Results 81 to 90 of about 208,791 (200)
In questa tesi verranno trattate le memorie Flash. Partendo da una breve introduzione all'argomento, si studierà prima il funzionamento a livello fisico del transistor, il suo inserimento in un'architettura a NAND e i metodi di accesso e scrittura del ...
Felber, Henry
core
Modeling NAND Flash Memories for Circuit Simulations
In this paper, we will present the basic structure and the parameter extraction procedure for a compact model of a NAND Flash memory string working in Spice-like circuit simulators.
L. Larcher +8 more
core +1 more source
This study investigates the impact of oxide/nitride (ON) pitch scaling on the memory performance of 3D NAND flash memory. We aim to enhance 3D NAND flash memory by systematically reducing the spacer length (Ls) and gate length (Lg) to achieve improved ...
Hee Young Bae +2 more
doaj +1 more source
NAND flash memory technologies
This book discusses basic and advanced NAND flash memory technologies, including the principle of NAND flash, memory cell technologies, multi-bits cell technologies, scaling challenges of memory cell, reliability, and 3-dimensional cell as the future ...
Aritome, Seiichi
core
NAD Memory: A Hybrid Memory Device Combined With NAND Flash Memory and DRAM
Advancements in semiconductor technology have significantly improved the performance of DRAM and NAND flash, establishing them as high-speed main memory and high-capacity storage, respectively.
Sojoong Kim +3 more
doaj +1 more source
BABOL: A Software-Defined NAND Flash Controller
NAND Flash Storage Controllers are a crucial component of Solid State Drives (SSDs). They provide an abstractionof Flash packages to the SSD firmware by translating high-leveloperations, such as a Page Program or a Block Erase, into lowlevel signals. In theory, the Open NAND Flash Interface (ONFI)specification standardizes this interface.
Kibin Park +6 more
openaire +1 more source
Effects of Edge Thinning on Fowler-Nordheim Tunneling Current of NAND-Type Flash Memory Cells
The edge thinning of tunnel oxide is numerically found to increase the Fowler-Nordheim (FN) tunneling gate current in NAND-type Flash cells during programming and erasing operations.
Ji-Ting Liang +8 more
core
Characterizing 3D Charge Trap NAND Flash: Observations, Analyses and Applications
In the 3D era, the Charge Trap (CT) NAND flash is employed by mainstream products, thus having a deep understanding of its characteristics is becoming increasingly crucial for designing flash-based systems. In this paper, to enable such understanding, we
Yue Zhu +13 more
core +1 more source
A NOR Emulation Strategy over NAND Flash Memory
快閃記憶體大致可分為兩類:NOR型快閃記憶體及NAND型快閃記憶體。一般而言,因為有就地執行(eXecute-In-Place,XIP)和快速讀取等特性,NOR型快閃記憶體應用上適用於儲存程式的可執行檔。而擁有較大容量與較快寫入速度的NAND型快閃記憶體則適用於資料儲存。此外,兩者在成本上有很大的差距,NOR型快閃記憶體相對於NAND型快閃記憶體高出許多。基於市場的趨勢,若能以較具經濟效益的NAND型快閃記憶體取代NOR型快閃,將可大幅地降低成本、提升毛利。在這篇論文中 ...
Lin, Chien-Hung, 林建宏
core
Dynamic Forest: An Efficient Index Structure for NAND Flash Memory
In this paper, we present an efficient index structure for NAND flash memory, called the Dynamic Forest (D-Forest). Since write operations incur high overhead on NAND flash memory, D-Forest is designed to minimize write operations for index updates.
Yang, Chul-Woong +3 more
core +1 more source

