Results 91 to 100 of about 208,791 (200)

Self-Organizing Mapping Neural Network Implementation Based on 3-D NAND Flash for Competitive Learning

open access: yesIEEE Journal of the Electron Devices Society
Self-organizing Map (SOM) neural network is a prominent algorithm in unsupervised machine learning, which is widely used for data clustering, high-dimensional visualization, and feature extraction.
Anyi Zhu   +4 more
doaj   +1 more source

An efficient fault detection algorithm for NAND flash memory

open access: yes, 2011
As flash memory gains its momentum in the storage market of embedded systems, existing fault detection algorithms face serious challenges due to the special characteristics of NAND flash memory and the rapid degradation of its reliability.
Tei-Wei Kuo   +4 more
core   +1 more source

NAND flash reliability with rank modulation

open access: yes, 2015
The reliability of NAND flash memory decreases rapidly as density increases, preventing the wide adoptions of flash-based storage systems. A novel data representation scheme named rank modulation (RM) is discussed for improving NAND flash reliability. RM
Bruck, Jehoshua   +3 more
core   +1 more source

Modeling NAND Flash Memories for IC Design

open access: yes, 2008
In this letter, we present a compact model of NAND Flash memory strings for circuit simulation purposes. This model is modular and easy to be implemented, and its parameters can be extracted through a simple procedure.
PAVAN, Paolo   +6 more
core   +1 more source

Unsupervised Context Adaptation With Attention for Estimating Threshold Voltage Distributions Under Process Variation

open access: yesIEEE Access
NAND flash memory is a type of non-volatile memory that provides high-density storage capacity with fast read and write operations. However, increasing storage capacity and density lead to significant data reliability degradation.
Inhyuk Choi   +3 more
doaj   +1 more source

Reliability challenges in 3D NAND Flash memories

open access: yes, 2019
The reliability of 3D NAND Flash memory technology is depending on many factors. Most of them are related to the process-induced variability of the layers. Endurance, data retention capabilities, and cross-temperature immunity are the metrics that become
Cristian Zambelli   +5 more
core   +1 more source

A high-performance body-tied FinFET Bandgap Engineered SONOS (BE-SONOS) for NAND-type flash memory

open access: yes, 2007
[[abstract]]A body-tied FinFET bandgap engineered (BE)-silicon-oxide-nitride-oxide-silicon (SONOS) NAND Flash device is successfully demonstrated for the first time.
Lue,Hang Ting   +7 more
core   +1 more source

COTS 3D NAND Flash: SEE Test Results and Challenges [PDF]

open access: yes, 2018
Heavy-ion test data for 3D NAND flash memories is presented, along with a discussion of modern testing challenges and near-term plans for a broad survey of currently-available product ...
Campola, Michael   +2 more
core  

Design and realization of NAND flash based on embedded Linux system

open access: yes, 2011
This paper utilizes ARM 9 series chips such as S3C2440 as the CPU to realize an embedded Linux system. Due to the integration of NAND Flash in S3C2440, it is easy to connect the NAND Flash external devices in the perspective of hardware.
Run Yang Zhong   +7 more
core   +1 more source

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