Results 201 to 210 of about 178,893 (267)

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

Advanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Dong Jae Kim, Cheol Seong Hwang   +4 more
wiley   +1 more source

Polarity-dependent ferroelectric modulations in two-dimensional hybrid perovskite heterojunction transistors. [PDF]

Nat Commun
Li E, He W, Wang R, Zhang C, Zhou H, Liu Y, Yuan Y, Loh KP, Chu J, Li W.   +9 more
europepmc   +1 more source

RRAM Variability Harvesting for CIM‐Integrated TRNG

Advanced Electronic Materials, EarlyView.
This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende, Gokulnath Rajendran, Regina Dittmann, Anupam Chattopadhyay, Vikas Rana   +4 more
wiley   +1 more source

Ferroelectric-based Pockels photonic memory. [PDF]

Nat Commun
Xu Z, Chen CK, Lin HL, Sivan M, Zamburg E, Lee JY, Venkatesan S, Danner A, Thean AV.   +8 more
europepmc   +1 more source

Reversible and Controllable Transition Between Filamentary and Interfacial Resistive Switching in HfO2‐Based Memristors

Advanced Electronic Materials, EarlyView.
5 nm HfO2 memristors exhibit a fully reversible, voltage‐controlled transition between filamentary and interfacial switching within the same device. At high voltages, a filament forms and dominates the conduction, whereas at lower voltages the device reversibly returns to interfacial mode without defect accumulation, implying a new reversible ...
Cuo Wu, Hao Shen, Richard Schroedter, Chong Peng, Hampus Hoffman, Stefan Slesazeck, Ronald Tetzlaff, Thomas Mikolajick, Benjamin Max   +8 more
wiley   +1 more source

Coplanar Floating-Gate Antiferroelectric Transistor with Multifunctionality for All-in-One Analog Reservoir Computing. [PDF]

Nanomicro Lett
Shi Y, Zheng Z, Huo J, Chien YC, Li S, Zheng H, Gong X, Ang KW.   +7 more
europepmc   +1 more source

Reconfigurable, Non‐Volatile Switching in WO3 Film for Resistive Memory and Multistate Programming Toward Energy‐Efficient Neuromorphic Computing Applications

Advanced Electronic Materials, EarlyView.
WO3${\rm WO}_3$ based resistive switching device was precisely controlled and shows the reconfigurable, non‐volatile switching which can be programmable to multi‐resistance states for memory applications. The memory device can also be utilised for low energy neuromorphic application.
Keval Hadiyal, Nagarajan Raghavan, Ramesh Mohan Thamankar   +2 more
wiley   +1 more source

Sustainable memristors from shiitake mycelium for high-frequency bioelectronics. [PDF]

PLoS One
LaRocco J, Tahmina Q, Petreaca R, Simonis J, Hill J.   +4 more
europepmc   +1 more source

Analysis of Magnetic Switching in Magnetically Coupled Dual Free Layers Within Magnetic Tunnel Junctions (MTJ) for STT MRAM

Advanced Electronic Materials, EarlyView.
A magnetic tunnel junction (MTJ) with two free layers shows four magnetization reversal phases governed by interlayer magnetic coupling (Jcpl). Phase 2 (sequential reversal) reduces write current (Iw) by 50% for 30‐nm‐diameter MTJs compared to Phase 4 (coherent reversal), while Jcpl also boosts thermal stability.
Shujun Ye, Koichi Nishioka
wiley   +1 more source

Recent advances in ferroelectric materials, devices, and in-memory computing applications. [PDF]

Nano Converg
Hwang H, Youn S, Kim H.
europepmc   +1 more source