Results 51 to 60 of about 178,893 (267)
TiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices.
Sera Kwon, Min-Jung Kim, Kwun-Bum Chung
doaj +1 more source
Flash drive memory apparatus and method [PDF]
A memory apparatus includes a non-volatile computer memory, a USB mass storage controller connected to the non-volatile computer memory, the USB mass storage controller including a daisy chain component, a male USB interface connected to the USB mass ...
Hinchey, Michael G.
core +1 more source
Fine-Grain Checkpointing with In-Cache-Line Logging
Non-Volatile Memory offers the possibility of implementing high-performance, durable data structures. However, achieving performance comparable to well-designed data structures in non-persistent (transient) memory is difficult, primarily because of the ...
Aksun, David T. +3 more
core +1 more source
Two‐Dimensional Materials as a Multiproperty Sensing Platform
Various sensing modalities enabled and/or enhanced by two‐dimensional (2D) materials are reviewed. The domains considered for sensing include: 1) optoelectronics, 2) quantum defects, 3) scanning probe microscopy, 4) nanomechanics, and 5) bio‐ and chemosensing.
Dipankar Jana +11 more
wiley +1 more source
Overview of Phase-Change Materials Based Photonic Devices
Non-volatile storage memory is widely considered to be one of the most promising candidates to replace dynamic random access memory and even static random access memory.
Jianmin Wang, Lei Wang, Jun Liu
doaj +1 more source
In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang +19 more
wiley +1 more source
NVPE: An FPGA-Based Non-Volatile Processor Emulator for Intermittent Computing
Research on novel memory storage devices that occupy less physical area and are compatible with CMOS processes, such as resistive RAM, has led to the interesting study of non-volatile compute memories and devices.
Idris Somoye, Kevin Yang
doaj +1 more source
Germanium Twin-Transistor Nonvolatile Memory With FinFET Structure
Germanium is a promising alternative material for use in advanced technology nodes because it exhibits symmetrical mobility of holes and electrons.
Siao-Cheng Yan +7 more
doaj +1 more source
Non-Volatile Photonic Memory Based on a SAHAS Configuration
The non-volatile memory is a crucial functionality for a wide range of applications in photonic integrated circuits, however, it still poses a challenge in silicon photonic technology.
Irene Olivares +2 more
doaj +1 more source
It is reported that the ferroelectric switching behavior of rhombohedral (3R) phase transition metal dichalcogenide (TMD) bilayers strongly depends on their domain structures. Single‐domain TMDs (SD‐TMDs) with domain‐wall‐free structures exhibit robust and stable polarization switching, whereas poly‐domain TMDs (PD‐TMDs) with randomly distributed ...
Ji‐Hwan Baek +8 more
wiley +1 more source

