3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage [PDF]
Nanomaterials, 2022 As a strong candidate for computing in memory, 3D NAND flash memory has attracted great attention due to the high computing efficiency, which outperforms the conventional von-Neumann architecture. To ensure 3D NAND flash memory is truly integrated in the
Xinyue Yu +6 more
doaj +2 more sources
Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices
Computers, 2017 We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field.
Christian Monzio Compagnoni +2 more
exaly +3 more sources
3D NAND Flash Based on Planar Cells
Computers, 2017 In this article, the transition from 2D NAND to 3D NAND is first addressed, and the various 3D NAND architectures are compared. The article carries out a comparison of 3D NAND architectures that are based on a “punch-and-plug” process—with gate-all ...
Andrea Silvagni
exaly +3 more sources
Architectural and Integration Options for 3D NAND Flash Memories
Computers, 2017 Nowadays, NAND Flash technology is everywhere, since it is the core of the code and data storage in mobile and embedded applications; moreover, its market share is exploding with Solid-State-Drives (SSDs), which are replacing Hard Disk Drives (HDDs) in ...
Cristian Zambelli +2 more
exaly +3 more sources
Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability [PDF]
MicromachinesThree-dimensional charge-trapping (CT) NAND flash memory has attracted extensive attention owing to its unique merits, including huge storage capacities, large memory densities, and low bit cost.
Xuesong Zheng +6 more
doaj +2 more sources
Bilayer LDPC Codes Combined with Perturbed Decoding for MLC NAND Flash Memory [PDF]
EntropyThis paper presents a coding scheme based on bilayer low-density parity-check (LDPC) codes for multi-level cell (MLC) NAND flash memory. The main feature of the proposed scheme is that it exploits the asymmetric properties of an MLC flash channel and ...
Lingjun Kong +3 more
doaj +2 more sources
Neuromorphic Computing Using NAND Flash Memory Architecture With Pulse Width Modulation Scheme [PDF]
Frontiers in Neuroscience, 2020 A novel operation scheme is proposed for high-density and highly robust neuromorphic computing based on NAND flash memory architecture. Analog input is represented with time-encoded input pulse by pulse width modulation (PWM) circuit, and 4-bit synaptic ...
Sung-Tae Lee, Jong-Ho Lee
doaj +2 more sources
Light-Absorbing-Layer-Free Flash Lamp Annealing for High-Throughput Fabrication of All-Solution-Processed Oxide Electronics. [PDF]
Adv Sci (Weinh)A flash lamp annealing strategy using a mullite chuck enables rapid conversion of sol–gels to metal oxides on silicon and ultra‐thin glass without extra light‐absorbing layers. Direct light absorption initiates the transformation, and the low thermal conductivity of mullite promotes heat accumulation.
Li Z +5 more
europepmc +2 more sources
Asymmetric Programming: A Highly Reliable Metadata Allocation Strategy for MLC NAND Flash Memory-Based Sensor Systems [PDF]
Sensors, 2014 While the NAND flash memory is widely used as the storage medium in modern sensor systems, the aggressive shrinking of process geometry and an increase in the number of bits stored in each memory cell will inevitably degrade the reliability of NAND flash
Min Huang, Zhaoqing Liu, Liyan Qiao
doaj +2 more sources
NAND Flash Memory Characterization [PDF]
, 2019 The NAND technology has become a popular research area and implementation choice due to its non-volatile flash memory characteristics. There are many engineering challenges when it comes to NAND technology. Some of the limiting factors are reducing the transistor width and increasing read and write performance. The device physics for NAND floating gate
Heer, Tanvir Singh
core +3 more sources