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An efficient NAND flash file system for flash memory storage
IEEE Transactions on Computers, 2006 In this paper, we present an efficient flash file system for flash memory storage. Flash memory, especially NAND flash memory, has become a major method for data storage. Currently, a block level translation interface is required between an existing file system and flash memory chips due to its physical characteristics.
Seung-Ho Lim, Kyu-Ho Park
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Modeling of Threshold Voltage Distribution in 3D NAND Flash Memory
Design, Automation and Test in Europe, 2021 3D NAND flash memory faces unprecedented complicated interference than planar NAND flash memory, resulting in more concern regarding reliability and performance. Stronger error correction code (ECC) and adaptive reading strategies are proposed to improve
Weihua Liu +7 more
semanticscholar +2 more sources
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NAND Flash Memory: Challenges and Opportunities
Computer, 2013NAND flash offers a range of compelling benefits that will keep attracting mobile and enterprise application developers as engineers tackle the hard problems of scaling the technology to sub-20 nm.
Yan Li, Khandker Quader
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Error Generation for 3D NAND Flash Memory
2022 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2022Three-dimension (3D) NAND flash memory is the preferred storage component of solid-state drive (SSD) for its high ratio of capacity and cost. Optimizing the reliability of modern SSD needs to test and collect a large amount of real-world error data from ...
Weihua Liu +4 more
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A Dynamic Huffman Coding Method for Reliable TLC NAND Flash Memory
ACM Transactions on Design Automation of Electronic Systems, 2021With the progress of the manufacturing process, NAND flash memory has evolved from the single-level cell and multi-level cell into the triple-level cell (TLC).
Chin-Hsien Wu, Wuchin-Hsien
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Reliability of NAND Flash Memories
, 2010 The continuous demand for NAND flash memories with higher performance and storage capabilities pushes the manufactures towards the limits of present technologies and to explore new solutions, both from the physical and the architectural point of view. The memory reliability represents one of the major antagonist towards this un-stoppable technological ...
ZAMBELLI, Cristian +2 more
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Trends and Future Challenges of 3D NAND Flash Memory
International Memory Workshop, 2023NAND flash memory industry has made significant progress in the density and technology since the introduction of 3D NAND flash memory. It took only a few years to change the mainstream of the NAND flash memory from 2D NAND to 3D NAND thanks to its ...
S. Shim, J. Jang, J. Song
semanticscholar +1 more source
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
3D ferroelectric NAND (Fe-NAND) Quad-level cell (QLC) operation has been demonstrated for the first time to our knowledge, using the 3D CTN NAND test vehicle for mass production. The 3D Fe-NAND is optimized by engineering the cell stack layers, enlarging
Sunghyun Yoon +8 more
semanticscholar +1 more source
3D ferroelectric NAND (Fe-NAND) Quad-level cell (QLC) operation has been demonstrated for the first time to our knowledge, using the 3D CTN NAND test vehicle for mass production. The 3D Fe-NAND is optimized by engineering the cell stack layers, enlarging
Sunghyun Yoon +8 more
semanticscholar +1 more source