Results 51 to 60 of about 178,893 (267)

Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

open access: yesScientific Reports, 2021
TiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices.
Sera Kwon, Min-Jung Kim, Kwun-Bum Chung
doaj   +1 more source

Flash drive memory apparatus and method [PDF]

open access: yes, 2010
A memory apparatus includes a non-volatile computer memory, a USB mass storage controller connected to the non-volatile computer memory, the USB mass storage controller including a daisy chain component, a male USB interface connected to the USB mass ...
Hinchey, Michael G.
core   +1 more source

Fine-Grain Checkpointing with In-Cache-Line Logging

open access: yes, 2019
Non-Volatile Memory offers the possibility of implementing high-performance, durable data structures. However, achieving performance comparable to well-designed data structures in non-persistent (transient) memory is difficult, primarily because of the ...
Aksun, David T.   +3 more
core   +1 more source

Two‐Dimensional Materials as a Multiproperty Sensing Platform

open access: yesAdvanced Functional Materials, EarlyView.
Various sensing modalities enabled and/or enhanced by two‐dimensional (2D) materials are reviewed. The domains considered for sensing include: 1) optoelectronics, 2) quantum defects, 3) scanning probe microscopy, 4) nanomechanics, and 5) bio‐ and chemosensing.
Dipankar Jana   +11 more
wiley   +1 more source

Overview of Phase-Change Materials Based Photonic Devices

open access: yesIEEE Access, 2020
Non-volatile storage memory is widely considered to be one of the most promising candidates to replace dynamic random access memory and even static random access memory.
Jianmin Wang, Lei Wang, Jun Liu
doaj   +1 more source

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

open access: yesAdvanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang   +19 more
wiley   +1 more source

NVPE: An FPGA-Based Non-Volatile Processor Emulator for Intermittent Computing

open access: yesProceedings
Research on novel memory storage devices that occupy less physical area and are compatible with CMOS processes, such as resistive RAM, has led to the interesting study of non-volatile compute memories and devices.
Idris Somoye, Kevin Yang
doaj   +1 more source

Germanium Twin-Transistor Nonvolatile Memory With FinFET Structure

open access: yesIEEE Journal of the Electron Devices Society, 2020
Germanium is a promising alternative material for use in advanced technology nodes because it exhibits symmetrical mobility of holes and electrons.
Siao-Cheng Yan   +7 more
doaj   +1 more source

Non-Volatile Photonic Memory Based on a SAHAS Configuration

open access: yesIEEE Photonics Journal, 2021
The non-volatile memory is a crucial functionality for a wide range of applications in photonic integrated circuits, however, it still poses a challenge in silicon photonic technology.
Irene Olivares   +2 more
doaj   +1 more source

Domain‐Wall‐Free Sliding Ferroelectricity in Fully Commensurate 3R Transition Metal Dichalcogenide Bilayers

open access: yesAdvanced Functional Materials, EarlyView.
It is reported that the ferroelectric switching behavior of rhombohedral (3R) phase transition metal dichalcogenide (TMD) bilayers strongly depends on their domain structures. Single‐domain TMDs (SD‐TMDs) with domain‐wall‐free structures exhibit robust and stable polarization switching, whereas poly‐domain TMDs (PD‐TMDs) with randomly distributed ...
Ji‐Hwan Baek   +8 more
wiley   +1 more source

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