Results 41 to 50 of about 29,884 (210)
Low-power vertical cavity NAND gate [PDF]
The study of the Vertical-Cavity Semiconductor Optical Amplifiers (VCSOAs) for optical signal processing applications is increasing his interest. Due to their particular structure, the VCSOAs present some advantages when compared to their edge-emitting counterparts including low manufacturing costs, high coupling efficiency to optical fibers and the ...
Hurtado Villavieja, Antonio +2 more
openaire +3 more sources
Analytical Modeling of 3D NAND Flash Cell With a Gaussian Doping Profile
The incessantly increasing demand for highly dense storage medium in this era of big-data has led to the development of 3D NAND Flash memories. 3D NAND Flash based SSDs have revolutionized edge storage and become an integral part of the data warehouses ...
Amit Kumar, Raushan Kumar, Shubham Sahay
doaj +1 more source
An Improved Dimensional Measurement Method of Staircase Patterns With Higher Precision in 3D NAND
3D NAND is a great architectural innovation in the field of flash memory. The staircase for control gate is a unique and important process in the manufacturing of 3D NAND.
Peizhen Hong +7 more
doaj +1 more source
High isolation RF signal selection switches [PDF]
A selection switch with high isolation between RF signal input terminals is achieved with a gated Schmitt trigger circuit feeding into a control NAND gate in each signal switching channel.
Detweiler, H. K., Hanna, M. F.
core +1 more source
Demonstration of an All‐Optical AND Gate Mediated by Photochromic Molecules
A logic AND gate that runs on photons is demonstrated. It relies on two spatially separated photochromic molecules that work in tandem. Abstract The realization of a photonic logic AND gate, i.e. a logic AND gate that runs on photons rather than electrons, and where all steps are controlled by light, is demonstrated. In a proof‐of‐principle experiment,
Heyou Zhang +7 more
wiley +1 more source
MOF‐CAPodes are introduced by pairing various p‐MOFs with an n‐MOF as electrode materials in a battery‐like assembly. The devices achieve high figures of merit (RRI = 23.5; RRII = 94.4%) and perform excellently in prototypical logic gates (AND, OR) highlighting a new direction for ionological systems based on electroactive MOFs.
Tim Engelhardt +9 more
wiley +2 more sources
A low power varactor based digitally controlled oscillator design in 180 nm CMOS technology
This paper reports two distinct architectures for digitally-controlled oscillators (DCOs) utilizing MOS varactor, designed in TSMC 180 nm CMOS technology. The first DCO design employs a CMOS inverter, while the second design features a Three-Transistors (
Shweta Dabas, Manoj Kumar
doaj +1 more source
A quantum circuit is generalized to a nonunitary one whose constituents are nonunitary gates operated by quantum measurement. It is shown that a specific type of one-qubit nonunitary gates, the controlled-NOT gate, as well as all one-qubit unitary gates ...
HIROAKI TERASHIMA +2 more
core +5 more sources
Regiorandom Polythiophenes for Fully Stretchable Electrochemical Transistors and Logic Circuits
Regiorandom (RRa) polythiophenes, once regarded as unsuitable for electronics, exhibit exceptional switching performance via volumetric electrochemical doping. Optimized RRa‐based organic electrochemical transistors (OECTs) achieve a high on/off ratio (≈104), stable operation under 200% strain, and enable fully stretchable logic gates, demonstrating ...
Dong Hyun Park +6 more
wiley +1 more source
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source

