Results 51 to 60 of about 930 (165)

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1‐x‐Based Selector‐Only Memory

Advanced Electronic Materials, EarlyView.
Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen, Changdeok Han, Dipannita Ghosh, Suyong Chae, Moongyu Choi, Sanghyun Ban, Myoungsub Kim, Sangmin Yoo, Seung Hwan Lee, Sieun Chae   +9 more
wiley   +1 more source

Investigation of Retention Noise for 3-D TLC NAND Flash Memory

IEEE Journal of the Electron Devices Society, 2019
In this paper, the retention noise [electron emission statistics (EES)] after program operation of 3-D triple-level program cell (TLC) NAND flash memory is investigated.
Kunliang Wang, Gang Du, Zhiyuan Lun, Xiaoyan Liu   +3 more
doaj   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

Advanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison, Kevin Nadaud, Josquin Harrison, Guillaume F. Nataf, Laura Bégon‐Lours   +4 more
wiley   +1 more source

Digital Transformation for Sustainable Development of SMEs: A Systematic Review of ‘How We Know,’ ‘What We Know’ and Research Agenda

Business Strategy and the Environment, EarlyView.
ABSTRACT Small‐ and medium‐sized enterprises (SMEs) are expected to contribute more significantly to the sustainability agenda. Digital transformation (DT) has the potential to enable SMEs to fulfil their sustainable development goals. However, SMEs encounter unique challenges in leveraging DT for sustainability due to their size, limited resources and
Phuc G. Le, Duyen Chu, Thomas Domboka, Hien Nguyen   +3 more
wiley   +1 more source

Nitrogen‐Doped GeTeS Ovonic Threshold Switching Selector With Optimized Performance Trade‐Off for 1S–1R Phase‐Change Memory

Small, EarlyView.
This study introduced a Ge‐Te‐S co‐sputtering process to resolve the performance trade‐off between GeTe and GeS in OTS selector devices, and improved device durability through nitrogen doping. Furthermore, in a 1S‐1R structure incorporating phase‐change memory devices, it simultaneously achieved excellent thermal stability, durability, high‐speed ...
Min Su Kang, Jong Min Joo, Jun Young Choi, Ji Eun Park, Dong Hyun Kim, Jin Suk Oh, Tae Geun Kim   +6 more
wiley   +1 more source

Hardware-Efficient Nonlinear Voltage Threshold Estimation for NAND Flash Memory via Lightweight Deep Learning

IEEE Access
Modern NAND flash memory requires adaptive signal processing to address reliability degradation caused by technology scaling and environmental stress. Conventional NAND flash controllers rely on static, block-level read voltage thresholds (VTs), which ...
Eyal Nitzan, Eviatar Yadai, Assaf Sella, Nimrod Bregman, Avi Steiner, Hanan Weingarten   +5 more
doaj   +1 more source

Beyond Conventional Ferroelectric Field‐Effect Transistors: Recent Advances in Materials, Architectures, and Functional Applications

Advanced Physics Research, Volume 5, Issue 9, September 2026.
Ferroelectric field‐effect transistors (FeFETs) are advancing beyond conventional memory transistors into multifunctional hardware platforms enabled by emerging ferroelectric materials, scalable architectures, and neuromorphic/optoelectronic functionalities. Through HfO2‐based, two‐dimensional, and organic ferroelectrics, FeFETs achieve CMOS‐compatible
Hyeseoung Lee, Seungjun Lee, Jung‐Kyu Lee, Sungjun Kim   +3 more
wiley   +1 more source

3D NAND flash memory based on junction-less a-Si:H channel with high on/off current ratio

AIP Advances, 2022
As the key hardware unit of computing in memory, 3D NAND flash memory has been the focus of the artificial intelligence (AI) era due to its high efficiency in processing massive and diverse data, which is superior to the conventional von-Neumann ...
Xinyue Yu, Zhongyuan Ma, Kangmin Leng, Tong Chen, Wei Li, Kunji Chen, Jun Xu, Ling Xu   +7 more
doaj   +1 more source

A Survey on Flash Translation Layer for NAND Flash Memory [PDF]

Indian Journal of Science and Technology, 2018
The requirement for storage performance and capacity are increasing rapidly. NAND flash-based SSDs have been proposed as a reliable and speedy and low power consumption storage device. An important part of each SSDs is its flash translation layers (FTL).
P.K. Singh, Kumkum Dubey, Shailesh Kumar
openaire   +1 more source