Results 101 to 110 of about 930 (165)

A Novel Channel Preparation Scheme to Optimize Program Disturbance in Three-Dimensional NAND Flash Memory. [PDF]

Micromachines (Basel)
You K, Jin L, Jia J, Huo Z.
europepmc   +1 more source

Design of Low-Latency Layered Normalized Minimum Sum Low-Density Parity-Check Decoding Based on Entropy Feature for NAND Flash-Memory Channel. [PDF]

Entropy (Basel)
Li Y, Hu H.
europepmc   +1 more source

A Flexible Hybrid BCH Decoder for Modern NAND Flash Memories Using General Purpose Graphical Processing Units (GPGPUs). [PDF]

Micromachines (Basel), 2019
Subbiah A, Ogunfunmi T.
europepmc   +1 more source

ReHypar: a recursive hybrid chunk partitioning method using NAND-flash memory SSD. [PDF]

ScientificWorldJournal, 2014
No J, Park SS, Lim CS.
europepmc   +1 more source

Capacitive in-memory vector-matrix multiplication computing with charge-trap memcapacitors. [PDF]

Nano Converg
Yu J, Hwang H, Kim H, Choi WY.
europepmc   +1 more source

Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack. [PDF]

Nano Lett
Fernandes L, Wodzro S, Venkatesan P, Ravikumar P, Lee MY, Shon M, Chakraborty D, Song T, Kang S, Soliman S, Tian M, Yeager J, Adler J, Chen J, Wang Z, Wolfe D, Yu S, Padovani A, Datta S, Ray B, Khan A.   +20 more
europepmc   +1 more source

TiO₂ nanolayer-assisted top-interface engineering for disturbance-free FeFETs: a blueprint for future van der Waals memory. [PDF]

Nano Converg
Kang H, Kwak J, Kim G, Lee S, Kim Y, Park S, Lim S, Seo K, Kim W, Ha D, Ahn J, Jeon S.   +11 more
europepmc   +1 more source

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A strategy to emulate NOR flash with NAND flash

ACM Transactions on Storage, 2010
This work is motivated by a strong market demand for the replacement of NOR flash memory with NAND flash memory to cut down the cost of many embedded-system designs, such as mobile phones. Different from LRU-related caching or buffering studies, we are interested in prediction-based prefetching based on given execution traces of application executions.
Yuan-Hao Chang, Jen-Wei Hsieh, Tei-Wei Kuo   +2 more
exaly   +3 more sources

Underpowering NAND flash

Proceedings of the 50th Annual Design Automation Conference, 2013
MLC Flash memory is getting more popular in computer systems ranging from sensor networks and embedded systems to large-scale server systems. However, MLC flash has many reliability concerns, including the potential for corruption due to supply voltage fluctuations.
Hung-Wei Tseng 0001, Laura M. Grupp, Steven Swanson   +2 more
openaire   +2 more sources

Spread programming for NAND flash

2015 IEEE International Conference on Communications (ICC), 2015
The aggressive scaling of NAND flash memories has caused significant degradation in their reliability and endurance. One of the dominant factors in this degradation is the inter-cell-interference (ICI), by which the programming of a cell can affect near-by neighboring cells corrupting the information that they store.
Tianqiong Luo, Borja Peleato
openaire   +2 more sources