Results 1 to 10 of about 29,864 (192)

Visual Construction of Logical AND and NAND Gates [PDF]

open access: yesJournal of Chemistry, 2022
DNA logic gates are an important branch of DNA computing and have a wide range of applications in DNA computing. In this study, logic circuits of AND gate and NAND gate are built on origami substrate.
Xiyuan Wang   +5 more
doaj   +3 more sources

Monolithic Dual-Gate E-Mode Device-Based NAND Logic Block for GaN MIS-HEMTs IC Platform

open access: yesIEEE Journal of the Electron Devices Society, 2023
In this work, dual-gate enhancement-mode (E-mode) device based NAND circuit (DG-NAND) and the NAND block with double E-mode devices (DD-NAND) are developed and fabricated based on the GaN MIS-HEMTs (metal-insulator-semiconductor-high-electron-mobility ...
Yuhao Zhu, Fan Li, Miao Cui
exaly   +3 more sources

NAND gate response in a mesoscopic ring: An exact study [PDF]

open access: yesPhysica Scripta, 2009
NAND gate response in a mesoscopic ring threaded with a magnetic flux $\phi$ is investigated by using Green's function formalism. The ring is attached symmetrically to two semi-infinite one-dimensional metallic electrodes and two gate voltages, namely ...
Datta S   +3 more
core   +4 more sources

A novel gate-all-around with back-gate (GAAB) 3D NAND flash memory structure for high performance with disturbance-less program operation

open access: yesMemories - Materials, Devices, Circuits and Systems, 2023
In this paper, we propose a gate-all-around with back-gate (GAAB) 3D NAND flash memory structure for high performance and reliability. First, in the selected string, we confirmed that the proposed structure can improve program performance using negative ...
Sim Jaemin
exaly   +3 more sources

All optical NAND gate based on nonlinear photonic crystal ring resonator

open access: yesInformation Processing in Agriculture, 2016
In this paper we proposed a new design for all optical NAND gate. By combining nonlinear Kerr effect with photonic crystal ring resonators, we designed an all optical NAND gate.
Hassan Absalan
exaly   +3 more sources

Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next‐Generation High‐Density Storage Systems [PDF]

open access: yesAdvanced Science
Multilevel storage and low‐voltage operation position ferroelectric transistors as promising candidates for next‐generation nonvolatile memory. Among them, gate‐injection‐type ferroelectric transistors offer improved vertical scalability and power ...
Giuk Kim   +12 more
doaj   +2 more sources

A functionally complete logic gate in a soft photoresponsive hydrogel [PDF]

open access: yesNature Communications
Materials that compute—or process stimuli to generate a result output—are important in applications ranging from soft robotics to therapeutics. Here, we report a NAND gate based on the interactions of three self-trapped beams in a photoresponsive ...
Fariha Mahmood   +3 more
doaj   +2 more sources

Design and fabrication of 4 double input NAND gate chip with excellent electrical and physical performances [PDF]

open access: yesScientific Reports
In order to improve the performances of 4 two-input NAND so that it can be better used in the aerospace application field and in harsh environments, 4 two-input NAND gate chips were designed and successfully fabricated in this paper, based on 1.2 ...
Lijun Zhang   +3 more
doaj   +2 more sources

Ternary Logic Design Based on Novel Tunneling-Drift-Diffusion Field-Effect Transistors [PDF]

open access: yesNanomaterials
In this paper, a novel Tunneling-Drift-Diffusion Field-Effect Transistor (TDDFET) based on the combination of the quantum tunneling and conventional drift-diffusion mechanisms is proposed for the design of ternary logic circuits. The working principle of
Bin Lu   +7 more
doaj   +2 more sources

Research on unit circuits based on cathode modulated vacuum/air channel electron tube [PDF]

open access: yesMicrosystems & Nanoengineering
Over the past decade, the reported planar vacuum electron tubes (VETs) have not yet succeeded in resolving the gate leakage issue due to inherent limitations of their working principles, preventing their circuit integration thus far.
Wenjing Ying   +7 more
doaj   +2 more sources

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