Results 31 to 40 of about 930 (165)
Forensics and Anti-Forensics of a NAND Flash Memory: From a Copy-Back Program Perspective
IEEE Access, 2021 This paper proposes a safe copy-back program operation in a NAND flash memory, which is targeting digital forensics for a variety of reasons. Due to the background management operation of the NAND flash memory, the original data is highly likely to ...
Na Young Ahn, Dong Hoon Lee
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System-Technology Codesign of 3-D NAND Flash-Based Compute-in-Memory Inference Engine
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2021 Due to its ultrahigh density and commercially matured fabrication technology, 3-D NAND flash memory has been proposed as an attractive candidate of inference engine for deep neural network (DNN) workloads.
Wonbo Shim, Shimeng Yu
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Light-Absorbing-Layer-Free Flash Lamp Annealing for High-Throughput Fabrication of All-Solution-Processed Oxide Electronics. [PDF]
Adv Sci (Weinh)A flash lamp annealing strategy using a mullite chuck enables rapid conversion of sol–gels to metal oxides on silicon and ultra‐thin glass without extra light‐absorbing layers. Direct light absorption initiates the transformation, and the low thermal conductivity of mullite promotes heat accumulation.
Li Z +5 more
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On the capacity of multilevel NAND flash memory channels [PDF]
2016 IEEE International Symposium on Information Theory (ISIT), 2016 In this paper, we initiate a first information-theoretic study on multilevel NAND flash memory channels with intercell interference. More specifically, for a multilevel NAND flash memory channel under mild assumptions, we first prove that such a channel is indecomposable and it features asymptotic equipartition property; we then further prove that ...
Han, G, Kavcic, A, Li, Y
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Adaptive Read Thresholds for NAND Flash [PDF]
IEEE Transactions on Communications, 2015 A primary source of increased read time on NAND flash comes from the fact that in the presence of noise, the flash medium must be read several times using different read threshold voltages for the decoder to succeed. This paper proposes an algorithm that uses a limited number of re-reads to characterize the noise distribution and recover the stored ...
Borja Peleato +4 more
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Hydrogen Source and Diffusion Path for Poly-Si Channel Passivation in Xtacking 3D NAND Flash Memory
IEEE Journal of the Electron Devices Society, 2020 Poly-Si channels need well passivated by using hydrogen passivation process in 3D NAND flash memories for better poly-Si quality with low trap density.
Xinshuai Shen +7 more
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IEEE Journal of the Electron Devices Society, 2023 The emergence of data-driven technologies including Internet of Things (IoT), artificial intelligence (AI), and cloud computing has led to a surge in data generation and mining.
Amit Kumar, Shubham Sahay
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Bit upset and performance degradation of NAND flash memory induced by total ionizing dose effects
AIP Advances, 2023 In order to develop the shift model of threshold voltage distribution of the memory array in a radiation environment based on the bit upset test results of NAND Flash and study the coupling effect caused by the simultaneous performance degradation of ...
Jiangkun Sheng +8 more
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Memories - Materials, Devices, Circuits and Systems, 2023 In this paper, we propose a gate-all-around with back-gate (GAAB) 3D NAND flash memory structure for high performance and reliability. First, in the selected string, we confirmed that the proposed structure can improve program performance using negative ...
Jae-Min Sim +6 more
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Schemes for Privacy Data Destruction in a NAND Flash Memory
IEEE Access, 2019 We propose schemes for efficiently destroying privacy data in a NAND flash memory. Generally, even if privacy data is erased from NAND flash memories, there is a high probability that the data will remain in an invalid block. This is a management problem
Na-Young Ahn, Dong Hoon Lee
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