Results 31 to 40 of about 878 (167)
System-Technology Codesign of 3-D NAND Flash-Based Compute-in-Memory Inference Engine
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2021 Due to its ultrahigh density and commercially matured fabrication technology, 3-D NAND flash memory has been proposed as an attractive candidate of inference engine for deep neural network (DNN) workloads.
Wonbo Shim, Shimeng Yu
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IEEE Journal of the Electron Devices Society, 2019 We propose a designing of multi-layer neural networks using 2D NAND flash memory cell as a high-density and reliable synaptic device. Our operation scheme eliminates the waste of NAND flash cells and allows analogue input values.
Sung-Tae Lee +6 more
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Forensics and Anti-Forensics of a NAND Flash Memory: From a Copy-Back Program Perspective
IEEE Access, 2021 This paper proposes a safe copy-back program operation in a NAND flash memory, which is targeting digital forensics for a variety of reasons. Due to the background management operation of the NAND flash memory, the original data is highly likely to ...
Na Young Ahn, Dong Hoon Lee
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IEEE Journal of the Electron Devices Society, 2023 The emergence of data-driven technologies including Internet of Things (IoT), artificial intelligence (AI), and cloud computing has led to a surge in data generation and mining.
Amit Kumar, Shubham Sahay
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Hydrogen Source and Diffusion Path for Poly-Si Channel Passivation in Xtacking 3D NAND Flash Memory
IEEE Journal of the Electron Devices Society, 2020 Poly-Si channels need well passivated by using hydrogen passivation process in 3D NAND flash memories for better poly-Si quality with low trap density.
Xinshuai Shen +7 more
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Memories - Materials, Devices, Circuits and Systems, 2023 In this paper, we propose a gate-all-around with back-gate (GAAB) 3D NAND flash memory structure for high performance and reliability. First, in the selected string, we confirmed that the proposed structure can improve program performance using negative ...
Jae-Min Sim +6 more
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Bit upset and performance degradation of NAND flash memory induced by total ionizing dose effects
AIP Advances, 2023 In order to develop the shift model of threshold voltage distribution of the memory array in a radiation environment based on the bit upset test results of NAND Flash and study the coupling effect caused by the simultaneous performance degradation of ...
Jiangkun Sheng +8 more
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Schemes for Privacy Data Destruction in a NAND Flash Memory
IEEE Access, 2019 We propose schemes for efficiently destroying privacy data in a NAND flash memory. Generally, even if privacy data is erased from NAND flash memories, there is a high probability that the data will remain in an invalid block. This is a management problem
Na-Young Ahn, Dong Hoon Lee
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EngIn order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAND ...
Beomjun Kim +2 more
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A Novel Program Suspend Scheme for Improving the Reliability of 3D NAND Flash Memory
IEEE Journal of the Electron Devices Society, 2022 Experimental results indicate that the conventional program suspend scheme in 3D NAND flash memory chip can generate unexpected additional read fail bits and reduce the reliability of 3D NAND flash memory. These extra read fail bits are observed when the
Zhichao Du +11 more
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