Results 61 to 70 of about 208,791 (200)
IEEE AccessNAND flash memory has emerged as a compelling platform for intrinsic security primitives because of its widespread use, scalable architecture, and rich device-level variability.
Pyi Phyo Aung +2 more
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Review of ferroelectric field‐effect transistors for three‐dimensional storage applications
Nano Select, 2021 The ferroelectric field‐effect transistor (FeFET) is one of the leading contenders to succeed charge‐trap‐based flash memory (CTF) devices in the current vertically‐integrated NAND flash storage market.
Hyeon Woo Park +2 more
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Advanced Electronic Materials, EarlyView.Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen +9 more
wiley +1 more source
Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold Voltages
Micromachines, 2022 Over the past few decades, NAND flash memory has advanced with exponentially-increasing bit growth. As bit cells in 3D NAND flash memory are stacked up and scaled down together, some potential challenges should be investigated.
Dongwoo Lee, Changhwan Shin
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Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation
Advanced Intelligent Systems, EarlyView.Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison +4 more
wiley +1 more source
Characterizing 3D Floating Gate NAND Flash
, 2017 In this paper, we characterize a state-of-the-art 3D floating gate NAND flash memory through comprehensive experiments on an FPGA platform. Then, we present distinct observations on performance and reliability, such as operation latencies and various ...
Yue Zhu +7 more
core +1 more source
Vertical NAND Flash Memory‐Based Bayesian Neural Networks With Intrinsic Gaussian Weight Sampling
Advanced Intelligent Systems, EarlyView.Commercial vertical NAND flash memory supports Bayesian neural networks by using paired cells to produce bell‐shaped weight distributions. Read voltage controls their spread without additional memory cells or changes to the array structure. Simulations based on device measurements demonstrate improved uncertainty estimation and accuracy gains of up to ...
Sung‐Ho Park +8 more
wiley +1 more source
Business Strategy and the Environment, EarlyView.ABSTRACT Small‐ and medium‐sized enterprises (SMEs) are expected to contribute more significantly to the sustainability agenda. Digital transformation (DT) has the potential to enable SMEs to fulfil their sustainable development goals. However, SMEs encounter unique challenges in leveraging DT for sustainability due to their size, limited resources and
Phuc G. Le +3 more
wiley +1 more source
Investigation of Retention Noise for 3-D TLC NAND Flash Memory
IEEE Journal of the Electron Devices Society, 2019 In this paper, the retention noise [electron emission statistics (EES)] after program operation of 3-D triple-level program cell (TLC) NAND flash memory is investigated.
Kunliang Wang +3 more
doaj +1 more source
Domain‐Wall Circulation Gating and Pinning via Compositional Engineering of Cylindrical Nanowires
Small, EarlyView.Cylindrical magnetic nanowires offer a promising platform for future three‐dimensional spintronic devices. By strategically engineering nanometer‐scale chemical modulations, a novel circulation gate is established to control domain wall propagation.
Laura Álvaro‐Gómez +14 more
wiley +1 more source