Results 41 to 50 of about 29,884 (210)

Low-power vertical cavity NAND gate [PDF]

open access: yesSPIE Proceedings, 2005
The study of the Vertical-Cavity Semiconductor Optical Amplifiers (VCSOAs) for optical signal processing applications is increasing his interest. Due to their particular structure, the VCSOAs present some advantages when compared to their edge-emitting counterparts including low manufacturing costs, high coupling efficiency to optical fibers and the ...
Hurtado Villavieja, Antonio   +2 more
openaire   +3 more sources

Analytical Modeling of 3D NAND Flash Cell With a Gaussian Doping Profile

open access: yesIEEE Access, 2022
The incessantly increasing demand for highly dense storage medium in this era of big-data has led to the development of 3D NAND Flash memories. 3D NAND Flash based SSDs have revolutionized edge storage and become an integral part of the data warehouses ...
Amit Kumar, Raushan Kumar, Shubham Sahay
doaj   +1 more source

An Improved Dimensional Measurement Method of Staircase Patterns With Higher Precision in 3D NAND

open access: yesIEEE Access, 2020
3D NAND is a great architectural innovation in the field of flash memory. The staircase for control gate is a unique and important process in the manufacturing of 3D NAND.
Peizhen Hong   +7 more
doaj   +1 more source

High isolation RF signal selection switches [PDF]

open access: yes, 1974
A selection switch with high isolation between RF signal input terminals is achieved with a gated Schmitt trigger circuit feeding into a control NAND gate in each signal switching channel.
Detweiler, H. K., Hanna, M. F.
core   +1 more source

Demonstration of an All‐Optical AND Gate Mediated by Photochromic Molecules

open access: yesAdvanced Functional Materials, EarlyView.
A logic AND gate that runs on photons is demonstrated. It relies on two spatially separated photochromic molecules that work in tandem. Abstract The realization of a photonic logic AND gate, i.e. a logic AND gate that runs on photons rather than electrons, and where all steps are controlled by light, is demonstrated. In a proof‐of‐principle experiment,
Heyou Zhang   +7 more
wiley   +1 more source

Electroactive Metal–Organic Frameworks Enabling Unidirectional Electrochemical Capacitors and Logic Gates (MOF‐CAPode)

open access: yesAngewandte Chemie, EarlyView.
MOF‐CAPodes are introduced by pairing various p‐MOFs with an n‐MOF as electrode materials in a battery‐like assembly. The devices achieve high figures of merit (RRI = 23.5; RRII = 94.4%) and perform excellently in prototypical logic gates (AND, OR) highlighting a new direction for ionological systems based on electroactive MOFs.
Tim Engelhardt   +9 more
wiley   +2 more sources

A low power varactor based digitally controlled oscillator design in 180 nm CMOS technology

open access: yesSN Applied Sciences, 2023
This paper reports two distinct architectures for digitally-controlled oscillators (DCOs) utilizing MOS varactor, designed in TSMC 180 nm CMOS technology. The first DCO design employs a CMOS inverter, while the second design features a Three-Transistors (
Shweta Dabas, Manoj Kumar
doaj   +1 more source

Nonunitary quantum circuit

open access: yes, 2004
A quantum circuit is generalized to a nonunitary one whose constituents are nonunitary gates operated by quantum measurement. It is shown that a specific type of one-qubit nonunitary gates, the controlled-NOT gate, as well as all one-qubit unitary gates ...
HIROAKI TERASHIMA   +2 more
core   +5 more sources

Regiorandom Polythiophenes for Fully Stretchable Electrochemical Transistors and Logic Circuits

open access: yesAdvanced Functional Materials, EarlyView.
Regiorandom (RRa) polythiophenes, once regarded as unsuitable for electronics, exhibit exceptional switching performance via volumetric electrochemical doping. Optimized RRa‐based organic electrochemical transistors (OECTs) achieve a high on/off ratio (≈104), stable operation under 200% strain, and enable fully stretchable logic gates, demonstrating ...
Dong Hyun Park   +6 more
wiley   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

open access: yesAdvanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu   +5 more
wiley   +1 more source

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