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Spread programming for NAND flash

2015 IEEE International Conference on Communications (ICC), 2015
The aggressive scaling of NAND flash memories has caused significant degradation in their reliability and endurance. One of the dominant factors in this degradation is the inter-cell-interference (ICI), by which the programming of a cell can affect near-by neighboring cells corrupting the information that they store.
Tianqiong Luo, Borja Peleato
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Underpowering NAND flash

Proceedings of the 50th Annual Design Automation Conference, 2013
MLC Flash memory is getting more popular in computer systems ranging from sensor networks and embedded systems to large-scale server systems. However, MLC flash has many reliability concerns, including the potential for corruption due to supply voltage fluctuations.
Hung-Wei Tseng 0001   +2 more
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Reviewing the Evolution of the NAND Flash Technology

Proceedings of the IEEE, 2017
This paper reviews the recent historical trends of the NAND Flash technology, highlighting the evolution of its main parameters and explaining what allowed it to become not only the most important integrated solution for nonvolatile storage of high volumes of data but also a strong rival eroding the market share of hard-disk drives.
MONZIO COMPAGNONI, CHRISTIAN   +5 more
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Endurance limits of MLC NAND flash

2015 IEEE International Conference on Communications (ICC), 2015
An extensive effort is being undertaken by the flash community to develop signal processing and error-correction coding schemes that make use of soft information. Using experimental data from a state-of-the-art MLC flash device we demonstrate that the theoretical endurance improvement that such schemes can bring is limited.
Thomas P. Parnell   +4 more
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NAND Flash Memory: Challenges and Opportunities

Computer, 2013
NAND flash offers a range of compelling benefits that will keep attracting mobile and enterprise application developers as engineers tackle the hard problems of scaling the technology to sub-20 nm.
Yan Li, Khandker Quader
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NAND Flash Design

2012
A Solid-State-Disk is made up by a Flash controller plus a bunch of NAND Flash devices. This chapter focuses on design aspects of NAND chips. The information stored in each memory cell is fully analog because it is related to the number of electrons stored in the floating gate.
Luca Crippa, Rino Micheloni
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Capacity of the MLC NAND Flash Channel

IEEE Journal on Selected Areas in Communications, 2016
In this paper, we develop a framework for evaluating the symmetric capacity of multilevel-cell (MLC) NAND flash devices while making very few assumptions regarding the underlying device physics. A set of recursive equations are derived that allow one to measure the symmetric capacity for any given page in a flash device using simple conditional ...
Thomas P. Parnell   +3 more
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Telomere: Real-Time NAND Flash Storage

ACM Transactions on Embedded Computing Systems, 2022
Modern solid-state disks achieve high data transfer rates due to their massive internal parallelism. However, out-of-place updates for flash memory incur garbage collection costs when valid data needs to be copied during space reclamation.
Katherine Missimer   +2 more
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NAND Flash memories

2008
NAND Flash memories are the storage media used inside Solid State Drives (SSDs). Indeed, a single drive for enterprise applications can contain up to hundreds of Flash chips. Flash memories are non-volatile in the sense that they can retain the information even when powered off, but they wear out, i.e.
R. Micheloni, A. Marelli, R. Ravasio
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NAND Flash Innovations

IEEE Solid-State Circuits Magazine, 2013
Recent progress in mobile equipments (ex. smartphone and tablet-PC) requires further effort in developing higher density and higher reliability nonvolatile semiconductor memories. A breakthrough in the field of nonvolatile memories was the invention of the Flash memory by Prof. Fujio Masuoka [1].
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