Results 21 to 30 of about 930 (165)

Physical Unclonable Function Based on 3D-NAND Flash Array Structure With Multi-Chip Implementation. [PDF]

open access: yesSmall
Physical unclonable function (PUF) based on a 3D‐NAND flash array is proposed, featuring a multi‐chip structure and a massive challenge–response pair (CRP) capacity. The presented utilizes intrinsic string current variations experimentally verified across eight fabricated 48 × 24 NAND flash arrays.
Hwang H, Youn S, Park J, Yu D, Kim H.
europepmc   +2 more sources

Key Technology Practice of High-Speed Access and Research on the Temperature Dependence of Key Time Parameters Based on NAND Flash Memory

open access: yesIEEE Access, 2021
This paper focuses on the NAND flash memory as a data storage medium in the Internet of things data acquisition system, which plays an important role from beginning to end.
Zhuo Hou   +3 more
doaj   +1 more source

Modeling of 3D NAND Characteristics for Cross‐Temperature by Using Graph Neural Network and Its Application

open access: yesAdvanced Intelligent Systems, 2023
Herein, the impact of cross‐temperature on 3D NAND flash memory is modeled by considering adjacent cells using machine learning. The cells comprising NAND flash memory exhibit diverse states and connectivity patterns.
Kyeongrae Cho   +8 more
doaj   +1 more source

Analysis of Residual Stresses Induced in the Confined 3D NAND Flash Memory Structure for Process Optimization

open access: yesIEEE Journal of the Electron Devices Society, 2022
In flash memory technology, mechanical stress is considered as one of the major factors that can influence the device performance. Furthermore, mechanical stress can have a greater impact on the electrical performance in 3D NAND than in 2D NAND because ...
Eun-Kyeong Jang   +4 more
doaj   +1 more source

Improvement of memory performance of 3-D NAND flash memory with retrograde channel doping

open access: yesMemories - Materials, Devices, Circuits and Systems, 2023
The examination of the effect of retrograde channel doping on reliability and performance of 3-D junction-free NAND based flash memory is done for this paper.
Deepika Gupta   +3 more
doaj   +1 more source

Utilization of Unsigned Inputs for NAND Flash-Based Parallel and High-Density Synaptic Architecture in Binary Neural Networks

open access: yesIEEE Journal of the Electron Devices Society, 2021
A novel design method using unsigned input is proposed for a high-density and parallel synaptic string architecture capable of bit-wise operation and bit-counting utilizing NAND flash memory.
Sung-Tae Lee   +6 more
doaj   +1 more source

Analytical Modeling of 3D NAND Flash Cell With a Gaussian Doping Profile

open access: yesIEEE Access, 2022
The incessantly increasing demand for highly dense storage medium in this era of big-data has led to the development of 3D NAND Flash memories. 3D NAND Flash based SSDs have revolutionized edge storage and become an integral part of the data warehouses ...
Amit Kumar, Raushan Kumar, Shubham Sahay
doaj   +1 more source

Efficient Design of Read Voltages and LDPC Codes in NAND Flash Memory Using Density Evolution

open access: yesIEEE Access, 2023
Low-density parity-check (LDPC) codes play an important role in the reliability enhancement of commercial NAND flash memory. Unfortunately, due to the requirement of the reading speed of NAND flash memory, the LDPC decoder will not obtain precise soft ...
Chatuporn Duangthong   +2 more
doaj   +1 more source

A Cache Policy Based on Request Association Analysis for Reliable NAND-Based Storage Systems

open access: yesApplied Sciences, 2021
Compared with the traditional hard-disk drives (HDDs), solid-state drives (SSDs) have adopted NAND flash memory and become the current popular storage devices.
Chi-Hsiu Su, Chin-Hsien Wu
doaj   +1 more source

Operation Scheme of Multi-Layer Neural Networks Using NAND Flash Memory as High-Density Synaptic Devices

open access: yesIEEE Journal of the Electron Devices Society, 2019
We propose a designing of multi-layer neural networks using 2D NAND flash memory cell as a high-density and reliable synaptic device. Our operation scheme eliminates the waste of NAND flash cells and allows analogue input values.
Sung-Tae Lee   +6 more
doaj   +1 more source

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