Compression-Assisted Adaptive ECC and RAID Scattering for NAND Flash Storage Devices [PDF]
Sensors, 2020 NAND flash memory-based storage devices are vulnerable to errors induced by NAND flash memory cells. Error-correction codes (ECCs) are integrated into the flash memory controller to correct errors in flash memory. However, since ECCs show inherent limits
Seung-Ho Lim, Ki-Woong Park
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Asymmetric Programming: A Highly Reliable Metadata Allocation Strategy for MLC NAND Flash Memory-Based Sensor Systems [PDF]
Sensors, 2014 While the NAND flash memory is widely used as the storage medium in modern sensor systems, the aggressive shrinking of process geometry and an increase in the number of bits stored in each memory cell will inevitably degrade the reliability of NAND flash
Min Huang, Zhaoqing Liu, Liyan Qiao
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Investigation of Erase Cycling Induced Joint Dummy Cell Disturbance in Dual-Deck 3D NAND Flash Memory. [PDF]
Micromachines (Basel), 2023 You K, Jin L, Jia J, Huo Z.
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Effects of Poly-Si Grain Boundary on Retention Characteristics under Cross-Temperature Conditions in 3-D NAND Flash Memory. [PDF]
Micromachines (Basel), 2023 An U +6 more
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Modeling nand Flash Memories for IC Design
IEEE Electron Device Letters, 2008 In this letter, we present a compact model of NAND flash memory strings for circuit simulation purposes. This model is modular and easy to be implemented, and its parameters can be extracted through a simple procedure. It allows accurate simulation of NAND flash memories with a limited computational effort, taking into account capacitive coupling ...
LARCHER, Luca +6 more
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ReHypar: a recursive hybrid chunk partitioning method using NAND-flash memory SSD. [PDF]
ScientificWorldJournal, 2014 No J, Park SS, Lim CS.
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Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory
Advanced Electronic Materials, EarlyView.For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, S.H. Shin, Ickhyun Song
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Memcapacitor Crossbar Array with Charge Trap NAND Flash Structure for Neuromorphic Computing. [PDF]
Adv Sci (Weinh), 2023 Hwang S, Yu J, Song MS, Hwang H, Kim H.
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Improvement of memory performance of 3-D NAND flash memory with retrograde channel doping
Memories - Materials, Devices, Circuits and Systems, 2023 The examination of the effect of retrograde channel doping on reliability and performance of 3-D junction-free NAND based flash memory is done for this paper.
Deepika Gupta +3 more
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Advanced Intelligent Systems, 2023 Herein, the impact of cross‐temperature on 3D NAND flash memory is modeled by considering adjacent cells using machine learning. The cells comprising NAND flash memory exhibit diverse states and connectivity patterns.
Kyeongrae Cho +8 more
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