Results 61 to 70 of about 930 (165)

Unlocking Ferroelectricity in Hafnia: From Phase Origins to Device Integration

Interdisciplinary Materials, Volume 5, Issue 5, Page 749-771, September 2026.
This review provides a systematic overview of the critical factors for inducing ferroelectricity in hafnia‐based systems, covering multiple dimensions such as physical origin mechanisms, materials research, integration strategies, and emerging application areas.
Jiangzhen Niu, Xichen Tang, Wenhui Shi, Yunrui Xiu, Huimin Mao, Ye Tao, Xiaoning Zhao, Ya Lin, Zhongqiang Wang, Haiyang Xu, Yichun Liu   +10 more
wiley   +1 more source

Molecular logics in dual sensor regulation of diguanylate cyclase activity—Phosphorylation OR blue‐light activation

Protein Science, Volume 35, Issue 9, September 2026.
Abstract Bacterial cells use multiple environmental cues to regulate levels of the second messenger cyclic dimeric GMP. This compound influences key lifestyle decisions such as motility, biofilm formation, or virulence. Although many diguanylate cyclases (DGCs) combined with various sensory domains have been studied previously, how distinct inputs are ...
Maximilian Fuchs, Andreas Winkler
wiley   +1 more source

Flash array invalid block management

Dianzi Jishu Yingyong
Flash arrays play an important role in data storage today. The key to improve the reliability of Flash array is to propose a reasonable bad management method. For inherently bad blocks, the bad block management method based on integrated block and EEPROM
Jiao Xinquan, Zhu Zhenlin
doaj   +1 more source

Robust Antiferroelectric Response in the Pbca Phase of Hafnium Zirconium Oxide via Aluminum Substitution

Journal of the American Ceramic Society, Volume 109, Issue 9, September 2026.
ABSTRACT Hafnium zirconium oxide (HZO) has attracted attention for applications in nonvolatile memory and energy harvesting devices. However, it faces practical challenges such as insufficient endurance. One promising strategy to address this limitation is the utilization of antiferroelectric (AFE) behavior in HZO‐based materials. Previous studies have
Yong Kyu Choi, MinChul Kang, Tinsae Alem, Nicolas K. Lam, Andrea L. Watson, Kory Burns, Stephen J. McDonnell, Lin Zhou, Jon F. Ihlefeld   +8 more
wiley   +1 more source

Systematic Analysis of Spacer and Gate Length Scaling on Memory Characteristics in 3D NAND Flash Memory

Applied Sciences
This study investigates the impact of oxide/nitride (ON) pitch scaling on the memory performance of 3D NAND flash memory. We aim to enhance 3D NAND flash memory by systematically reducing the spacer length (Ls) and gate length (Lg) to achieve improved ...
Hee Young Bae, Seul Ki Hong, Jong Kyung Park   +2 more
doaj   +1 more source

NAD Memory: A Hybrid Memory Device Combined With NAND Flash Memory and DRAM

IEEE Access
Advancements in semiconductor technology have significantly improved the performance of DRAM and NAND flash, establishing them as high-speed main memory and high-capacity storage, respectively.
Sojoong Kim, Ji-Hoon Ahn, Minsuk Koo, Yoon Kim   +3 more
doaj   +1 more source

Self-Organizing Mapping Neural Network Implementation Based on 3-D NAND Flash for Competitive Learning

IEEE Journal of the Electron Devices Society
Self-organizing Map (SOM) neural network is a prominent algorithm in unsupervised machine learning, which is widely used for data clustering, high-dimensional visualization, and feature extraction.
Anyi Zhu, Lei Jin, Wen Zhou, Tianchun Ye, Zongliang Huo   +4 more
doaj   +1 more source

BABOL: A Software-Defined NAND Flash Controller

2024 57th IEEE/ACM International Symposium on Microarchitecture (MICRO)
NAND Flash Storage Controllers are a crucial component of Solid State Drives (SSDs). They provide an abstractionof Flash packages to the SSD firmware by translating high-leveloperations, such as a Page Program or a Block Erase, into lowlevel signals. In theory, the Open NAND Flash Interface (ONFI)specification standardizes this interface.
Kibin Park, Alberto Lerner, Sangjin Lee 0001, Philippe Bonnet, Yong Ho Song, Philippe Cudré-Mauroux, Jungwook Choi   +6 more
openaire   +1 more source

Unsupervised Context Adaptation With Attention for Estimating Threshold Voltage Distributions Under Process Variation

IEEE Access
NAND flash memory is a type of non-volatile memory that provides high-density storage capacity with fast read and write operations. However, increasing storage capacity and density lead to significant data reliability degradation.
Inhyuk Choi, Minyoung Hwang, Jeongju Jee, Hyuncheol Park   +3 more
doaj   +1 more source

Investigation of the Connection Schemes between Decks in 3D NAND Flash. [PDF]

Micromachines (Basel), 2023
Jia J, Jin L, You K, Zhu A.
europepmc   +1 more source