Results 51 to 60 of about 208,791 (200)
Advanced Science, EarlyView.A dual‐randomness hardware platform is demonstrated by integrating PUF and TRNG functionalities into mixed‐ZGO nanoclusters. By leveraging spatial and temporal stochasticity, the mixed‐ZGO NCs device enables both unique identification and random signal generation.
Seungme Kang +6 more
wiley +1 more source
Advanced Science, EarlyView.GeSbSe selector‐only memory devices are investigated through physical and electrical analyses to reveal opposite trap‐state evolution pathways governing reliability degradation. Endurance cycling drives Se migration, transitioning traps from deep to shallow states.
Byung Jun Lee +3 more
wiley +1 more source
, 2009 National audienceLes mémoires non-volatiles et plus spécialement les mémoires Flash sont de plus en plus utilisées dans le contexte SoC. Cet article présente une étude préliminaire des mécanismes de défaillances pouvant affecter les mémoires Flash ...
Girard, Patrick +5 more
core +2 more sources
Re‐Thinking Electronic Circuit Design Through Emerging Reconfigurable Field Effect Transistors
Advanced Science, EarlyView.Graphical illustration of reconfigurable field effect transistor (RFET) operation modes, including n‐type, p‐type, and ambipolar transport, as well as their areas of application discussed in this review: digital circuit design, analog circuit design, post‐Shannon computing, and sensing. ABSTRACT Reconfigurable field‐effect transistors, short RFETs, are
Jens Trommer +19 more
wiley +1 more source
Exploring Design Dimensions in Flash-based Mass-memory Devices [PDF]
, 2009 Mission-critical space system applications present several issues: a typical one is the design of a mass-memory device (i.e., a solid- state recorder).
Caramia, M. +4 more
core
A Novel Program Suspend Scheme for Improving the Reliability of 3D NAND Flash Memory
IEEE Journal of the Electron Devices Society, 2022 Experimental results indicate that the conventional program suspend scheme in 3D NAND flash memory chip can generate unexpected additional read fail bits and reduce the reliability of 3D NAND flash memory. These extra read fail bits are observed when the
Zhichao Du +11 more
doaj +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Flash-memories in Space Applications: Trends and Challenges [PDF]
, 2009 Nowadays space applications are provided with a processing power absolutely overcoming the one available just a few years ago. Typical mission-critical space system applications include also the issue of solid-state recorder(s).
Caramia, M. +4 more
core
3D NAND-технология для изготовления flash-памяти [PDF]
, 2019 В работе приведен краткий обзор процесса развития микроэлектроники, рассмотрены возможности и перспективы использования 3D NAND-технологии для изготовления flash -памяти и других средств электронной и вычислительной ...
Котов, Е. Г.
core +1 more source
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source