Estimation method for bit upset ratio of NAND flash memory induced by heavy ion irradiation
AIP AdvancesIn order to estimate the bit upset ratio of NAND flash memory induced by heavy ion irradiation, starting from the physical mechanism of the bit upset of NAND flash memory, an analytical model based on statistical methods was developed to describe the ...
Jiangkun Sheng +9 more
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Investigation of Program Efficiency Overshoot in 3D Vertical Channel NAND Flash with Randomly Distributed Traps. [PDF]
Nanomaterials (Basel), 2023 Park C +5 more
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IEEE Journal of the Electron Devices SocietyRandom telegraph noise (RTN) shifts the threshold voltage (Vt) of 3D NAND flash memory cells, making it a key factor of the device malfunction. The aim of this study is to predict the distribution of RTN induced ${\mathrm { V}}_{\mathrm { t}}$ shift in
Eunseok Oh, Hyungcheol Shin
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Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors. [PDF]
Sensors (Basel), 2023 Fan H +6 more
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REVIEW ON DEVELOPMENTS IN NAND FLASH PAGE REPLACEMENT ALGORITHMS [PDF]
, 2020 Hitha Paulson, Rajesh R Dr.
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Activation Enhancement and Grain Size Improvement for Poly-Si Channel Vertical Transistor by Laser Thermal Annealing in 3D NAND Flash. [PDF]
Micromachines (Basel), 2023 Yang T +8 more
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Disturbance Minimization by Stress Reduction During Erase Verify for NAND Flash Memory [PDF]
, 2016 Juwan Seo, Min Choi
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A Scalable Bidimensional Randomization Scheme for TLC 3D NAND Flash Memories. [PDF]
Micromachines (Basel), 2021 Favalli M +4 more
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An Asymmetry Matrix Transposition Scheme based on NAND Flash Memory [PDF]
, 2015 Sungchul Kim +4 more
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