Twinning superlattices in indium phosphide nanowires
Here, we show that we control the crystal structure of indium phosphide (InP) nanowires by impurity dopants. We have found that zinc decreases the activation barrier for 2D nucleation growth of zinc-blende InP and therefore promotes the InP nanowires to ...
A Fissel +33 more
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We report in this work on the spectral purity of pyramidal site-controlled InGaAs/AlGaAs Quantum Dots grown by metalorganic vapour phase epitaxy on(111)B oriented GaAs substrates. Extremely sharp emission peaks were found, showing linewidths surprisingly
Dimastrodonato, Valeria +3 more
core +1 more source
AbstractThe predominance of activity in the nitrides field and the emergence of in situ monitoring into mainstream metal organic vapour phase epitaxy were among the themes of the 8th European Workshop on MOVPE. The location of Prague close to the geographical centre of the united Europe did much to encourage participation from all corners of the ...
openaire +1 more source
Low-Threshold Electrically Pumps Vertical-Cavity Surface-Emitting Microlasers [PDF]
Vertical-cavity electrically driven lasers with three GaInAs quantum wells and diameters of several μm exhibit room-temperature pulsed current thresholds as low as 1.3mA with 958 nm output ...
Florez, L. T. +6 more
core
Pattern Fidelity of Vertically Aligned GaAs Nanowire Arrays. [PDF]
Koch J +7 more
europepmc +1 more source
Sputtered AlN Buffer Layer for Low-Loss Crystalline AlN-on-Sapphire Integrated Photonics. [PDF]
Brunetta S +6 more
europepmc +1 more source
Supersaturation-Dependent Competition between β and κ Phases in the MOVPE Growth of Ga<sub>2</sub>O<sub>3</sub> on Al<sub>2</sub>O<sub>3</sub> (0001) and GaN (0001) Substrates. [PDF]
Seravalli L +16 more
europepmc +1 more source
Growth of Ga0.70In0.30N/GaN Quantum-Wells on a ScAlMgO4 (0001) Substrate with an Ex-Situ Sputtered-AlN Buffer Layer. [PDF]
Zheng DG, Min S, Kim J, Han DP.
europepmc +1 more source
Quantum walk comb in a dual waveguide quantum cascade laser. [PDF]
Cargioli A +5 more
europepmc +1 more source
SIMS Investigation of Al Diffusion Across Interfaces in AlGaN/GaN and AlN/GaN Heterostructures. [PDF]
Laifi J, Hasaneen MF, Bchetnia A.
europepmc +1 more source

