Self-Adaption of the GIDL Erase Promotes Stacking More Layers in 3D NAND Flash [PDF]
Micromachines, 2023 The bit density is generally increased by stacking more layers in 3D NAND Flash. Gate-induced drain leakage (GIDL) erase is a critical enabler in the future development of 3D NAND Flash.
Tao Yang +4 more
doaj +2 more sources
Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices
Computers, 2017 We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field.
Alessandro S Spinelli +2 more
exaly +3 more sources
Architectural and Integration Options for 3D NAND Flash Memories
Computers, 2017 Nowadays, NAND Flash technology is everywhere, since it is the core of the code and data storage in mobile and embedded applications; moreover, its market share is exploding with Solid-State-Drives (SSDs), which are replacing Hard Disk Drives (HDDs) in ...
Rino Micheloni +2 more
exaly +3 more sources
3D NAND Flash Based on Planar Cells
Computers, 2017 In this article, the transition from 2D NAND to 3D NAND is first addressed, and the various 3D NAND architectures are compared. The article carries out a comparison of 3D NAND architectures that are based on a “punch-and-plug” process—with gate-all ...
Andrea Silvagni
exaly +3 more sources
Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability [PDF]
MicromachinesThree-dimensional charge-trapping (CT) NAND flash memory has attracted extensive attention owing to its unique merits, including huge storage capacities, large memory densities, and low bit cost.
Xuesong Zheng +6 more
doaj +2 more sources
Neuromorphic Computing Using NAND Flash Memory Architecture With Pulse Width Modulation Scheme [PDF]
Frontiers in Neuroscience, 2020 A novel operation scheme is proposed for high-density and highly robust neuromorphic computing based on NAND flash memory architecture. Analog input is represented with time-encoded input pulse by pulse width modulation (PWM) circuit, and 4-bit synaptic ...
Sung-Tae Lee, Jong-Ho Lee
doaj +2 more sources
Bilayer LDPC Codes Combined with Perturbed Decoding for MLC NAND Flash Memory [PDF]
EntropyThis paper presents a coding scheme based on bilayer low-density parity-check (LDPC) codes for multi-level cell (MLC) NAND flash memory. The main feature of the proposed scheme is that it exploits the asymmetric properties of an MLC flash channel and ...
Lingjun Kong +3 more
doaj +2 more sources
Compression-Assisted Adaptive ECC and RAID Scattering for NAND Flash Storage Devices [PDF]
Sensors, 2020 NAND flash memory-based storage devices are vulnerable to errors induced by NAND flash memory cells. Error-correction codes (ECCs) are integrated into the flash memory controller to correct errors in flash memory. However, since ECCs show inherent limits
Seung-Ho Lim, Ki-Woong Park
doaj +2 more sources
Asymmetric Programming: A Highly Reliable Metadata Allocation Strategy for MLC NAND Flash Memory-Based Sensor Systems [PDF]
Sensors, 2014 While the NAND flash memory is widely used as the storage medium in modern sensor systems, the aggressive shrinking of process geometry and an increase in the number of bits stored in each memory cell will inevitably degrade the reliability of NAND flash
Min Huang, Zhaoqing Liu, Liyan Qiao
doaj +2 more sources
Model-Inversion-Resistant Physical Unclonable Neural Network Using Vertical NAND Flash Memory. [PDF]
Adv Sci (Weinh)Schematic and key features of the proposed forward‐forward physical unclonable neural network (FF‐PUNN), incorporating a concealable physical unclonable function (PUF) layer and forward‐forward (FF) learning. ABSTRACT The growing use of neural networks in privacy‐sensitive applications necessitates architectures that inherently protect both data and ...
Park SH +8 more
europepmc +2 more sources