Results 171 to 180 of about 5,324 (209)

A study of the states kinetics in NBTI degradation by two-stage NBTI model implementation

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 2015
This paper presents a simulation framework for reliability analysis of PMOS devices in the TCAD Sentaurus environment. The degradation of parameter is based on the numerical solution for the two-stage NBTI model mechanism. We demonstrate and analyze the voltage degradation, Vth of a high-k HfO2 dielectric pMOSFET structure with effective oxide ...
A.F. Muhammad Alimin, S.F. Wan Muhamad Hatta, N. Soin   +2 more
openaire   +1 more source

???????????????????? ???????????? ???????????????????????????????? ?????????????????? Cu-NbTi ?????????? ?????????????????????????????? ???????????????????????? ????????????????????

2014
???????????????????? ???????????????????????? ???????????????????? ???????????????????????? ?????????? (????????) ???? ???????????? ?????????? ?? Cu???NbTi-????????????????????, ?????????????????? ???????????????????????? ???????????????????? ?????????????????????? ?? ?????????????????????????? ?????????????????????????????? ????????????????????????????
openaire   +2 more sources

Modeling and mitigating NBTI in nanoscale circuits

2011 IEEE 17th International On-Line Testing Symposium, 2011
As semiconductor manufacturing has entered into nanoscale era, performance degradation due to Negative Bias Temperature Instability (NBTI) became one of the major threats to circuits reliability. In this paper, we present an NBTI gate delay model and a technique to mitigate its impact on circuit delays.
Seyab Khan, Said Hamdioui
openaire   +1 more source

A comprehensive model of PMOS NBTI degradation

Microelectronics Reliability, 2005
Abstract Negative bias temperature instability has become an important reliability concern for ultra-scaled Silicon IC technology with significant implications for both analog and digital circuit design. In this paper, we construct a comprehensive model for NBTI phenomena within the framework of the standard reaction–diffusion model.
ALAM, MA, MAHAPATRA, S
openaire   +3 more sources

NBTI-aware design of NoC buffers

Proceedings of the 2013 Interconnection Network Architecture: On-Chip, Multi-Chip, 2013
Network-on-Chips (NoC) play a central role in determining performance and reliability in current and future multi-core architectures. Continuous scaling of CMOS technology enable widespread adoption of multi-core architectures but, unfortunately, poses severe concerns regarding failures.
ZONI, DAVIDE, FORNACIARI, WILLIAM
openaire   +3 more sources

NbTi: The Wonderful Workhorse

2022
Abstract This chapter focuses on niobium-titanium, which is often referred to as the workhorse superconductor because it is much simpler and cheaper to make into wires than any other superconducting material. That being said, there is still a great deal of materials engineering that goes into making high performance wires of niobium ...
openaire   +1 more source

Contribution of As-grown Hole Traps to NBTI

ECS Transactions, 2007
The increase in nitrogen concentration in the gate SiON enhances the negative bias temperature instability (NBTI) to such a level that it is limiting the lifetime of pMOSFETs. Despite early efforts, our understanding of it is incomplete. Confusions exist on the relative importance of positive charge in SiON for NBTI. Recently, tree different types
Mo H. Chang, Yangang Wang, Jian F. Zhang, Ce Zhao, Weidong Zhang, Mingzhen Xu   +5 more
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Enthalpy improved dielectric insulation for NbTi

IEEE Transactions on Magnetics, 1983
Two new dielectric insulation systems applicable to NbTi are described. Both systems incorporate significant enthalpy stabilization in that the volumetric specific heats of the dielectrics are equivalent to, or much larger than, that of Pb below 10K. For one of the systems, the thermal conductivity at 5K approaches that of commercial Cu.
W.N. Lawless, C.F. Clark, R. Boom
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NBTI degradation in STI-based LDMOSFETs

Microelectronics Reliability, 2014
Abstract NBTI degradation in STI-based LDMOSFETs has been investigated by multi-region DCIV spectroscopy (MR-DCIV), a non-destructive and sensitive method to probe the interface states on channel, accumulation and STI region. A unified MR-DCIV current model was proposed based on its independency to the forward bias and temperature.
Yandong He, Ganggang Zhang, Xing Zhang 0002   +2 more
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Preparation and Properties of NbTi–Nb3Sn–NbTi Superconducting Joints

Journal of Low Temperature Physics, 2023
Wanshuo Sun, Shunzhong Chen, Junsheng Cheng, Qiuliang Wang   +3 more
openaire   +1 more source