Results 161 to 170 of about 5,324 (209)

??????????????????????????-?????????????????????? ?????????????????? ?????????????????? ???? ???????????? ???????????? NbTi

2014
?????????????????????? ?????????????? ???? ???????????????????????????? ???????????? ?????????????????????????????? (?? ?????????????????????? ?????????????????????????????? ?????????????????????????? ?????????????????????? (??????????)) ?????????????????? ???????????????????? ?????????????????????????? ???????????????????????????? (???? ??????????????)
  +8 more sources

Recovery and universality in NBTI

Microelectronics Reliability, 2014
Abstract The fast recovery behavior in negative bias temperature instability (NBTI) in SiON gate p-type metal–oxide–silicon field effect transistors was investigated. The fast recovery is due to the hole detrapping from the K-center ( N 3 Si , where denotes a dangling bond).
openaire   +1 more source

NBTI-Aware Synthesis of Digital Circuits

2007 44th ACM/IEEE Design Automation Conference, 2007
Negative bias temperature instability (NBTI) in PMOS transistors has become a major reliability concern in nanometer scale design, causing the temporal degradation of the threshold voltage of the PMOS transistors, and the delay of digital circuits. A novel method to characterize the delay of every gate in the standard cell library, as a function of the
Sanjay V. Kumar, Chris H. Kim, Sachin S. Sapatnekar   +2 more
openaire   +2 more sources

NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling

IEEE Transactions on Electron Devices, 2019
S.1662-1668We investigate the NBTI degradation and recovery of pMOSFETs under continuously varying analog-circuit stress voltages, and thereby generalize existing digital-stress NBTI studies.
Tibor Grässer, Hans Reisinger, Katja Puschkarsky   +2 more
exaly   +2 more sources

NBTI - evening discussion

IEEE International Integrated Reliability Workshop Final Report, 2003, 2003
Four topics were discussed: (1) Technology Trends in NBTI: The discussion here centered on how the process technology options can reduce NBTI by optimizing the N,H, and B concentrations at the gate oxide interface. There were some contradicting results which were reported on Deuterium.
S.J. Wen, H. Puchner
openaire   +1 more source

Ultrafast Measurement on NBTI

IEEE Electron Device Letters, 2009
We combine customary pulsed I- V setup with a simple linear drain-current correction method to provide a possible standard for NBTI characterization. The method is implemented using standard equipment and yet is able to achieve sub-100-ns delay, the shortest reported to date for a wafer-level setup.
G.A. Du, D.S. Ang, Z.Q. Teo, Y.Z. Hu
openaire   +1 more source

NBTI and PBTI in HKMG

2013
As the CMOS technology nodes progress aggressively into “nano” era, introduction of High-k Metal gate (HKMG) has became key to maintain the scaling trend. Much effort has been devoted to understand the reliability aspects of HKMG over the last decade.
Kai Zhao, Siddarth Krishnan, Barry Linder, James H. Stathis   +3 more
openaire   +1 more source

NBTI and Concurrent HCI-NBTI Degradation of 65 nm SOI PMOSFETs

2007 IEEE International SOI Conference, 2007
Body contacted (BC) core logic/high speed (HS) and input/output (I/O) SOI PMOSFETs from 65 nm technology are shown to have higher degradation than the counterpart floating body (FB) devices under NBTI stress. It is also observed that concurrent HCI-NBTI (hot-carrier injection-negative bias temperature instability) leads to worst case degradation for ...
Rahul Mishra, Souvick Mitra, Robert Gauthier, Dimitris E. Ioannou   +3 more
openaire   +1 more source

Phase Space Based NBTI Model

2013
A phase space based NBTI model that relies upon the well-known reaction-diffusion model is introduced. Temporal shift in threshold voltage and a new parameter called “healability” are used to characterize the state of the NBTI effect. The NBTI degradation is then simulated as a trace of the interpolated characterization parameters. Thereby, healability
Eilers R., Metzdorf M., Rosinger S., Helms D., Nebel W.   +4 more
openaire   +2 more sources

?????????????? ??????????????????????????-?????????????????????? ?????????????????? ?? ?????????????????????? ?????????????????????????????? ?????????????????????????? ?????????????????????? ???? ?????????????????????????????? ???????????????? ???????????? NbTi

2017
???????????????????? ?????????? ?????????????????????????????? ???????????????????? ?? ???????????????????? ?? ?????????????????????????????? ???? ????????????????????, ?? ?????????? ?????????????????? ?????????????????????????? ???? ?????????????????? ???????????????????? ????????????, ???????? ?????????????? ???? ?????????????????????? ???????????????
Szymczak, R., Pi??toza, J., Pu??niak, R., Szymczak, H., Gajda, D., Zaleski, A.   +5 more
openaire   +1 more source