Results 111 to 120 of about 930 (165)
Some of the next articles are maybe not open access.
Reviewing the Evolution of the NAND Flash Technology
Proceedings of the IEEE, 2017This paper reviews the recent historical trends of the NAND Flash technology, highlighting the evolution of its main parameters and explaining what allowed it to become not only the most important integrated solution for nonvolatile storage of high volumes of data but also a strong rival eroding the market share of hard-disk drives.
MONZIO COMPAGNONI, CHRISTIAN +5 more
openaire +3 more sources
2012
A Solid-State-Disk is made up by a Flash controller plus a bunch of NAND Flash devices. This chapter focuses on design aspects of NAND chips. The information stored in each memory cell is fully analog because it is related to the number of electrons stored in the floating gate.
Luca Crippa, Rino Micheloni
openaire +1 more source
A Solid-State-Disk is made up by a Flash controller plus a bunch of NAND Flash devices. This chapter focuses on design aspects of NAND chips. The information stored in each memory cell is fully analog because it is related to the number of electrons stored in the floating gate.
Luca Crippa, Rino Micheloni
openaire +1 more source
Endurance limits of MLC NAND flash
2015 IEEE International Conference on Communications (ICC), 2015An extensive effort is being undertaken by the flash community to develop signal processing and error-correction coding schemes that make use of soft information. Using experimental data from a state-of-the-art MLC flash device we demonstrate that the theoretical endurance improvement that such schemes can bring is limited.
Thomas P. Parnell +4 more
openaire +2 more sources
NAND Flash Memory: Challenges and Opportunities
Computer, 2013NAND flash offers a range of compelling benefits that will keep attracting mobile and enterprise application developers as engineers tackle the hard problems of scaling the technology to sub-20 nm.
Yan Li, Khandker Quader
openaire +1 more source
2008
NAND Flash memories are the storage media used inside Solid State Drives (SSDs). Indeed, a single drive for enterprise applications can contain up to hundreds of Flash chips. Flash memories are non-volatile in the sense that they can retain the information even when powered off, but they wear out, i.e.
R. Micheloni, A. Marelli, R. Ravasio
openaire +1 more source
NAND Flash memories are the storage media used inside Solid State Drives (SSDs). Indeed, a single drive for enterprise applications can contain up to hundreds of Flash chips. Flash memories are non-volatile in the sense that they can retain the information even when powered off, but they wear out, i.e.
R. Micheloni, A. Marelli, R. Ravasio
openaire +1 more source
Capacity of the MLC NAND Flash Channel
IEEE Journal on Selected Areas in Communications, 2016In this paper, we develop a framework for evaluating the symmetric capacity of multilevel-cell (MLC) NAND flash devices while making very few assumptions regarding the underlying device physics. A set of recursive equations are derived that allow one to measure the symmetric capacity for any given page in a flash device using simple conditional ...
Thomas P. Parnell +3 more
openaire +1 more source
IEEE Solid-State Circuits Magazine, 2013
Recent progress in mobile equipments (ex. smartphone and tablet-PC) requires further effort in developing higher density and higher reliability nonvolatile semiconductor memories. A breakthrough in the field of nonvolatile memories was the invention of the Flash memory by Prof. Fujio Masuoka [1].
openaire +1 more source
Recent progress in mobile equipments (ex. smartphone and tablet-PC) requires further effort in developing higher density and higher reliability nonvolatile semiconductor memories. A breakthrough in the field of nonvolatile memories was the invention of the Flash memory by Prof. Fujio Masuoka [1].
openaire +1 more source
Radiation effects on NAND Flash memories
2010Electronic chips operating at sea level are constantly bombarded by a shower of high-energy neutrons, which originate from the interactions of cosmic rays with the outer layers of the atmosphere. The neutron flux changes with altitude, reaching a peak very close to the cruise altitude of airplanes, posing an even more serious threat to avionics.
BAGATIN, MARTA +3 more
openaire +2 more sources
2018 IEEE International Electron Devices Meeting (IEDM), 2018
As the 2D NAND Flash scaling plateaued due to physical and electrical scaling limitations, 3D NAND emerged as a strong successor to continue the scaling trend. 3D NAND has rapidly achieved maturity and is already in the 3rd and 4th generation of technology with the total number of layers reaching 96 active layers.
K. Parat, A. Goda
openaire +1 more source
As the 2D NAND Flash scaling plateaued due to physical and electrical scaling limitations, 3D NAND emerged as a strong successor to continue the scaling trend. 3D NAND has rapidly achieved maturity and is already in the 3rd and 4th generation of technology with the total number of layers reaching 96 active layers.
K. Parat, A. Goda
openaire +1 more source
2012
This chapter describes the basic operating principle and presents the major reliability and scaling limitations of floating gate NAND non-volatile memory as used in SSD applications. It further discusses charge trapping memory cells as a potential replacement for floating gate cells in the NAND array and evaluates the potential of both memory cell ...
openaire +1 more source
This chapter describes the basic operating principle and presents the major reliability and scaling limitations of floating gate NAND non-volatile memory as used in SSD applications. It further discusses charge trapping memory cells as a potential replacement for floating gate cells in the NAND array and evaluates the potential of both memory cell ...
openaire +1 more source