Estimation method for bit upset ratio of NAND flash memory induced by heavy ion irradiation
In order to estimate the bit upset ratio of NAND flash memory induced by heavy ion irradiation, starting from the physical mechanism of the bit upset of NAND flash memory, an analytical model based on statistical methods was developed to describe the ...
Jiangkun Sheng +9 more
doaj +1 more source
Investigation of Program Efficiency Overshoot in 3D Vertical Channel NAND Flash with Randomly Distributed Traps. [PDF]
Park C +5 more
europepmc +1 more source
Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors. [PDF]
Fan H +6 more
europepmc +1 more source
Random Telegraph Noise in 3D NAND Flash Memories. [PDF]
Spinelli AS +3 more
europepmc +1 more source
Activation Enhancement and Grain Size Improvement for Poly-Si Channel Vertical Transistor by Laser Thermal Annealing in 3D NAND Flash. [PDF]
Yang T +8 more
europepmc +1 more source
A Scalable Bidimensional Randomization Scheme for TLC 3D NAND Flash Memories. [PDF]
Favalli M +4 more
europepmc +1 more source
In questa tesi verranno trattate le memorie Flash. Partendo da una breve introduzione all'argomento, si studierà prima il funzionamento a livello fisico del transistor, il suo inserimento in un'architettura a NAND e i metodi di accesso e scrittura del dati in tale contesto.
openaire +1 more source
High-density, commercial, nonvolatile flash memories with NAND architecture are now available from several manufacturers. This report examines SEE effects and TID response in single-level cell (SLC) and multi-level cell (MLC) NAND flash memories ...
Nguyen, Duc N., Irom, Farokh
core
Physical Unclonable Function Based on 3D-NAND Flash Array Structure With Multi-Chip Implementation. [PDF]
Hwang H, Youn S, Park J, Yu D, Kim H.
europepmc +1 more source
Residual stress modulation as a pathway to reliable multilevel 3D NAND flash storage. [PDF]
Zhou R, Kim IJ, Park S, Kwon H, Lee JS.
europepmc +1 more source

