stress in InN epilayers and their optical properties such as the measured absorption band edge and photoluminescence emission wavelength.
Arora, B. M., Bhattacharya, Arnab, Ganguli, Tapas, Ghosh, Sandip, Gokhale, M. R., Kadir, Abdul, Kumar, Ravi, Shah, A. P.   +7 more
core   +1 more source

Quantum transport in weakly coupled superlattices at low temperature

, 2010
We report on the study of the electrical current flowing in weakly coupled superlattice (SL) structures under an applied electric field at very low temperature, i.e. in the tunneling regime. This low temperature transport is characterized by an extremely
Berger, V., Lhuillier, E., Nedelcu, A., Ribet-Mohamed, I., Rosencher, E.   +4 more
core   +2 more sources