Results 51 to 60 of about 20,000 (231)
Increasing Flash Memory Lifetime by Dynamic Voltage Allocation for Constant Mutual Information [PDF]
, 2014 The read channel in Flash memory systems degrades over time because the Fowler-Nordheim tunneling used to apply charge to the floating gate eventually compromises the integrity of the cell because of tunnel oxide degradation.
Chen, Tsung-Yi +2 more
core +1 more source
Capacity of Multilevel NAND Flash Memory Channels [PDF]
IEEE Transactions on Information Theory, 2017 zbMATH Open Web Interface contents unavailable due to conflicting licenses.
Li, Y, Kavcic, A, Han, G
openaire +4 more sources
On the Capacity of Multilevel NAND Flash Memory Channels
, 2016 In this paper, we initiate a first information-theoretic study on multilevel NAND flash memory channels with intercell interference. More specifically, for a multilevel NAND flash memory channel under mild assumptions, we first prove that such a channel ...
Han, Guangyue +2 more
core +1 more source
FLARE: A design environment for FLASH-based space applications [PDF]
, 2009 Designing a mass-memory device (i.e., a solid-state recorder) is one of the typical issues of mission-critical space system applications. Flash-memories could be used for this goal: a huge number of parameters and trade-offs need to be explored.
Caramia, M. +3 more
core +1 more source
Life-Cycle Assessment of NAND Flash Memory [PDF]
IEEE Transactions on Semiconductor Manufacturing, 2011 Solid state drives (SSDs) show potential for environmental benefits over magnetic data storage due to their lower power consumption. To investigate this possibility, a life-cycle assessment (LCA) of NAND flash over five technology generations (150 nm, 120 nm, 90 nm, 65 nm, and 45 nm) is presented to quantify environmental impacts occurring in flash ...
Boyd, Sarah, Horvath, A, Dornfeld, David
openaire +2 more sources
EngIn order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAND ...
Beomjun Kim +2 more
doaj +1 more source
A Novel Program Suspend Scheme for Improving the Reliability of 3D NAND Flash Memory
IEEE Journal of the Electron Devices Society, 2022 Experimental results indicate that the conventional program suspend scheme in 3D NAND flash memory chip can generate unexpected additional read fail bits and reduce the reliability of 3D NAND flash memory. These extra read fail bits are observed when the
Zhichao Du +11 more
doaj +1 more source
On Benchmarking Embedded Linux Flash File Systems
, 2012 Due to its attractive characteristics in terms of performance, weight and power consumption, NAND flash memory became the main non volatile memory (NVM) in embedded systems.
Boukhobza, Jalil +2 more
core +2 more sources
Trade-offs between Instantaneous and Total Capacity in Multi-Cell Flash Memories [PDF]
, 2012 The limited endurance of flash memories is a major design concern for enterprise storage systems. We propose a method to increase it by using relative (as opposed to fixed) cell levels and by representing the information with Write Asymmetric Memory ...
Bruck, Jehoshua +2 more
core +2 more sources
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Advanced Functional Materials, EarlyView.Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source