Results 181 to 190 of about 29,727 (252)
Some of the next articles are maybe not open access.
LightWarner: Predicting Failure of 3D NAND Flash Memory Using Reinforcement Learning
IEEE transactions on computers, 2023NAND flash memory has gained popularity in a wide variety of digital storage systems. Although with excellent performance, NAND flash memory suffers various reliability problems.
Yuqian Pan +5 more
semanticscholar +1 more source
Exploiting Metadata to Estimate Read Reference Voltage for 3-D nand Flash Memory
IEEE transactions on consumer electronics, 2023In consumer electronics, 3-D NAND flash memory has become the state-of-the-art storage medium due to the multi-bit storage per cell and 3-D stacking technology. However, flash memory cells are commonly vulnerable to numerous types of circuit-level noise,
Y. Li +5 more
semanticscholar +1 more source
IEEE transactions on device and materials reliability, 2023
Flash memory has gradually become the dominant storage device in the consumer market and data centers since the storage capacity increases and production costs decline.
Hua Feng +5 more
semanticscholar +1 more source
Flash memory has gradually become the dominant storage device in the consumer market and data centers since the storage capacity increases and production costs decline.
Hua Feng +5 more
semanticscholar +1 more source
Decomposition of Vertical and Lateral Charge Loss in Long-term Retention of 3-D NAND Flash Memory
IEEE International Reliability Physics Symposium, 2023For long-term retention characteristics of 3-D NAND flash memory, a method is proposed to decompose the measured $\boldsymbol{V_{T}}$ shift into several charge loss mechanisms, including lateral migration (LM), band-to-trap tunneling (BT), trap-to-band ...
Joung-June Park +7 more
semanticscholar +1 more source
High-Precision Short-Term Lifetime Prediction in TLC 3-D NAND Flash Memory as Hot-Data Storage
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 20233-D NAND flash memory is the ubiquitous nonvolatile memory (NVM) on the market because of its large storage capacities, high reliability, and low bit cost. The reliability characteristics of 3-D NAND flash memory, however, are considerably different from
Xiaotong Fang +8 more
semanticscholar +1 more source
CRRC: Coordinating Retention Errors, Read Disturb Errors and Huffman Coding on TLC NAND Flash Memory
IEEE Transactions on Dependable and Secure Computing, 2023Nowadays, TLC NAND flash memory has become a mainstream storage medium because of its large capacity and low cost. However, TLC NAND flash memory could have the reliability problem (such as the retention errors and the read disturb errors), as the cell ...
Taylor Yu, Chin-Hsien Wu, Yanchu Liao
semanticscholar +1 more source
Process Improvements for 7th Generation 1Tb Quad-Level Cell 3D NAND Flash Memory in Mass Production
International Memory Workshop, 2023Over the past few decades, a greater need for 3D Vertical NAND (V-NAND) flash memory storage capacity has emerged. Compared to its prevailing technical predecessor, a quad-level cell (QLC) NAND flash memory can be a perfect replacement to meet the needs ...
Soochan Chung +11 more
semanticscholar +1 more source
IEEE International Solid-State Circuits Conference, 2022
As data sizes increase exponentially, the demand for higher-density NAND with a smaller cell size and a higher interface speed has also increased [1]–[4].
Moosung Kim +33 more
semanticscholar +1 more source
As data sizes increase exponentially, the demand for higher-density NAND with a smaller cell size and a higher interface speed has also increased [1]–[4].
Moosung Kim +33 more
semanticscholar +1 more source
ACM Transactions on Storage, 2022
Solid-state drive (SSD) gradually dominates in the high-performance storage scenarios. Three-dimension (3D) NAND flash memory owning high-storage capacity is becoming a mainstream storage component of SSD.
Weihua Liu +6 more
semanticscholar +1 more source
Solid-state drive (SSD) gradually dominates in the high-performance storage scenarios. Three-dimension (3D) NAND flash memory owning high-storage capacity is becoming a mainstream storage component of SSD.
Weihua Liu +6 more
semanticscholar +1 more source
Observation of Low-Energy Proton Direct Ionization in a 72-Layer 3-D NAND Flash Memory
IEEE Transactions on Nuclear Science, 2021Single-event upsets are observed in a 72-layer 3-D NAND flash memory operated in a single-level cell mode after low-energy proton (500 keV–1.2 MeV) and heavy-ion irradiation.
E. Wilcox +6 more
semanticscholar +1 more source