Results 71 to 80 of about 208,791 (200)
Charge‐Domain In‐Memory Computing With NAND‐Compatible Ferroelectric Memcapacitor Crossbar
Small, EarlyView.A NAND‐compatible ferroelectric memcapacitor crossbar enables charge‐domain in‐memory computing through displacement‐current‐based readout with strongly suppressed static conduction. The platform combines reliable multilevel programmability, linear vector–matrix multiplication, and 3D‐scalable operation, while supporting hardware‐assisted image ...
Hwiho Hwang +4 more
wiley +1 more source
IEEE AccessModern NAND flash memory requires adaptive signal processing to address reliability degradation caused by technology scaling and environmental stress. Conventional NAND flash controllers rely on static, block-level read voltage thresholds (VTs), which ...
Eyal Nitzan +5 more
doaj +1 more source
Advanced Functional Materials, Volume 36, Issue 88, 2 November 2026.Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang +11 more
wiley +1 more source
A Survey on Flash Translation Layer for NAND Flash Memory [PDF]
Indian Journal of Science and Technology, 2018 The requirement for storage performance and capacity are increasing rapidly. NAND flash-based SSDs have been proposed as a reliable and speedy and low power consumption storage device. An important part of each SSDs is its flash translation layers (FTL).
P.K. Singh, Kumkum Dubey, Shailesh Kumar
openaire +1 more source
Exploring modeling and testing of NAND flash memories
, 2010 Testing NAND flash memories is a very complex issue due to the rapid scaling down of the technology and the related floating gate reliability issues: as a consequence a complete and technology independent test is needed.
Piazza, R. +7 more
core +1 more source
Flash array invalid block management
Dianzi Jishu YingyongFlash arrays play an important role in data storage today. The key to improve the reliability of Flash array is to propose a reasonable bad management method. For inherently bad blocks, the bad block management method based on integrated block and EEPROM
Jiao Xinquan, Zhu Zhenlin
doaj +1 more source
Triple‐Level Content‐Addressable Vertical NAND Flash Memory (Adv. Sci. 61/2026)
Advanced Science, Volume 13, Issue 61, 3 November 2026.Content‐Addressable V‐NAND Flash Memory A blue search beam illuminates the matching path through a towering, multilayer V‐NAND array. The image represents triple‐level content‐addressable V‐NAND, which stores and compares multilevel data in place for fast, energy‐efficient memory searches and AI computing.
Sung‐Ho Park +8 more
wiley +1 more source
An Efficient Dynamic Hash Index Structure for NAND Flash Memory
, 2009 We propose an efficient dynamic hash index structure suitable for a NAND flash memory environment. Since write operations incur significant overhead in NAND flash memory, our design of index structure focuses on minimizing the number of write operations ...
Myoung Ho KIM +7 more
core +1 more source
Advanced Materials, Volume 38, Issue 58, 16 October 2026.Mg─Te chalcogenides address the leakage scaling trade‐off in ultrathin selector‐only memory. Structural partitioning in multiphase Mg─Te, combined with highly ionic Mg─Te bonding and Hf interfacial engineering, supports reliable 5 nm thickness operation at low write voltage with suppressed leakage current, narrow threshold voltage distributions, 10 ns ...
Yoori Seo +5 more
wiley +1 more source
NAND Flash Testing: A Preliminary Study on Actual Defects
, 2009 International audienceEmbedded flash memories are dominated by the NOR architecture but NAND is becoming more and more adopted due to its high storage capacity.
P. Girard +13 more
core +1 more source